Self-consistent subband calculation of GaN HEMTs
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Updated
Aug 4, 2020 - Pascal
Self-consistent subband calculation of GaN HEMTs
A project exploring the characteristics of MOSFETs using circuit simulation in NGSPICE. The code simulates various transistor behaviors and models, providing insight into MOSFET switching and amplification properties.
LabTalk Scripts for OFET and EG-OFET analysis
complete quantum mechanical modeling framework and Synopsys Sentaurus TCAD simulation suite for a sub-10 nm 3D Double-Gate Tunnel Field-Effect Transistor (DGTFET)
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