csvVersion.csv

,elements,papername,author,year,state,charge,defect,Ed,title,doi,measurement_technique,defectID,Ed_a,Ed_h,dEd_h,isbn,comments,k,sample.growth,sample.dopant,sample.incorporation,sigma_ha,sigma_ea,dEd_a,e_h,sample.resistivity,measurement_details.Ur,measurement_data.T,measurement_data.e,sigma_h,dsigma_e,sigma_e,measurement_details.T,measurement_details.tp,dEd,dk,measurement_details.single_shot,dsigma_ea,issn,linked,c_e,c_h,e_e,measurement_details.Up,measurement_details.Rw,dsigma_ha,dsigma_h,measurement_details.low_field
896,['Au'],taft1954,taft,1954,['s'],d,Au_s,Ev+0.33,Gold as a Donor in Silicon,10.1103/PhysRev.93.64,Resistivity,Au_sd_taft1954_1954_Ev+0.33,,,,,Doped different samples with different amounts of gold. This is a thermal activation energy.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
895,['Au'],newman1954,newman,1954,['s'],d,Au_s,Ev+0.325,Photoconductivity in Gold-Doped Silicon,10.1103/PhysRev.94.1530,PC-S,Au_sd_newman1954_1954_Ev+0.325,,,,,Same samples as Taft1954. Potentiall saw a level at Ev+0.7.,,,,,,,,,,,,,,,,,,0.005,,,,,,,,,,,,,
781,['B'],fan1956,fan,1956,[''],,B_,Ev+0.046,Infra-red Absorption in Semiconductors,10.1088/0034-4885/19/1/304,"review, infrared absorption",B__fan1956_1956_Ev+0.046,,,,,"Agrees well with thermal values of 0.045 eV. Data showed a broad peak, so the hydrogenic model was used. The integrated absorption cross sections for these excitation bands differ considerably from those for the hydrogenic model.",,,,,,,,,,,,,,,,,,,,,,,B_s_a.srh,,,,,,,,
131,['Al'],fan1956,fan,1956,[''],,Al_,Ev+0.067,Infra-red Absorption in Semiconductors,10.1088/0034-4885/19/1/304,"review, infrared absorption",Al__fan1956_1956_Ev+0.067,,,,,The ionization energy was estimated using the observed excitation band of highest energy. Higher than thermal value of Ev+0.057,,,,,,,,,,,,,,,,,,,,,,,Al_s_a.srh,,,,,,,,
669,['Mn'],carlson1956,carlson,1956,[''],,Mn_,Ec-0.53,Properties of Silicon Doped with Manganese,10.1103/PhysRev.104.937,"Hall, R-T, PC-S",Mn__carlson1956_1956_Ec-0.53,,,,,Shows electron traps.,,CZ,boron,ion implantation,,,,,50-100,,,,,,,,,0.03,,,,,,,,,,,,,
459,['In'],blakemore1956,blakemore,1956,[''],,In_,None,Photoconductivity in Indium-Doped Silicon,,PC-S,In__blakemore1956_1956_None,,,,,"Points to the strange temperature coefficient. Maybe be due to a) iononisation of defects, b) recombination through higher excited Indium states and this would not be detected by PC.",,,,,,,,,,,,,1e-13*exp(0.055/kT),,,"77.5K, 90K, 90K",,,,,,,In_s_a.srh,,,,,,,,
187,['Ga'],fan1956,fan,1956,[''],,Ga_,Ev+0.071,Infra-red Absorption in Semiconductors,10.1088/0034-4885/19/1/304,"review, infrared absorption",Ga__fan1956_1956_Ev+0.071,,,,,The ionization energy was estimated using the observed excitation band of highest energy. Higher than thermal value of Ev+0.065,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
460,['In'],fan1956,fan,1956,[''],,In_,Ev+0.16,Infra-red Absorption in Semiconductors,10.1088/0034-4885/19/1/304,"review, infrared absorption",In__fan1956_1956_Ev+0.16,,,,,The ionization energy was estimated using the observed excitation band of highest energy. Good agreement with the thermal value of Ev+0.16. This turned out to be an acceptor level,,,,,,,,,,,,,,,,,,,,,,,In_s_a.srh,,,,,,,,
959,['Zn'],carlson1957,carlson,1957,['s'],aa,Zn_s,Ec-0.55,Double-Acceptor Behavior of Zinc in Silicon,10.1103/PhysRev.108.1390,Hall,Zn_saa_carlson1957_1957_Ec-0.55,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1071,['Fe'],collins1957a,collins,1957,['i'],d,Fe_i,Ev+0.4,Properties of Silicon Doped with Iron or Copper,10.1103/PhysRev.108.1409,"Hall, LS",Fe_id_collins1957a_1957_Ev+0.4,,,,,capture cross sections from lifetime data.,,,,,,,,,,,,,3e-16,,,,,,,,,,,,,,,,,,
1044,['Fe'],collins1957a,collins,1957,[''],,Fe_,Ec-0.55,Properties of Silicon Doped with Iron or Copper,10.1103/PhysRev.108.1409,Hall,Fe__collins1957a_1957_Ec-0.55,,,,,Quenched n and p-type silicon. Did not see resistivity change in n-type. The defect was observed to switch between two levels. This was confirmed with photoconductance data from Dash. The other level was Ec-0.55,,FZ,,melt,,,,,,,,,,,,,,,,,,,FeB_i-s_d.srh,,,,,,,,
802,"['B', 'Fe']",collins1957a,collins,1957,"['', '']",,B_Fe_,Ec-0.55,Properties of Silicon Doped with Iron or Copper,10.1103/PhysRev.108.1409,Hall,B_Fe__collins1957a_1957_Ec-0.55,,,,,Quenched n and p-type silicon. Did not see resistivity change in n-type.,,FZ,,melt,,15e-16,,,,,,,,,,,,,,,,,FeB_i-s_a.srh,,,,,,,,
879,['Au'],collins1957,collins,1957,['s'],a,Au_s,Ec-0.54,Properties of Gold-Doped Silicon,10.1103/PhysRev.105.1168,Hall,Au_sa_collins1957_1957_Ec-0.54,,,,,Notes both level occur with approximately the same number of defects,,,,,,,,,,,,,,,,,,0.02,,,,,,,,,,,,,
276,['Cu'],collins1957a,collins,1957,['s'],a,Cu_s,Ev+0.49,Properties of Silicon Doped with Iron or Copper,10.1103/PhysRev.108.1409,Hall,Cu_sa_collins1957a_1957_Ev+0.49,,,,,"Copper was hard to manage as it precipiates. They saw two additional levels Ec-0.23 and Ev+0.45, but believe it was due to contaminants in the copper.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
897,['Au'],collins1957,collins,1957,['s'],d,Au_s,Ev+0.35,Properties of Gold-Doped Silicon,10.1103/PhysRev.105.1168,Hall,Au_sd_collins1957_1957_Ev+0.35,,,,,Notes both level are in the same number,,,,,,,,,,,,,,,,,,0.02,,,,,,,,,,,,,
946,['Zn'],carlson1957,carlson,1957,['s'],a,Zn_s,Ev+0.32,Double-Acceptor Behavior of Zinc in Silicon,10.1103/PhysRev.108.1390,Hall,Zn_sa_carlson1957_1957_Ev+0.32,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
271,['Cu'],collins1957a,collins,1957,['s'],d,Cu_s,Ev+0.24,Properties of Silicon Doped with Iron or Copper,10.1103/PhysRev.108.1409,Hall,Cu_sd_collins1957a_1957_Ev+0.24,,,,,"Copper was hard to manage as it precipiates. They saw two additional levels Ec-0.23 and Ev+0.45, but believe it was due to contaminants in the copper.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
898,['Au'],bemski1958,bemski,1958,['s'],d,Au_s,None,Recombination Properties of Gold in Silicon,10.1103/PhysRev.111.1515,LS-DINT,Au_sd_bemski1958_1958_None,,,,,200 - 500K,,,,,,,,,,,,,1.00E-13,,3.5e-15*(T/300)**(-2.5),,,,,,,,,,,,,,,,
461,['In'],wertheim1958,wertheim,1958,[''],,In_,None,Transient Recombination of Excess Carriers in Semiconductors,10.1103/PhysRev.109.1086,LS-T,In__wertheim1958_1958_None,,,,,"Was not sure what the defect is, but it is in indium doped Silicon. This turned out to be an acceptor level",,,,,,,,,,,,,1.5e-9*T**(-2),,1.1e-14*T**(-1),,,,,,,,In_s_a.srh,,,,,,,,
880,['Au'],bemski1958,bemski,1958,['s'],a,Au_s,None,Recombination Properties of Gold in Silicon,10.1103/PhysRev.111.1515,LS-DINT,Au_sa_bemski1958_1958_None,,,,,200 - 500K,,,,,,,,,,,,,1E-15*(T/300)**(-4),,5E-16 * T**(0),,,,,,,,,,,,,,,,
899,['Au'],davis1959,davis,1959,['s'],d,Au_s,None,Lifetimes and Capture Cross Sections in Gold-Doped Silicon,10.1103/PhysRev.114.1006,LS,Au_sd_davis1959_1959_None,,,,,77K. ,,,,,,,,,,,,,2.00E-15,,1.00E-13,,,,,,,,,,,,,,,,
881,['Au'],davis1959,davis,1959,['s'],a,Au_s,None,Lifetimes and Capture Cross Sections in Gold-Doped Silicon,10.1103/PhysRev.114.1006,LS,Au_sa_davis1959_1959_None,,,,,77K. ,,,,,,,,,,,,,1.00E-13,,2.00E-15,,,,,,,,,,,,,,,,
900,['Au'],fairfield1965,fairfield,1965,['s'],d,Au_s,None,Gold as a recombination centre in silicon,10.1016/0038-1101(65)90036-5,LS-DN,Au_sd_fairfield1965_1965_None,,,,,300 K,,,,,,,,,,,,,0.000000024/1.688e7,0.000000063*.25/2.046e7,0.000000063/2.046e7,,,,,,,,,,,,,,,0.000000024*.5/1.688e7,
882,['Au'],fairfield1965,fairfield,1965,['s'],a,Au_s,None,Gold as a recombination centre in silicon,10.1016/0038-1101(65)90036-5,LS-DN,Au_sa_fairfield1965_1965_None,,,,,Values at 300 K,,,,,,,,,,,,,0.000000115/1.688e7,0.00000000165*0.15/20460000,1.65e-9/20460000,,,,,,,,,,,,,,,0.000000115*0.3/1.688e7,
859,['Au'],sah1967_1,sah,1967,[''],a,Au_,None,Recombination Properties of the Gold Acceptor Level in Silicon using the Impurity Photovoltaic Effect,10.1103/PhysRevLett.19.71,"DLTS, DC-TI",Au_a_sah1967_1_1967_None,Ev+0.54723,,,,Thermal emission rate of holes: 1.17e12(T/300)^2*exp(-0.54723/kT). Capture rates are also provided,,,,,,,0.00217,,,,,,,,,,,,,,,,Au_s_a.srh,,,,,,,,
871,['Au'],sah1967,sah,1967,[''],d,Au_,None,Recombination Properties of the Gold Acceptor Level in Silicon using the Impurity Photovoltaic Effect,10.1103/PhysRevLett.19.71,"DLTS, DC-TI",Au_d_sah1967_1967_None,Ec-0.345,,,,Thermal emission rate of electrons: 2.43e13(T/300)^2*exp(-0.350/kT). Capture rates are also provided,,,,,,,0.0029,,,,,,,,,,,,,,,,,,,,,,,,
858,['Au'],sah1967,sah,1967,[''],a,Au_,None,Recombination Properties of the Gold Acceptor Level in Silicon using the Impurity Photovoltaic Effect,10.1103/PhysRevLett.19.71,"DLTS, DC-TI",Au_a_sah1967_1967_None,Ec-0.58981,,,,Thermal emission rate of electrons: 5.23e11(T/300)^2*exp(-0.58981/kT). Capture rates are also provided,,,,,,,0.00215,,,,,,,,,,,,,,,,,,,,,,,,
1094,['Fe'],schibli1968_1,schibli,1968,[''],d,Fe_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,Fe_d_schibli1968_1_1968_None,,,,,250-350 K,,,,,,,,,,,,,7.00E-16,,,,,,,,,,,,,,,,,,
450,['In'],schibli1968_4,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_4_1968_None,,,,,"16-60K,the thermal velocity assumed here is incorrect",,,,,,,,,,,,,,,8E-015/1e7,,,,,,,,,,,,,,,,
449,['In'],schibli1968_3,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_3_1968_None,,,,,"30 K, the thermal velocity assumed here is incorrect",,,,,,,,,,,,,,,,,,,,,,,,0.000000000002*exp(0.035/kT),,,,,,,
947,['Zn'],schibli1968,schibli,1968,['s'],a,Zn_s,Ev+0.31,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,Zn_sa_schibli1968_1968_Ev+0.31,,,,,"80-200 K, could not find original paper",,,,,,,,,,,,,1.00E-13,,1.00E-15,,,,,,,,,,,,,,,,
1152,['W'],schibli1968,schibli,1968,[''],aa,W_,Ec-0.3,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,W_aa_schibli1968_1968_Ec-0.3,,,,,,,,,,,,,,,,,,,,6.00E-17,,,,,,,,,,,,,,,,
949,['Zn'],schibli1968_2,schibli,1968,['s'],a,Zn_s,Ev+0.31,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,Zn_sa_schibli1968_2_1968_Ev+0.31,,,,,"80-200 K, could not find original paper",,,,,,,,,,,,,1.00E-14,,5.00E-16,,,,,,,,,,,,,,,,
448,['In'],schibli1968_2,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_2_1968_None,,,,,80 K,,,,,,,,,,,,,,,4E-022 * (T/80)**-3,,,,,,,,,,,,,,,,
1164,['W'],schibli1968,schibli,1968,[''],aaa,W_,Ec-0.22,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,W_aaa_schibli1968_1968_Ec-0.22,,,,,Two time constants of emission observed for this level,,,,,,,,,,,,,,2e-16,8.00E-16,,,,,,,,,,,,,,,,
447,['In'],schibli1968_12,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_12_1968_None,,,,,"77 K,the thermal velocity assumed here is incorrect",,,,,,,,,,,,,,,,,,,,,,,,,0.000001*exp(0.055/kT)/exp(0.055/k/77),,,,,,
446,['In'],schibli1968_11,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_11_1968_None,,,,,78 K,,,,,,,,,,,,,1.50E-06,,,,,,,,,,,,,,,,,,
948,['Zn'],schibli1968_1,schibli,1968,['s'],a,Zn_s,Ev+0.31,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,Zn_sa_schibli1968_1_1968_Ev+0.31,,,,,"77 K, could not find original paper",,,,,,,,,,,,,3.00E-14,,,,,,,,,,,,,,,,,,
453,['In'],schibli1968_7,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_7_1968_None,,,,,77 K,,,,,,,,,,,,,7.00E-14,,7.00E-19,,,,,,,,,,,,,,,,
264,['Cu'],schibli1968,schibli,1968,[''],d,Cu_,Ev+0.24,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,Cu_d_schibli1968_1968_Ev+0.24,,,,,,,,,,,,,,,,,,3.50E-20,,,,,,,,,,,,,,,,,,
1167,['W'],schibli1968,schibli,1968,[''],a,W_,Ec-0.37,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,W_a_schibli1968_1968_Ec-0.37,,,,,,,,,,,,,,,,,,,,2.50E-18,,,,,,,,,,,,,,,,
454,['In'],schibli1968_8,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_8_1968_None,,,,,77 K,,,,,,,,,,,,,7.00E-14,,1.00E-18,,,,,,,,,,,,,,,,
445,['In'],schibli1968_10,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_10_1968_None,,,,,77 K,,,,,,,,,,,,,3.00E-06,,,,,,,,,,,,,,,,,1e-06,
88,['P'],schibli1968_1,schibli,1968,[''],d,P_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,P_d_schibli1968_1_1968_None,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1093,['Fe'],schibli1968,schibli,1968,[''],d,Fe_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,Fe_d_schibli1968_1968_None,,,,,250-350 K,,,,,,,,,,,,,3.00E-16,,1.50E-15,,,,,,,,,,,,,,,,
444,['In'],schibli1968_1,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_1_1968_None,,,,,> 125 K,,,,,,,,,,,,,1.00E-18,,1.00E-19,,,,,,,,,,,,,,,,
87,['P'],schibli1968,schibli,1968,[''],d,P_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,P_d_schibli1968_1968_None,,,,,,,,,,,,,,,,,,2.00E-14,,8.00E-12,,,,,,,,,,,,,,,,
960,['Zn'],schibli1968,schibli,1968,['s'],aa,Zn_s,Ec-0.55,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,Zn_saa_schibli1968_1968_Ec-0.55,,,,,"90-200 K, could not find original paper",,,,,,,,,,,,,,,1.00E-16,,,,,,,,,,,,,,,,
961,['Zn'],schibli1968_1,schibli,1968,['s'],aa,Zn_s,Ec-0.55,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,Zn_saa_schibli1968_1_1968_Ec-0.55,,,,,"80 K, could not find original paper",,,,,,,,,,,,,,,1.00E-18,,,,,,,,,,,,,,,,
443,['In'],schibli1968,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_1968_None,,,,,300 K,,,,,,,,,,,,,0.000000000000017*(T/300)**(-2),,3.7E-017*(T/300)**(-1),,,,,,,,,,,,,,,,
962,['Zn'],schibli1968_2,schibli,1968,['s'],aa,Zn_s,Ec-0.55,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,Zn_saa_schibli1968_2_1968_Ec-0.55,,,,,"100-300 K, could not find original paper",,,,,,,,,,,,,,4.950000000000001e-19,5.05E-19,,,,,,,,,,,,,,,,
455,['In'],schibli1968_9,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_9_1968_None,,,,,"25-30 K,the thermal velocity assumed here is incorrect",,,,,,,,,,,,,,,0.000000000000015/1e7,,,,,,,,,,,,,,,,
780,['B'],schibli1968,schibli,1968,[''],a,B_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,review,B_a_schibli1968_1968_None,,,,,,,,,,,,,,,,,,8.00E-12,,2.00E-14,,,,,,,,,,,,,,,,
452,['In'],schibli1968_6,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_6_1968_None,,,,,77 K,,,,,,,,,,,,,1.00E-13,,9E-017*(T/77)**(-1.3),,,,,,,,,,,,,,,,
451,['In'],schibli1968_5,schibli,1968,[''],a,In_,None,Lifetime and capture cross-section studies of deep impurities in silicon,10.1016/0025-5416(68)90036-0,LS,In_a_schibli1968_5_1968_None,,,,,"1.1-4.2K,the thermal velocity assumed here is incorrect",,,,,,,,,,,,,,,0.00000008/1e7,,,,,,,,,,,,,,,,
928,['Au'],sah1969,sah,1969,[''],,Au_,None,Thermal emission rates of carriers at gold centers in silicon,10.1063/1.1652943,DLTS,Au__sah1969_1969_None,Ec-0.54723,,,,,,,,,,,0.00217,,,,,,,,,,,,,,,,,,,,,,,,
872,['Au'],sah1969,sah,1969,[''],d,Au_,None,Thermal emission rates of carriers at gold centers in silicon,10.1063/1.1652943,DLTS,Au_d_sah1969_1969_None,Ev+0.345,,,,,,,,,,,0.0029,,,,,,,,,,,,,,,,Au_s_d.srh,,,,,,,,
860,['Au'],sah1969,sah,1969,[''],a,Au_,None,Thermal emission rates of carriers at gold centers in silicon,10.1063/1.1652943,DLTS-Mo,Au_a_sah1969_1969_None,Ev+0.58989,,,,,,,,,,,0.00215,,,,,,,,,,,,,,,,Au_s_a.srh,,,,,,,,
873,['Au'],sato1970,sato,1970,[''],d,Au_,None,Measurements of the Thermal-Emission Rates of Electrons and Holes at the Gold Centers in Silicon Using the Small-Signal-Pulsed Field Effect,10.1063/1.1658432,DLTS,Au_d_sato1970_1970_None,Ev+0.34,,,,,,,,,,,,,,,,,,,,180 K,,,,,,,Au_s_d.srh,,,,,,,,
861,['Au'],sato1970,sato,1970,[''],a,Au_,None,Measurements of the Thermal-Emission Rates of Electrons and Holes at the Gold Centers in Silicon Using the Small-Signal-Pulsed Field Effect,10.1063/1.1658432,DLTS,Au_a_sato1970_1970_None,Ec-0.54,,,,,,,,,,,,,,,,,,,,250K,,,,,,,Au_s_a.srh,,,,,,,,
396,['Ag'],yau1971,yau,1971,[''],a,Ag_,None,Thermal ionization rates and energies of electrons and holes at silver centers in silicon,10.1002/pssa.2210060225,DLTS,Ag_a_yau1971_1971_None,Ec-0.538,,,,measurement data taken from laplace DLTS database,,,"boron, phosphorus",thermal,,,0.006,,,,"222,239,258.7,281.8","1,10,100,1000",,,,,,,,,,,,,,,,,,,
383,['Ag'],yau1971,yau,1971,[''],d,Ag_,None,Thermal ionization rates and energies of electrons and holes at silver centers in silicon,10.1002/pssa.2210060225,DLTS,Ag_d_yau1971_1971_None,Ev+0.370,,,,Values are the T^2 energies,,,"boron, phosphorus",thermal,,,0.004,,,,"145.5,156.4,169.1,183.9","1,10,100,1000",,,,,,,,,,,Ag_s_d.srh,,,,,,,,
374,['Si'],chan1971,chan,1971,[''],,Si_,None,Defect Centers in Boron•À_óImplanted Silicon,10.1063/1.1659853,DLTS,Si__chan1971_1971_None,Ec-0.241,,,,Out at 873 K. Believe defects are crystal defects rather than boron related.,,CZ,phosphorus,Boron ion implantation,,,0.008,,4,,,,,,,,,,,,,,,,,,,,,,
375,['Si'],chan1971_1,chan,1971,[''],,Si_,None,Defect Centers in Boron•À_óImplanted Silicon,10.1063/1.1659853,DLTS,Si__chan1971_1_1971_None,Ec-0.558,,,,Out at 873 K. Believe defects are crystal defects rather than boron related.,,CZ,phosphorus,Boron ion implantation,,,0.006,,4,,,,,,,,,,,,,,,,,,,,,,
815,['S'],rosier1971,rosier,1971,['s'],dd,S_s,None,Thermal emission and capture of electrons at sulfur centers in silicon,10.1016/0038-1101(71)90047-5,"DLTS, DC-TI",S_sdd_rosier1971_1971_None,Ec-0.53,,,,Thermal emission rate of: 1.03e12(T/300)^2. Capture rates are also provided,,CZ,phosphorus,thermal,,,0.02,,5,,,,,,,,,,,,,,,,,,,,,,
810,['S'],rosier1971,rosier,1971,['s'],d,S_s,None,Thermal emission and capture of electrons at sulfur centers in silicon,10.1016/0038-1101(71)90047-5,"DLTS, DC-TI",S_sd_rosier1971_1971_None,Ec-0.275,,,,Thermal emission rate of: 1.63e10(T/300)^2. Capture rates are also provided,,CZ,phosphorus,thermal,,,0.015,,5,,,,,,,,,,,,,,,,,,,,,,
818,['Co'],yau1972a,yau,1972,[''],d,Co_,None,"Measurement of trapped-minority-carrier thermal emission rates from Au, Ag, and Co traps in silicon",10.1063/1.1654324,DLTS-Mo,Co_d_yau1972a_1972_None,,,,,,,,"boron, phosphorus",thermal,,,,4.43e13 * exp(-0.377/kT),,,,,,,,,,,,,,,Co_s_d.srh,,,,,,,,
397,['Ag'],yau1972,yau,1972,[''],a,Ag_,None,Thermal emission rates and activation energies of electrons and holes at silver centers in silicon,10.1002/pssa.2210130214,"DLTS, TS-C",Ag_a_yau1972_1972_None,Ec-0.544,,,,,,,"boron, phosphorus",thermal,,,0.002,,,,,,,,,,,,,,,,Ag_s_a.srh,,,0.301e13 * (T/300)**2 * exp(-0.544/kT),,,,,
825,['Co'],yau1972a,yau,1972,[''],a,Co_,None,"Measurement of trapped-minority-carrier thermal emission rates from Au, Ag, and Co traps in silicon",10.1063/1.1654324,DLTS-Mo,Co_a_yau1972a_1972_None,,,,,,,,"boron, phosphorus",thermal,,,,,,,,,,,,,,,,,,,Co_s_a.srh,,,2.59e12 * exp(-0.569/kT),,,,,
963,['Zn'],herman1972,herman,1972,['s'],aa,Zn_s,None,Thermal Ionization Rates and Energies of Holes at the Double acceptor zinc centers in silicon,10.1002/pssa.2210140203,"TS-I, DLTS",Zn_saa_herman1972_1972_None,Ev+0.574,,,,providing the e/T^2 energy level. Done at high electric fields.,,,boron,thermal,,,0.001,1.41e11 * (T/300)**(-2)* exp(-0.574/kT),,,,,,,,,,,,,,,,,,,,,,,
964,['Zn'],sklensky1972,sklensky,1972,['s'],aa,Zn_s,Ec-0.51-3.5e-4*T,Photoelectronic Properties of Zinc Impurity in Silicon centers in silicon,10.1103/PhysRevB.6.1328,"PC-S,TS-I, LS-TM, Hall",Zn_saa_sklensky1972_1972_Ec-0.51-3.5e-4*T,,,,,,,FZ,phosphorus,thermal,,,,,,,,,,,,,,,,,,,,,,,,,,,
384,['Ag'],yau1972,yau,1972,[''],d,Ag_,None,Thermal emission rates and activation energies of electrons and holes at silver centers in silicon,10.1002/pssa.2210130214,"DLTS, TS-C",Ag_d_yau1972_1972_None,Ev+0.378,,,,,,,"boron, phosphorus",thermal,,,0.002,2.6e13 * (T/300)**2 * exp(-0.378/kT),,,,,,,,,,,,,,,Ag_s_d.srh,,,,,,,,
951,['Zn'],sklensky1972,sklensky,1972,['s'],a,Zn_s,Ev+0.31,Photoelectronic Properties of Zinc Impurity in Silicon centers in silicon,10.1103/PhysRevB.6.1328,"PC-S,TS-I, LS-TM, Hall",Zn_sa_sklensky1972_1972_Ev+0.31,,,,,,,FZ,phosphorus,thermal,,,,,,,,,,,1e-20*(1+ 90*exp(-0.040/kT)),,,,,,,,,,,,,,,,
950,['Zn'],herman1972,herman,1972,['s'],a,Zn_s,None,Thermal Ionization Rates and Energies of Holes at the Double acceptor zinc centers in silicon,10.1002/pssa.2210140203,"TS-I, DLTS",Zn_sa_herman1972_1972_None,Ev+0.297,,,,Provided the e/T^2 energy level.,,,boron,thermal,,,0.001,6.78e12 * (T/300)**(-2)* exp(-0.297/kT),,,,,,,,,,,,,,,,,,,,,,,
763,"['B', 'Zn']",herman1972,herman,1972,"['', '']",a,B_Zn_,None,Thermal Ionization Rates and Energies of Holes at the Double acceptor zinc centers in silicon,10.1002/pssa.2210140203,"DLTS, DC-T",B_Zn_a_herman1972_1972_None,Ev+0.167,,,,,,,"boron, phosphorus",thermal,,,,,,,,,,,,,,,,,,,,,,,,,,,
901,['Au'],milnes1973,milnes,1973,['s'],d,Au_s,Ev+0.35,Deep impurities in semiconductors,,review,Au_sd_milnes1973_1973_Ev+0.35,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
549,['Hg'],milnes1973_1,milnes,1973,[''],d,Hg_,Ev+0.25,Deep impurities in semiconductors,,review,Hg_d_milnes1973_1_1973_Ev+0.25,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1201,['Ni'],milnes1973,milnes,1973,['s'],aa,Ni_s,Ec-0.35,Deep impurities in semiconductors,,review,Ni_saa_milnes1973_1973_Ec-0.35,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
37,['O'],milnes1973,milnes,1973,[''],d,O_,Ec-0.16,Deep impurities in semiconductors,,review,O_d_milnes1973_1973_Ec-0.16,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1095,['Fe'],milnes1973,milnes,1973,[''],d,Fe_,Ev+0.4,Deep impurities in semiconductors,,review,Fe_d_milnes1973_1973_Ev+0.4,,,,978-0-471-60670-3,"Figure 2.1, suggested is interstitial",,,,,,,,,,,,,,,,,,,,,,,Fe_i_d.srh,,,,,,,,
1153,['W'],milnes1973,milnes,1973,[''],aa,W_,Ec-0.30,Deep impurities in semiconductors,,review,W_aa_milnes1973_1973_Ec-0.30,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1157,['W'],milnes1973,milnes,1973,[''],d,W_,Ev+0.34,Deep impurities in semiconductors,,review,W_d_milnes1973_1973_Ev+0.34,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1158,['W'],milnes1973_1,milnes,1973,[''],d,W_,Ev+0.31,Deep impurities in semiconductors,,review,W_d_milnes1973_1_1973_Ev+0.31,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1165,['W'],milnes1973,milnes,1973,[''],aaa,W_,Ec-0.37,Deep impurities in semiconductors,,review,W_aaa_milnes1973_1973_Ec-0.37,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1168,['W'],milnes1973,milnes,1973,[''],a,W_,Ec-0.22,Deep impurities in semiconductors,,review,W_a_milnes1973_1973_Ec-0.22,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
398,['Ag'],milnes1973,milnes,1973,[''],a,Ag_,Ec-0.29,Deep impurities in semiconductors,,review,Ag_a_milnes1973_1973_Ec-0.29,,,,978-0-471-60670-3,"Figure 2.1, questionable level",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1179,['Pd'],milnes1973,milnes,1973,['s'],a,Pd_s,Ev+0.34,Deep impurities in semiconductors,,review,Pd_sa_milnes1973_1973_Ev+0.34,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
385,['Ag'],milnes1973,milnes,1973,[''],d,Ag_,Ev+0.32,Deep impurities in semiconductors,,review,Ag_d_milnes1973_1973_Ev+0.32,,,,978-0-471-60670-3,"Figure 2.1, questionable level",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
806,['S'],milnes1973,milnes,1973,[''],d,S_,Ec-0.18,Deep impurities in semiconductors,,review,S_d_milnes1973_1973_Ec-0.18,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
425,['Mo'],milnes1973,milnes,1973,[''],d,Mo_,Ec-0.33,Deep impurities in semiconductors,,review,Mo_d_milnes1973_1973_Ec-0.33,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
426,['Mo'],milnes1973_1,milnes,1973,[''],d,Mo_,Ev+0.34,Deep impurities in semiconductors,,review,Mo_d_milnes1973_1_1973_Ev+0.34,,,,978-0-471-60670-3,"Figure 2.1, questionable if is an donor",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
427,['Mo'],milnes1973_2,milnes,1973,[''],d,Mo_,Ev+0.30,Deep impurities in semiconductors,,review,Mo_d_milnes1973_2_1973_Ev+0.30,,,,978-0-471-60670-3,"Figure 2.1, questionable if is an donor",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1026,['Tl'],milnes1973,milnes,1973,['s'],a,Tl_s,Ev+0.26,Deep impurities in semiconductors,,review. Mainly Hall effect measurements,Tl_sa_milnes1973_1973_Ev+0.26,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
965,['Zn'],milnes1973,milnes,1973,['s'],aa,Zn_s,Ec-0.55,Deep impurities in semiconductors,,review. Mainly Hall effect measurements,Zn_saa_milnes1973_1973_Ec-0.55,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
279,['Cu'],milnes1973_2,milnes,1973,['s'],a,Cu_s,Ev+0.37,Deep impurities in semiconductors,,review,Cu_sa_milnes1973_2_1973_Ev+0.37,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
2,['O'],milnes1973,milnes,1973,[''],a,O_,Ec-0.38,Deep impurities in semiconductors,,review,O_a_milnes1973_1973_Ec-0.38,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
3,['O'],milnes1973_1,milnes,1973,[''],a,O_,Ev+0.35,Deep impurities in semiconductors,,review,O_a_milnes1973_1_1973_Ev+0.35,,,,978-0-471-60670-3,"Figure 2.1, questionable if is an acceptor",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
952,['Zn'],milnes1973,milnes,1973,['s'],a,Zn_s,Ev+0.31,Deep impurities in semiconductors,,review. Mainly Hall effect measurements,Zn_sa_milnes1973_1973_Ev+0.31,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
280,['Cu'],milnes1973_3,milnes,1973,['s'],a,Cu_s,Ev+0.24,Deep impurities in semiconductors,,review,Cu_sa_milnes1973_3_1973_Ev+0.24,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1195,['Ni'],milnes1973,milnes,1973,['s'],a,Ni_s,Ev+0.23,Deep impurities in semiconductors,,review,Ni_sa_milnes1973_1973_Ev+0.23,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
782,['B'],milnes1973,milnes,1973,['s'],a,B_s,Ev+0.045,Deep impurities in semiconductors,,review,B_sa_milnes1973_1973_Ev+0.045,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
277,['Cu'],milnes1973,milnes,1973,['s'],a,Cu_s,Ev+0.52,Deep impurities in semiconductors,,review,Cu_sa_milnes1973_1973_Ev+0.52,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
807,['S'],milnes1973_1,milnes,1973,[''],d,S_,Ec-0.37,Deep impurities in semiconductors,,review,S_d_milnes1973_1_1973_Ec-0.37,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
105,['Se'],milnes1973,milnes,1973,[''],d,Se_,None,Deep impurities in semiconductors,,review,Se_d_milnes1973_1973_None,,,,978-0-471-60670-3,"Figure 2.1, questionable if is an acceptor and if the level exists",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
483,['Ti'],milnes1973,milnes,1973,[''],,Ti_,Ec-0.21,Deep impurities in semiconductors,,review. Mainly Hall effect measurements,Ti__milnes1973_1973_Ec-0.21,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
507,['Pt'],milnes1973,milnes,1973,['s'],a,Pt_s,Ec-0.25,Deep impurities in semiconductors,,review,Pt_sa_milnes1973_1973_Ec-0.25,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
260,['Cd'],milnes1973,milnes,1973,['s'],aa,Cd_s,Ec-0.45,Deep impurities in semiconductors,,review. Mainly Hall effect measurements,Cd_saa_milnes1973_1973_Ec-0.45,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
508,['Pt'],milnes1973_1,milnes,1973,['s'],a,Pt_s,Ev+0.36,Deep impurities in semiconductors,,review,Pt_sa_milnes1973_1_1973_Ev+0.36,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
528,['Pt'],milnes1973,milnes,1973,['s'],d,Pt_s,Ev+0.30,Deep impurities in semiconductors,,review,Pt_sd_milnes1973_1973_Ev+0.30,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
110,['Te'],milnes1973,milnes,1973,[''],d,Te_,Ec-0.14,Deep impurities in semiconductors,,review,Te_d_milnes1973_1973_Ec-0.14,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
168,['Li'],milnes1973,milnes,1973,['i'],d,Li_i,Ec-0.033,Deep impurities in semiconductors,,review,Li_id_milnes1973_1973_Ec-0.033,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
883,['Au'],milnes1973,milnes,1973,['s'],a,Au_s,Ev+0.54,Deep impurities in semiconductors,,review,Au_sa_milnes1973_1973_Ev+0.54,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
542,['Hg'],milnes1973,milnes,1973,[''],a,Hg_,Ec-0.31,Deep impurities in semiconductors,,review,Hg_a_milnes1973_1973_Ec-0.31,,,,978-0-471-60670-3,Figure 2.1.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
186,['Ga'],milnes1973,milnes,1973,['a'],a,Ga_a,Ev+0.063,Deep impurities in semiconductors,,review,Ga_aa_milnes1973_1973_Ev+0.063,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,Ga_a_a.srh,,,,,,,,
666,['Mn'],milnes1973,milnes,1973,[''],a,Mn_,Ev+0.53,Deep impurities in semiconductors,,review. Mainly Hall effect measurements,Mn_a_milnes1973_1973_Ev+0.53,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
257,['Cd'],milnes1973,milnes,1973,['s'],a,Cd_s,Ev+0.55,Deep impurities in semiconductors,,"review, Hall",Cd_sa_milnes1973_1973_Ev+0.55,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
278,['Cu'],milnes1973_1,milnes,1973,['s'],a,Cu_s,Ev+0.49,Deep impurities in semiconductors,,review,Cu_sa_milnes1973_1_1973_Ev+0.49,,,,978-0-471-60670-3,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
255,['Mg'],milnes1973_1,milnes,1973,[''],a,Mg_,Ec-0.25,Deep impurities in semiconductors,,review. Mainly Hall effect measurements,Mg_a_milnes1973_1_1973_Ec-0.25,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
826,['Co'],milnes1973,milnes,1973,[''],a,Co_,Ec-0.53,Deep impurities in semiconductors,,"review, Hall, resistivity, and photo-conductivity.",Co_a_milnes1973_1973_Ec-0.53,,,,978-0-471-60670-3,"Figure 2.1,",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
254,['Mg'],milnes1973,milnes,1973,[''],a,Mg_,Ec-0.11,Deep impurities in semiconductors,,review. Mainly Hall effect measurements,Mg_a_milnes1973_1973_Ec-0.11,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
456,['In'],milnes1973,milnes,1973,[''],a,In_,Ev+0.16,Deep impurities in semiconductors,,review,In_a_milnes1973_1973_Ev+0.16,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
715,['Cr'],milnes1973,milnes,1973,[''],d,Cr_,Ec-0.4,Deep impurities in semiconductors,,review,Cr_d_milnes1973_1973_Ec-0.4,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
548,['Hg'],milnes1973,milnes,1973,[''],d,Hg_,Ev+0.33,Deep impurities in semiconductors,,review,Hg_d_milnes1973_1973_Ev+0.33,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
808,['S'],milnes1973_2,milnes,1973,[''],d,S_,Ec-0.52,Deep impurities in semiconductors,,review,S_d_milnes1973_2_1973_Ec-0.52,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
457,['In'],milnes1973,milnes,1973,['s'],a,In_s,Ev+0.16,Deep impurities in semiconductors,,review,In_sa_milnes1973_1973_Ev+0.16,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
543,['Hg'],milnes1973_1,milnes,1973,[''],a,Hg_,Ec-0.36,Deep impurities in semiconductors,,review,Hg_a_milnes1973_1_1973_Ec-0.36,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
827,['Co'],milnes1973_1,milnes,1973,[''],a,Co_,Ev+0.35,Deep impurities in semiconductors,,"review, Hall, resistivity, and photo-conductivity.",Co_a_milnes1973_1_1973_Ev+0.35,,,,978-0-471-60670-3,"Figure 2.1,",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
194,['Be'],milnes1973,milnes,1973,['s'],a,Be_s,Ev+0.17,Deep impurities in semiconductors,,review. Mainly Hall effect measurements,Be_sa_milnes1973_1973_Ev+0.17,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
147,['Al'],milnes1973,milnes,1973,['s'],a,Al_s,Ev+0.057,Deep impurities in semiconductors,,review,Al_sa_milnes1973_1973_Ev+0.057,,,,978-0-471-60670-3,Figure 2.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
205,['Rh'],pals1974,pals,1974,[''],a,Rh_,None,"Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique",10.1016/0038-1101(74)90157-9,DLTS-CcCr,Rh_a_pals1974_1974_None,Ec-0.315,,,,120 K,,,phosphorus,thermal,,,,,,,,,,,6.3e-15,,,,,,,,,,,1/5.72e-9*exp(-0.315/kT)*T**2,,,,,
1188,['Pd'],pals1974,pals,1974,['s'],d,Pd_s,None,"Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique",10.1016/0038-1101(74)90157-9,DLTS-CcCr,Pd_sd_pals1974_1974_None,Ev+0.3,,,,,,,boron,thermal,,,,,,,,,2.4e-16,,,135,,,,,,,,,,1/7.74e-7*exp(-0.3/kT)*T**2,,,,,
200,['Rh'],pals1974,pals,1974,[''],d,Rh_,None,"Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique",10.1016/0038-1101(74)90157-9,DLTS-CcCr,Rh_d_pals1974_1974_None,Ec-0.534,,,,220 K,,,phosphorus,thermal,,,,,,,,,,,4e-15,,,,,,,,,,,1/1.25e-7*exp(-0.534/kT)*T**2,,,,,
1000,['Unknown-quenched'],yau1974_2,yau,1974,[''],,Unknown-quenched_,None,Quenched-in centers in silicon p+n junctions,10.1016/0038-1101(74)90067-7,"DLTS-MeCr, TS-C",Unknown-quenched__yau1974_2_1974_None,Ev+0.585,,,,Defects quenched after temp >1200 deg. The two levels appear to be due to the same center and are very stable at room temperature. Have a strong field dependence. Capture rate measured at one temperature.  One year later sah1975 said that this was not actual a quenched in defect but caused by heavily diffused surfaces.,,CZ,phosphorus,thermal,,,0.005,,8,,,,,,,,,,,,,,,,,,,,,,
1180,['Pd'],pals1974,pals,1974,['s'],a,Pd_s,None,"Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique",10.1016/0038-1101(74)90157-9,DLTS-CcCr,Pd_sa_pals1974_1974_None,Ec-0.22,,,,95 K,,,phosphorus,thermal,,,,,,,,,,,3.2e-15,,,,,,,,,,,1/1.05e-7*exp(-0.22/kT)*T**2,,,,,
509,['Pt'],pals1974,pals,1974,['s'],a,Pt_s,None,"Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique",10.1016/0038-1101(74)90157-9,DLTS-CcCr,Pt_sa_pals1974_1974_None,Ec-0.23,,,,100 K,,,phosphorus,thermal,,,,,,,,,,,5e-15,,,,,,,,,,,1/7.54e-8*exp(-0.23/kT)*T**2,,,,,
998,['Unknown-quenched'],yau1974,yau,1974,[''],,Unknown-quenched_,None,Quenched-in centers in silicon p+n junctions,10.1016/0038-1101(74)90067-7,"DLTS-Cr, TS-C",Unknown-quenched__yau1974_1974_None,Ec-0.264,,,,Defects quenched after temp >1200 deg. The two levels appear to be due to the same center and are very stable at room temperature. Have a strong field dependence. Capture rate measured at one temperature. One year later sah1975 said that this was not actual a quenched in defect but caused by heavily diffused surfaces.,,CZ,phosphorus,thermal,,,0.003,,8,,,,,,,,,,,,,,,,,,,,,,
999,['Unknown-quenched'],yau1974_1,yau,1974,[''],,Unknown-quenched_,None,Quenched-in centers in silicon p+n junctions,10.1016/0038-1101(74)90067-7,"DLTS-Cr, TS-C",Unknown-quenched__yau1974_1_1974_None,Ec-0.542,,,,Defects quenched after temp >1200 deg. The two levels appear to be due to the same center and are very stable at room temperature. Have a strong field dependence. Capture rate measured at one temperature.  One year later sah1975 said that this was not actual a quenched in defect but caused by heavily diffused surfaces.,,CZ,phosphorus,thermal,,,0.004,,8,,,,,,,,,,,,,,,,,,,,,,
902,['Au'],pals1974,pals,1974,['s'],d,Au_s,None,"Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique",10.1016/0038-1101(74)90157-9,DLTS-CcCr,Au_sd_pals1974_1974_None,Ev+0.346,,,,135 K,,,boron,thermal,,,,,,,,,1.6e-15,,,,,,,,,,,,,1/6.3e-9*exp(-0.346/kT)*T**2,,,,,
529,['Pt'],pals1974,pals,1974,['s'],d,Pt_s,None,"Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique",10.1016/0038-1101(74)90157-9,DLTS-CcCr,Pt_sd_pals1974_1974_None,Ev+0.317,,,,135 K,,,boron,thermal,,,,,,,,,9.7e-16,,,,,,,,,,,,,1/1.17e-7*exp(-0.317/kT)*T**2,,,,,
884,['Au'],pals1974,pals,1974,['s'],a,Au_s,None,"Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique",10.1016/0038-1101(74)90157-9,DLTS-Cc,Au_sa_pals1974_1974_None,Ec-0.56,,,,77-220K,,,phosphorus,thermal,,,,,,,,,,,1.3e-16,,,,,,,,,,,1/3.3e-8*exp(-0.56/kT)*T**2,,,,,
302,"['Si', 'Si']",muller1974,muller,1974,"['v', 'v']",d,Si_vSi_v,None,Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ions,10.1016/0038-1101(74)90007-0,TS-I,Si_vSi_vd_muller1974_1974_None,Ev+0.255,,,,Out at 533 K,,FZ,phosphorus,ion implantation,5e-17,,0.005,,1000,,,,,,,,,,,,,,,,,,,,,,
863,['Au'],nagasawa1975,nagasawa,1975,[''],a,Au_,None,Fast transient capacitance measurements for implanted deep levels in silicon,10.1007/BF00883667,DLTS-Cr,Au_a_nagasawa1975_1975_None,Ec-0.54,Ec-0.54,,,"Evaluated at 295 K, had a gold level higher than the doping.",,,,,,,,,,,,,,,2.18e-15,295 K,,,,,,,Au_s_a.srh,,,,,,,,
236,['Ir'],nagasawa1975,nagasawa,1975,[''],d,Ir_,None,Fast transient capacitance measurements for implanted deep levels in silicon,10.1007/BF00883667,DLTS-Cr,Ir_d_nagasawa1975_1975_None,Ec-0.48,Ec-0.47,,,Evaluated at 293 K,,,,ion implantation,,,,,,,,,,,7.28e-16,,,,,,,,,,,,,,,,
862,['Au'],engstrom1975,engstrom,1975,[''],a,Au_,None,Thermal activation energy of the gold-acceptor level in silicon,10.1063/1.321653,"DLTS, LS-T",Au_a_engstrom1975_1975_None,Ec-0.553,,,,,,,,,,,,,,,,,,,,,,,,,,,Au_s_a.srh,,,,,,,,
1002,['Unknown-quenched'],sah1975_1,sah,1975,[''],,Unknown-quenched_,None,Experiments on the origin of process−induced recombination centers in silicon,10.1063/1.321758,DLTS,Unknown-quenched__sah1975_1_1975_None,Ec-0.5382,,,,Defects quenched after temp >1200 deg. Occurs from strained or disordered surface laye!' and diffuse rapidly into silicon above 1100°C to give a nearly constant defect concentration. Doesn't happen for polished samples.,,CZ,phosphorus,thermal,,,0.0105,,8,,,,,,,,,,,,,,,,,,,,,,
1001,['Unknown-quenched'],sah1975,sah,1975,[''],,Unknown-quenched_,None,Experiments on the origin of process−induced recombination centers in silicon,10.1063/1.321758,DLTS,Unknown-quenched__sah1975_1975_None,Ec-0.276,,,,Defects quenched after temp >1200 deg. Occurs from strained or disordered surface laye!' and diffuse rapidly into silicon above 1100°C to give a nearly constant defect concentration. Doesn't happen for polished samples.,,CZ,phosphorus,thermal,,,0.006,,8,,,,,,,,,,,,,,,,,,,,,,
193,['Be'],nagasawa1975,nagasawa,1975,[''],a,Be_,None,Fast transient capacitance measurements for implanted deep levels in silicon,10.1007/BF00883667,DLTS,Be_a_nagasawa1975_1975_None,Ev+0.43,,,,,,,boron,ion implantation,4.2e-15,,,,,,,,,,,,,,,,,,Be_s_a.srh,,,,,,,,
874,['Au'],nagasawa1975,nagasawa,1975,[''],d,Au_,None,Fast transient capacitance measurements for implanted deep levels in silicon,10.1007/BF00883667,DLTS-Cr,Au_d_nagasawa1975_1975_None,Ev+0.34,,,,,,,,,1.04e-18,,,,,,,,,,,298 K,,,,,,,Au_s_d.srh,,,,,,,,
929,['Au'],wang1976,wang,1976,[''],,Au_,None,Determination of interface and bulk•À_ótrap states of IGFET•À_ó»s using deep•À_ólevel transient spectroscopy,10.1063/1.322381,DLTS,Au__wang1976_1976_None,Ec-0.31,,,,,,,phosphorus,,,,,,,,,,,,,,,,,,,,,,,,,,,,
933,['Au'],wang1976_4,wang,1976,[''],,Au_,None,Determination of interface and bulk•À_ótrap states of IGFET•À_ó»s using deep•À_ólevel transient spectroscopy,10.1063/1.322381,DLTS,Au__wang1976_4_1976_None,Ec-0.13,,,,,,,phosphorus,,,,,,,,,,,,,,,,,,,,,,,,,,,,
930,['Au'],wang1976_1,wang,1976,[''],,Au_,None,Determination of interface and bulk•À_ótrap states of IGFET•À_ó»s using deep•À_ólevel transient spectroscopy,10.1063/1.322381,DLTS,Au__wang1976_1_1976_None,Ec-0.44,,,,,,,phosphorus,,,,,,,,,,,,,,,,,,,,,,,,,,,,
931,['Au'],wang1976_2,wang,1976,[''],,Au_,None,Determination of interface and bulk•À_ótrap states of IGFET•À_ó»s using deep•À_ólevel transient spectroscopy,10.1063/1.322381,DLTS,Au__wang1976_2_1976_None,Ec-0.54,,,,,,,phosphorus,,,6e-15,,,,,,,,,,,,,,,,,,,,,,,,,
932,['Au'],wang1976_3,wang,1976,[''],,Au_,None,Determination of interface and bulk•À_ótrap states of IGFET•À_ó»s using deep•À_ólevel transient spectroscopy,10.1063/1.322381,DLTS,Au__wang1976_3_1976_None,Ec-0.2,,,,,,,phosphorus,,,,,,,,,,,,,,,,,,,,,,,,,,,,
146,"['Al', 'Al']",kimerling1976,kimerling,1976,"['i', 's']",,Al_iAl_s,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",Al_iAl_s_kimerling1976_1976_None,Ev+0.23,,,,In at 473 K out at 523 K.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
157,['Al'],kimerling1976,kimerling,1976,['i'],dd,Al_i,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",Al_idd_kimerling1976_1976_None,Ev+0.25,,,,Out at 473K.,,,,,7e-18,,,,,,,,,,,,,,,,,,,,,,,,,,
982,['Ta'],miyata1976,miyata,1976,[''],d,Ta_,None,Thermal emission rates and activation energies of electrons at tantalum centers in silicon,10.1016/0038-1101(76)90059-9,DLTS,Ta_d_miyata1976_1976_None,Ec-0.232,,,,,,,phosphorus,thermal,,,,,5,,,,,,,,,,,,,,,,,1.59e10 * exp(-0.252/kT),,,,,
151,"['Al', 'Si']",kimerling1976,kimerling,1976,"['', 'v']",d,Al_Si_v,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",Al_Si_vd_kimerling1976_1976_None,Ev+0.48,,,,Out at 473K. Min value for sigma,,,,,1e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
978,['Ta'],miyata1976,miyata,1976,[''],,Ta_,None,Thermal emission rates and activation energies of electrons at tantalum centers in silicon,10.1016/0038-1101(76)90059-9,DLTS,Ta__miyata1976_1976_None,Ec-0.472,,,,,,,phosphorus,thermal,,,,,5,,,,,,,,,,,,,,,,,4.5e10 * exp(-0.503/kT),,,,,
242,['Ir'],lisiak1976,lisiak,1976,[''],,Ir_,None,Rhodium and iridium as deep impurities in silicon,10.1016/0038-1101(76)90087-3,DLTS,Ir__lisiak1976_1976_None,Ec-0.385,,,,Also did lifetime and hall but not included in entry,,,,thermal,,1.3000000000000002e-10,,,,,,,,,,,,,,,,,,,,,,,,,
510,['Pt'],pugnet1976,pugnet,1976,['s'],a,Pt_s,None,Energy levels for platinum and palladium in silicon measured by the dark transient capacitance technique,10.1002/pssa.2210350215,,Pt_sa_pugnet1976_1976_None,Ec-0.242,,,,,,,"boron, phosphorus",thermal,,3.9e-14,0.002,,,,,,,,,,,,,,,,,,,,,,,,
78,"['P', 'Si']",kimerling1976,kimerling,1976,"['', 'v']",d,P_Si_v,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",P_Si_vd_kimerling1976_1976_None,Ec-0.44,,,,"Out at 423K. E_0 = 1.25eV and E_a^0 = 0.95eV, Ea = 1.25eV. Min value for sigma",,,,,,1e-16,,,,,,,,,,,,,,,,,,,,,,,,,
348,['Si'],kimerling1976,kimerling,1976,['v'],a,Si_v,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",Si_va_kimerling1976_1976_None,Ev+0.11,,,,Out at 150K,,,,,5e-17,,,,,,,,,,,,,,,,,,,,,,,,,,
22,"['O', 'Si']",kimerling1976,kimerling,1976,"['', 'v']",d,O_Si_v,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",O_Si_vd_kimerling1976_1976_None,Ec-0.08,,,,Out at 623K,,,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,
358,"['Si', 'Si']",kimerling1976,kimerling,1976,"['v', 'v']",dd,Si_vSi_v,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",Si_vSi_vdd_kimerling1976_1976_None,Ec-0.23,,,,Out at 573K,,,,,2e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
336,"['Si', 'Si']",kimerling1976,kimerling,1976,"['v', 'v']",a,Si_vSi_v,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",Si_vSi_va_kimerling1976_1976_None,Ev+0.21,,,,Out at 573K,,,,,2e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
303,"['Si', 'Si']",kimerling1976,kimerling,1976,"['v', 'v']",d,Si_vSi_v,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",Si_vSi_vd_kimerling1976_1976_None,Ec-0.39,,,,Out at 573K,,,,,4e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
530,['Pt'],pugnet1976,pugnet,1976,['s'],d,Pt_s,None,Energy levels for platinum and palladium in silicon measured by the dark transient capacitance technique,10.1002/pssa.2210350215,,Pt_sd_pugnet1976_1976_None,Ev+0.32,,,,,,,"boron, phosphorus",thermal,,8.8e-15,0.005,,,,,,,,,,,,,,,,,,,,,,,,
217,['C'],kimerling1976,kimerling,1976,['i'],d,C_i,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",C_id_kimerling1976_1976_None,Ev+0.27,,,,,,,,,7e-18,,,,,,,,,,,,,,,,,,,,,,,,,,
243,['Ir'],lisiak1976_1,lisiak,1976,[''],,Ir_,None,Rhodium and iridium as deep impurities in silicon,10.1016/0038-1101(76)90087-3,DLTS,Ir__lisiak1976_1_1976_None,Ec-0.629,,,,Also did lifetime but not included in entry,,,,thermal,,1.3999999999999999e-14,,,,,,,,,,,,,,,,,,,,,,,,,
1181,['Pd'],pugnet1976,pugnet,1976,['s'],a,Pd_s,None,Energy levels for platinum and palladium in silicon measured by the dark transient capacitance technique,10.1002/pssa.2210350215,,Pd_sa_pugnet1976_1976_None,Ec-0.2,,,,,,,phosphorus,,,2.7e-16,0.01,,,,,,,,,,,,,,,,,,,,,,,,
201,['Rh'],lisiak1976,lisiak,1976,[''],d,Rh_,None,Rhodium and iridium as deep impurities in silicon,10.1016/0038-1101(76)90087-3,"DLTS, Hall",Rh_d_lisiak1976_1976_None,Ec-0.59,,,,Value only from DLTS,,,,thermal,,3.6000000000000004e-14,,,,,,,,,,,,,,,,,Rh_s_d.srh,,,,,,,,
339,['Si'],kimerling1976,kimerling,1976,['v'],dd,Si_v,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",Si_vdd_kimerling1976_1976_None,Ec-0.09,,,,Out at 90K,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
206,['Rh'],lisiak1976,lisiak,1976,[''],a,Rh_,None,Rhodium and iridium as deep impurities in silicon,10.1016/0038-1101(76)90087-3,"DLTS, Hall",Rh_a_lisiak1976_1976_None,Ec-0.353,,,,Value only from DLTS,,,,thermal,,8.600000000000001e-13,,,,,,,,,,,,,,,,,,,,,,,,,
210,"['C', 'C']",kimerling1976,kimerling,1976,"['i', 's']",d,C_iC_s,None,New Developments in Defect Studies in Semiconductors,10.1109/TNS.1976.4328529,"DLTS, EPR",C_iC_sd_kimerling1976_1976_None,Ev+0.33,,,,In at 300 K out at 673K,,,,,8e-17,,,,,,,,,,,,,,,,,,,,,,,,,,
23,"['O', 'Si']",glmiller1977,glmiller,1977,"['', 'v']",d,O_Si_v,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,O_Si_vd_glmiller1977_1977_None,Ec-0.08,,,,out at 350. Ea=1.3eV,,,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,
359,"['Si', 'Si']",glmiller1977,glmiller,1977,"['v', 'v']",dd,Si_vSi_v,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,Si_vSi_vdd_glmiller1977_1977_None,Ec-0.23,,,,Out at 300,,,,,,2e-16,,,,,,,,,,,,,,,,,,,,,,,,,
152,"['Al', 'Si']",glmiller1977,glmiller,1977,"['', 'v']",d,Al_Si_v,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,Al_Si_vd_glmiller1977_1977_None,Ev+0.48,,,,Out at 200. Min value for sigma,,,,,1e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
673,['Mn'],evwaraye1977a_3,evwaraye,1977,[''],,Mn_,None,The defect levels in p‐type silicon doped with manganese,10.1063/1.324247,DLTS-Cr,Mn__evwaraye1977a_3_1977_None,Ev+0.51,,,,,,FZ,boron,thermal,,3.69e-16,,,40-60,,,,,,,,,,,,,,,,,,,,,,
25,"['O', 'Si']",evwaraye1977,evwaraye,1977,"['', 'v']",,O_Si_v,None,Electron irradiation damage in antimony doped silicon,10.1063/1.323935,DLTS,O_Si_v_evwaraye1977_1977_None,Ec-0.17,,,,Shows thermal emssion rate,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
672,['Mn'],evwaraye1977a_2,evwaraye,1977,[''],,Mn_,None,The defect levels in p‐type silicon doped with manganese,10.1063/1.324247,DLTS-Cr,Mn__evwaraye1977a_2_1977_None,Ev+0.44,,,,changes with 100 degrees,,FZ,boron,thermal,,3.4500000000000003e-16,,,40-60,,,,,,,,,,,,,,,,,,,,,,
150,"['Al', 'Al']",glmiller1977,glmiller,1977,"['', '']",,Al_Al_,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,Al_Al__glmiller1977_1977_None,Ev+0.23,,,,In at 200 out at 250.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1008,['Unknown'],guldberg1977_2,guldberg,1977,[''],,Unknown_,None,Electron trap annealing in neutron transmutation doped silicon,10.1063/1.89785,DLTS,Unknown__guldberg1977_2_1977_None,Ec-0.19,,,,In at 450 out at 625 K,,FZ,phosphorus,irridation,2e-16,,,,40,,,,,,,,,,,,,,,,,,,,,,
1006,['Unknown'],guldberg1977,guldberg,1977,[''],,Unknown_,None,Electron trap annealing in neutron transmutation doped silicon,10.1063/1.89785,DLTS,Unknown__guldberg1977_1977_None,Ec-0.15,,,,Out at 450 K,,FZ,phosphorus,irridation,2e-16,,,,40,,,,,,,,,,,,,,,,,,,,,,
1007,['Unknown'],guldberg1977_1,guldberg,1977,[''],,Unknown_,None,Electron trap annealing in neutron transmutation doped silicon,10.1063/1.89785,DLTS,Unknown__guldberg1977_1_1977_None,Ec-0.17,,,,in at 475 and out at 550 K,,FZ,phosphorus,irridation,4e-16,,,,40,,,,,,,,,,,,,,,,,,,,,,
1011,['Unknown'],guldberg1977_5,guldberg,1977,[''],,Unknown_,None,Electron trap annealing in neutron transmutation doped silicon,10.1063/1.89785,DLTS,Unknown__guldberg1977_5_1977_None,Ec-0.40,,,,In at 450 out at 525 K,,FZ,phosphorus,irridation,3e-16,,,,40,,,,,,,,,,,,,,,,,,,,,,
353,"['Sb', 'Si']",evwaraye1977,evwaraye,1977,"['', 'v']",,Sb_Si_v,None,Electron irradiation damage in antimony doped silicon,10.1063/1.323935,DLTS-Cr,Sb_Si_v_evwaraye1977_1977_None,Ec-0.39,,,,"At 234 K, Shows thermal emssion rate,",,,,,,,,,,,,,,,4.5E-17,,,,,,,,,,,,,,,,
671,['Mn'],evwaraye1977a_1,evwaraye,1977,[''],,Mn_,None,The defect levels in p‐type silicon doped with manganese,10.1063/1.324247,DLTS-Cr,Mn__evwaraye1977a_1_1977_None,Ev+0.33,,,,,,FZ,boron,thermal,,1.74e-16,,,40-60,,,,,,,,,,,,,,,,,,,,,,
304,"['Si', 'Si']",glmiller1977,glmiller,1977,"['v', 'v']",d,Si_vSi_v,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,Si_vSi_vd_glmiller1977_1977_None,Ec-0.39,,,,Out at 300,,,,,,4e-15,,,,,,,,,,,,,,,,,,,,,,,,,
1010,['Unknown'],guldberg1977_4,guldberg,1977,[''],,Unknown_,None,Electron trap annealing in neutron transmutation doped silicon,10.1063/1.89785,DLTS,Unknown__guldberg1977_4_1977_None,Ec-0.32,,,,Out at 550 K,,FZ,phosphorus,irridation,9.999999999999999e-16,,,,40,,,,,,,,,,,,,,,,,,,,,,
158,['Al'],glmiller1977,glmiller,1977,['i'],dd,Al_i,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,Al_idd_glmiller1977_1977_None,Ev+0.25,,,,Out at 200.,,,,,7e-18,,,,,,,,,,,,,,,,,,,,,,,,,,
1009,['Unknown'],guldberg1977_3,guldberg,1977,[''],,Unknown_,None,Electron trap annealing in neutron transmutation doped silicon,10.1063/1.89785,DLTS,Unknown__guldberg1977_3_1977_None,Ec-0.20,,,,In at 450 out at 725 K,,FZ,phosphorus,irridation,4e-17,,,,40,,,,,,,,,,,,,,,,,,,,,,
1072,['Fe'],gerson1977,gerson,1977,['i'],d,Fe_i,None,A quenched-in defect in boron-doped silicon,10.1063/1.323505,DLTS,Fe_id_gerson1977_1977_None,Ev+0.45,,,,,,"FZ, CZ",boron,,4e-18,,,,1-100,,,,,,,,,,,,,,,,,,,,,,
1013,['Unknown'],guldberg1977_7,guldberg,1977,[''],,Unknown_,None,Electron trap annealing in neutron transmutation doped silicon,10.1063/1.89785,DLTS,Unknown__guldberg1977_7_1977_None,Ec-0.50,,,,"Believed to be a surface effect, In at 450 out at 525 K",,FZ,phosphorus,irridation,1.9999999999999998e-15,,,,40,,,,,,,,,,,,,,,,,,,,,,
135,['Al'],marchand1977_3,marchand,1977,[''],,Al_,None,Study of thermally induced deep levels in Al doped Si,10.1063/1.323383,TS-I,Al__marchand1977_3_1977_None,Ec-0.389,,,,Maybe AlO,,CZ,aluminium,,,,,,1-100,,,,,,,,,,,,,,,,,1.62e9*(T/300)**2*exp(-0.3893/kT),,,,,
134,['Al'],marchand1977_2,marchand,1977,[''],,Al_,None,Study of thermally induced deep levels in Al doped Si,10.1063/1.323383,TS-I,Al__marchand1977_2_1977_None,Ev+0.402,,,,"Maybe AlO, depends on electric field",,CZ,aluminium,,,,,3.15e10*(T/300)**2*exp(-0.4022/kT),1-100,,,,,,,,,,,,,,,,,,,,,,
133,['Al'],marchand1977_1,marchand,1977,[''],,Al_,None,Study of thermally induced deep levels in Al doped Si,10.1063/1.323383,TS-I,Al__marchand1977_1_1977_None,Ev+0.316,,,,"Maybe AlO, depends on electric field",,CZ,aluminium,,,,,2.19e12*(T/300)**2*exp(-0.3166/kT),1-100,,,,,,,,,,,,,,,,,,,,,,
1230,['Ni'],chiavarotti1977_1,chiavarotti,1977,[''],a,Ni_,None,Characterisation of properties of nickel in silicon using thermally stimulated capacitance method,10.1016/0038-1101(77)90012-0,,Ni_a_chiavarotti1977_1_1977_None,Ev+0.41,,,,,,,"boron, phosphorus",,,,0.01,,,,,,,,,,,,,,,,,,,,,,,,
1229,['Ni'],chiavarotti1977,chiavarotti,1977,[''],a,Ni_,None,Characterisation of properties of nickel in silicon using thermally stimulated capacitance method,10.1016/0038-1101(77)90012-0,,Ni_a_chiavarotti1977_1977_None,Ev+0.21,,,,,,,"boron, phosphorus",,,,0.01,,,,,,,,,,,,,,,,,,,,,,,,
349,['Si'],glmiller1977,glmiller,1977,['v'],a,Si_v,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,Si_va_glmiller1977_1977_None,Ev+0.11,,,,Out at 150 K,,,,,5e-17,,,,,,,,,,,,,,,,,,,,,,,,,,
351,"['Si', 'Si']",evwaraye1977,evwaraye,1977,"['v', 'v']",aa,Si_vSi_v,None,Electron irradiation damage in antimony doped silicon,10.1063/1.323935,DLTS,Si_vSi_vaa_evwaraye1977_1977_None,Ec-0.22,,,,"Shows thermal emssion rate,",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
222,['C'],glmiller1977,glmiller,1977,['i'],a,C_i,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,C_ia_glmiller1977_1977_None,Ev+0.25,,,,out at 300,,,,,7e-18,,,,,,,,,,,,,,,,,,,,,,,,,,
79,"['P', 'Si']",glmiller1977,glmiller,1977,"['', 'v']",d,P_Si_v,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,P_Si_vd_glmiller1977_1977_None,Ec-0.44,,,,Out at 150. E_0 = 1.25eV and E_0^0 = 0.95eV. Min value for sigma,,,,,,1e-16,,,,,,,,,,,,,,,,,,,,,,,,,
670,['Mn'],evwaraye1977a,evwaraye,1977,[''],,Mn_,None,The defect levels in p‐type silicon doped with manganese,10.1063/1.324247,DLTS-Cr,Mn__evwaraye1977a_1977_None,Ev+0.22,,,,,,FZ,boron,thermal,,3.88e-16,,,40-60,,,,,,,,,,,,,,,,,,,,,,
337,"['Si', 'Si']",glmiller1977,glmiller,1977,"['v', 'v']",a,Si_vSi_v,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,Si_vSi_va_glmiller1977_1977_None,Ev+0.21,,,,Out at 300,,,,,2e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
132,['Al'],marchand1977,marchand,1977,[''],,Al_,None,Study of thermally induced deep levels in Al doped Si,10.1063/1.323383,TS-I,Al__marchand1977_1977_None,Ev+0.2166,,,,"Maybe AlO, depends on electric field",,CZ,aluminium,,3e-21,,,2.98e5*(T/300)**2*exp(-0.2166/kT),1-100,,,,,,,,,,,,,,,,,,,,,,
1012,['Unknown'],guldberg1977_6,guldberg,1977,[''],,Unknown_,None,Electron trap annealing in neutron transmutation doped silicon,10.1063/1.89785,DLTS,Unknown__guldberg1977_6_1977_None,Ec-0.46,,,,out at 425 K,,FZ,phosphorus,irridation,3e-15,,,,40,,,,,,,,,,,,,,,,,,,,,,
340,['Si'],glmiller1977,glmiller,1977,['v'],,Si_v,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,Si_v_glmiller1977_1977_None,Ec-0.09,,,,out at 90K,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
225,"['C', 'C']",glmiller1977,glmiller,1977,"['s', 'i']",a,C_iC_s,None,Capacitance Transient Spectroscopy,10.1146/annurev.ms.07.080177.002113,DLTS,C_iC_sa_glmiller1977_1977_None,Ev+0.33,,,,In at 300 out at 400,,,,,8e-17,,,,,,,,,,,,,,,,,,,,,,,,,,
853,['Co'],evwaraye1978,evwaraye,1978,[''],,Co_,None,Impurity states in cobalt-doped silicon,10.1007/BF02655644,DLTS,Co__evwaraye1978_1978_None,Ev+0.45,,,,,,FZ,boron,thermal,6e-17,,,,20-60,,,,,,,,,,,,,,,,,,,,,,
885,['Au'],brotherton1978,brotherton,1978,['s'],a,Au_s,None,The electron capture cross section and energy level of the gold acceptor center in silicon,10.1063/1.324641,DLTS-Cr,Au_sa_brotherton1978_1978_None,,Ec-0.555,,,,,,,,,,,,,,,,,,9e-17,,,,,,,,,,,,,,,,
470,['Ti'],chen1979,chen,1979,[''],d,Ti_,Ec-0.22,Titanium in silicon as a deep level impurity,10.1016/0038-1101(79)90130-8,Hall,Ti_d_chen1979_1979_Ec-0.22,,,,,,,CZ,"boron, phosphorus",ion implantation,,,,,"200,300",,,,,,,,,,,,,,Ti_i_d.srh,,,,,,,,
481,['Ti'],chen1979,chen,1979,[''],dd,Ti_,None,Titanium in silicon as a deep level impurity,10.1016/0038-1101(79)90130-8,DLTS-Cr,Ti_dd_chen1979_1979_None,Ev+0.29,Ev+0.255,,,Measured lifetime of 3.35e15 cm^-2 boron doped CZ samples with Titanium at 1.35e13 cm^-2 of 50 ns at 300 K. Control was 7 us.,,CZ,boron,melt,,,,,200.0,,,,1e-17 * exp(-0.035/kT) * exp(0.035/k/1000*4.5),,,200-250 K,,,,,,,Ti_i_dd.srh,,,,,,,,
471,['Ti'],chen1979_1,chen,1979,[''],d,Ti_,None,Titanium in silicon as a deep level impurity,10.1016/0038-1101(79)90130-8,DLTS-Cr,Ti_d_chen1979_1_1979_None,Ec-0.26,Ec-0.26,,,thermal velocity of electrons 1.14e7 * (T/300)^(1/2). No temperature dependence of the capture cross section noticed.,,CZ,"boron, phosphorus","ion implantation, melt",,,,,"300,",,,,,5e-16,3.5e-15 * exp(-0/kT),,,,,,,,Ti_i_d.srh,,,,,,,,
106,['Se'],chen1980,chen,1980,[''],d,Se_,Ec-0.225,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review ,Se_d_chen1980_1980_Ec-0.225,,,,,,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
104,"['B', 'Se']",chen1980,chen,1980,"['', '']",d,B_Se_,Ec-0.2,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,B_Se_d_chen1980_1980_Ec-0.2,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
102,['Se'],grimmeiss1980a_2,grimmeiss,1980,[''],,Se_,None,Electronic properties of selenium‐doped silicon,10.1063/1.328161,DLTS-Cr,Se__grimmeiss1980a_2_1980_None,Ev+0.619,,,,,,,phosphorus,thermal,,,,,,,,,,,,,,,,,,,Se_s_dd.srh,,,,,,,,
251,['Mg'],chen1980_1,chen,1980,['i'],d,Mg_i,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, hall, DLTS",Mg_id_chen1980_1_1980_None,Ec-0.24,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
101,['Se'],grimmeiss1980a_1,grimmeiss,1980,[''],,Se_,None,Electronic properties of selenium‐doped silicon,10.1063/1.328161,DLTS-Cr,Se__grimmeiss1980a_1_1980_None,Ec-0.524,,,,,,,phosphorus,thermal,,,,,,,,,,,,,,,,,,,Se_s_dd.srh,,,,,,,,
98,['K'],chen1980_3,chen,1980,[''],d,K_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, hall, DLTS",K_d_chen1980_3_1980_None,Ev+0.35,,,,Taken from Figure 1,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
195,['Be'],chen1980,chen,1980,['s'],a,Be_s,Ev+0.43,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, lifetime",Be_sa_chen1980_1980_Ev+0.43,,,,,,,,,ion implantation,,,,,,,,,,,4e-15,,,,,,,,,,,,,,,,
100,['Se'],grimmeiss1980a,grimmeiss,1980,[''],,Se_,None,Electronic properties of selenium‐doped silicon,10.1063/1.328161,DLTS-Cr,Se__grimmeiss1980a_1980_None,Ec-0.286,Ev+0.301,,,,,,phosphorus,thermal,,,,,,,,,,,6.24e-9*T**(-3.16),,,,,,,,Se_s_d.srh,,,,,,,,
93,['Zr'],chen1980,chen,1980,['i'],d,Zr_i,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"DLTS, Hall",Zr_id_chen1980_1980_None,Ec-0.07,,,,Review paper.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
86,"['P', 'Si']",chen1980,chen,1980,"['', 'v']",a,P_Si_v,Ec-0.44,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,P_Si_va_chen1980_1980_Ec-0.44,,,,,"this is the E center, but can also be other Group VA atoms.",,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
272,['Cu'],chen1980,chen,1980,['s'],d,Cu_s,Ev+0.22,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, lifetime",Cu_sd_chen1980_1980_Ev+0.22,,,,,,,,,ion implantation,,,,,,,,,3e-14,,8.5e-14,,,,,,,,,,,,,,,,
76,['V'],davis1980_2,davis,1980,[''],,V_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",V__davis1980_2_1980_None,Ec-0.46,,,,This maybe the Vanadium donor level?,,CZ,"boron, phosphorus",melt,,,0.02,,,,,,,,,,,,,,,,,,,,,,,,
75,['V'],davis1980_1,davis,1980,[''],,V_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",V__davis1980_1_1980_None,Ec-0.22,,,,This maybe Vanadium gold?,,CZ,"boron, phosphorus",melt,,,0.01,,,,,,,,,,,,,,,,,,,,,,,,
74,['V'],davis1980,davis,1980,[''],,V_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",V__davis1980_1980_None,Ev+0.42,,,,This maybe Vanadium gold?,16.1,CZ,"boron, phosphorus",melt,1.1e-15,1.77e-14,0.02,,,,,,,,,,,,,,,,,,,,,,,,
96,['K'],chen1980,chen,1980,[''],d,K_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, hall, DLTS",K_d_chen1980_1980_None,Ec-0.04,,,,Donor action is observed after implantation by not observed when Na is introduced by diffusion.,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
107,['Se'],chen1980_1,chen,1980,[''],d,Se_,Ec-0.485,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review ,Se_d_chen1980_1_1980_Ec-0.485,,,,,,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
659,['Mn4'],chen1980,chen,1980,['p'],d,Mn4_p,Ec-0.53,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Mn4_pd_chen1980_1980_Ec-0.53,,,,,Review paper. This is 4 Mn atoms,,,,,,,,,,,,,,,2e-14,,,,,,,,,,,,,,,,
108,['Se'],chen1980_2,chen,1980,[''],d,Se_,Ec-0.3,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review ,Se_d_chen1980_2_1980_Ec-0.3,,,,,,,,,thermal,,,,,,,,,,,,,,,,,,,,,,,,,,,
60,['V'],chen1980,chen,1980,[''],a,V_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"DLTS, Hall",V_a_chen1980_1980_None,Ec-0.49,,,,Review paper.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
711,['Cr'],davis1980,davis,1980,[''],,Cr_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Cr__davis1980_1980_None,Ev+0.22,,,,,0.8,CZ,"boron, phosphorus",melt,3.5e-16,2.6600000000000003e-16,0.01,,,,,,,,,,,,,,,,,,,,,,,,
713,['Cr'],chen1980,chen,1980,['p'],,Cr_p,Ec-0.4,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"EPR, Hall",Cr_p_chen1980_1980_Ec-0.4,,,,,Review paper. This precipitate is neutral,,,,"thermal, quenched",,,,,,,,,,,,,,,,,,,,,,,,,,,
690,['Cr'],davis1980,davis,1980,['i'],d,Cr_i,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Cr_id_davis1980_1980_None,Ec-0.25,,,,,,CZ,"boron, phosphorus",melt,,,0.1,,,,,,,,,,,,,,,,,,,,,,,,
689,['Cr'],chen1980,chen,1980,['i'],d,Cr_i,Ec-0.23,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"EPR, Hall, review",Cr_id_chen1980_1980_Ec-0.23,,,,,Assuming ESR is the same as EPR.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
674,['Mn'],davis1980,davis,1980,[''],,Mn_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Mn__davis1980_1980_None,Ev+0.4,,,,,,,,,,,0.02,,,,,,,,,,,,,,,,,,,,,,,,
261,['Cd'],chen1980,chen,1980,['s'],aa,Cd_s,Ec-0.45,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Cd_saa_chen1980_1980_Ec-0.45,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
645,['Mn'],chen1980,chen,1980,['i'],a,Mn_i,Ec-0.39,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Mn_ia_chen1980_1980_Ec-0.39,,,,,,,,,,,,,,,,,,,,1e-15,,,,,,,,,,,,,,,,
317,"['B', 'Si']",chen1980,chen,1980,"['s', 'v']",,B_sSi_v,Ev+0.45,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,B_sSi_v_chen1980_1980_Ev+0.45,,,,,,,,,radiation,,,,,,,,,,,,,,,,,,,,,,,,,,,
546,['Hg'],chen1980,chen,1980,[''],,Hg_,Ec-0.39,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Hg__chen1980_1980_Ec-0.39,,,,,,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
1253,['Nd'],chen1980,chen,1980,[''],a,Nd_,Ev+0.21,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Nd_a_chen1980_1980_Ev+0.21,,,,,,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
252,['Mg'],chen1980_2,chen,1980,['i'],d,Mg_i,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, hall, DLTS",Mg_id_chen1980_2_1980_None,Ev+0.6,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
109,['Gd'],chen1980,chen,1980,[''],,Gd_,Ev+0.55,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Gd__chen1980_1980_Ev+0.55,,,,,,,,,thermal,,,,,,,,,,,,,,,,,,,,,,,,,,,
258,['Cd'],chen1980,chen,1980,['s'],a,Cd_s,Ev+0.55,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Cd_sa_chen1980_1980_Ev+0.55,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
712,['Cr'],davis1980_1,davis,1980,[''],,Cr_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Cr__davis1980_1_1980_None,Ev+0.31,,,,,,CZ,"boron, phosphorus",melt,,,0.02,,,,,,,,,,,,,,,,,,,,,,,,
250,['Mg'],chen1980,chen,1980,['i'],d,Mg_i,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, hall, DLTS",Mg_id_chen1980_1980_None,Ec-0.11,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
34,"['B', 'O']",chen1980,chen,1980,"['s', 'i']",,B_sO_i,Ec-0.27,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, EPR",B_sO_i_chen1980_1980_Ec-0.27,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
207,['Rh'],chen1980,chen,1980,[''],a,Rh_,Ec-0.3,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Rh_a_chen1980_1980_Ec-0.3,,,,,Contention if is an acceptor level,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
116,['Te'],chen1980_1,chen,1980,[''],a,Te_,Ev+0.5,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review ,Te_a_chen1980_1_1980_Ev+0.5,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
53,['V'],chen1980,chen,1980,[''],d,V_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,DLTS,V_d_chen1980_1980_None,Ev+0.41,,,,Review paper.,,,,ion implantation,,,0.01,,,,,,,,,,,,,,,,,,,,,,,,
97,['K'],chen1980_2,chen,1980,[''],d,K_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, hall, DLTS",K_d_chen1980_2_1980_None,Ec-0.26,,,,Taken from Figure 1,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
308,"['Si', 'Si']",chen1980,chen,1980,"['v', 'v']",,Si_vSi_v,Ec-0.23,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Si_vSi_v_chen1980_1980_Ec-0.23,,,,,,,,,,,,,,,,,,,,6.00E-17,,,,,,,,,,,,,,,,
8,"['O', 'Si', 'Si']",chen1980,chen,1980,"['', 'v', 'v']",,O_Si_vSi_v,Ev+0.35,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,O_Si_vSi_v_chen1980_1980_Ev+0.35,,,,,,,,,radiation,,,,,,,,,,,,,,,,,,,,,,,,,,,
10,"['Al', 'O']",chen1980,chen,1980,"['', '']",,Al_O_,Ec-0.39,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, TS-C",Al_O__chen1980_1980_Ec-0.39,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
247,['Na'],chen1980_2,chen,1980,[''],d,Na_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, hall, DLTS",Na_d_chen1980_2_1980_None,Ec-0.25,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
11,"['Al', 'O']",chen1980_1,chen,1980,"['', '']",,Al_O_,Ev+0.402,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, TS-C",Al_O__chen1980_1_1980_Ev+0.402,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
13,"['Al', 'O']",chen1980_3,chen,1980,"['', '']",,Al_O_,Ev+0.216,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, TS-C",Al_O__chen1980_3_1980_Ev+0.216,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
310,"['Si', 'Si']",chen1980_2,chen,1980,"['v', 'v']",,Si_vSi_v,Ev+0.27,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Si_vSi_v_chen1980_2_1980_Ev+0.27,,,,,,,,,,,,,,,,,,,,,,,0.01,,,,,,,,,,,,,
309,"['Si', 'Si']",chen1980_1,chen,1980,"['v', 'v']",,Si_vSi_v,Ec-0.41,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Si_vSi_v_chen1980_1_1980_Ec-0.41,,,,,,,,,,,,,,,,,,,,1.62E-16,,,,,,,,,,,,,,,,
26,"['O', 'Si']",chen1980,chen,1980,"['', 'v']",,O_Si_v,Ec-0.174,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,O_Si_v_chen1980_1980_Ec-0.174,,,,,Known as A centre,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
196,['Be'],chen1980_1,chen,1980,['s'],a,Be_s,Ev+0.17,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, lifetime",Be_sa_chen1980_1_1980_Ev+0.17,,,,,From Figure 1,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
886,['Au'],lang1980,lang,1980,['s'],a,Au_s,Ec-0.553 + 3 *k *T,Complex nature of gold-related deep levels in silicon,10.1103/PhysRevB.22.3917,DLTS-Cr,Au_sa_lang1980_1980_Ec-0.553 + 3 *k *T,Ec-0.553,Ec-0.553,,,Ed reported at 250 k,,,,,,,,,,,,,,,1.7e-16*T**0,,,,,,,,,,,,,,,,
12,"['Al', 'O']",chen1980_2,chen,1980,"['', '']",,Al_O_,Ev+0.316,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, TS-C",Al_O__chen1980_2_1980_Ev+0.316,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
111,['Te'],chen1980,chen,1980,[''],d,Te_,Ec-0.137,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, theory",Te_d_chen1980_1980_Ec-0.137,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
112,['Te'],chen1980_1,chen,1980,[''],d,Te_,Ec-0.0161,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, theory",Te_d_chen1980_1_1980_Ec-0.0161,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
113,['Te'],chen1980_2,chen,1980,[''],d,Te_,Ec-0.265,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, theory",Te_d_chen1980_2_1980_Ec-0.265,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
208,['Rh'],chen1980_1,chen,1980,[''],a,Rh_,Ec-0.55,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Rh_a_chen1980_1_1980_Ec-0.55,,,,,Contention if is an acceptor level,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
221,"['C', 'In']",chen1980,chen,1980,"['s', 's']",,C_sIn_s,Ev+0.111,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,C_sIn_s_chen1980_1980_Ev+0.111,,,,,"This could also be indium vacancy, indium interstitials in the split configuration or indium interstitials in the bond-centered configuration.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
169,['Li'],chen1980,chen,1980,['i'],d,Li_i,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, hall, DLTS",Li_id_chen1980_1980_None,Ec-0.033,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
148,['Al'],chen1980,chen,1980,['s'],a,Al_s,Ev+0.057,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Al_sa_chen1980_1980_Ev+0.057,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
139,['Al'],davis1980_1,davis,1980,[''],,Al_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Al__davis1980_1_1980_None,Ev+0.47,,,,,,CZ,"boron, phosphorus",melt,,,0.03,,,,,,,,,,,,,,,,,,,,,,,,
138,['Al'],davis1980,davis,1980,[''],,Al_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Al__davis1980_1980_None,Ev+0.43,,,,,2.5,CZ,"boron, phosphorus",melt,5.7e-15,1.4e-14,0.05,,,,,,,,,,,,,,,,,,,,,,,,
137,['Al'],chen1980_1,chen,1980,[''],,Al_,Ev+0.43,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Al__chen1980_1_1980_Ev+0.43,,,,,,,,,thermal,,,,,,,,,,,,,,,,,,,,,,,,,,,
136,['Al'],chen1980,chen,1980,[''],,Al_,Ev+0.47,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Al__chen1980_1980_Ev+0.47,,,,,,,,,thermal,,,,,,,,,,,,,,,,,,,,,,,,,,,
249,['Na'],chen1980_2,chen,1980,[''],a,Na_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, hall, DLTS",Na_a_chen1980_2_1980_None,Ev+0.35,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
239,['Ir'],chen1980,chen,1980,['i'],,Ir_i,Ec-0.35,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ir_i_chen1980_1980_Ec-0.35,,,,,Different values achieved from depletion layer thermionic messions,,,,,,,,,,,,,1.00E-17,,,,,0.05,,,,,,,,,,,,,
115,['Te'],chen1980,chen,1980,[''],a,Te_,Ev+0.13,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review ,Te_a_chen1980_1980_Ev+0.13,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
244,['Ir'],chen1980,chen,1980,[''],,Ir_,Ec-0.185,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ir__chen1980_1980_Ec-0.185,,,,,due to donor impurities present originally in the samples,,,,,,,,,,,,,1.60E-16,,,,,0.015,,,,,,,,,,,,,
245,['Ir'],chen1980_1,chen,1980,[''],,Ir_,Ec-0.53,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ir__chen1980_1_1980_Ec-0.53,,,,,due to atoms present at the silicon lattice sites or forming a configuration with rigid bonds to the lattice atoms. Different values achieved from depletion layer thermionic messions,,,,,,,,,,,,,,1e-17,1.70E-16,,,0.03,,,,,,,,,,,,,
246,['Na'],chen1980,chen,1980,[''],d,Na_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, hall, DLTS",Na_d_chen1980_1980_None,Ec-0.0375,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
114,['Te'],chen1980_3,chen,1980,[''],d,Te_,Ev+0.539,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, theory",Te_d_chen1980_3_1980_Ev+0.539,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
248,['Na'],chen1980,chen,1980,[''],a,Na_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, hall, DLTS",Na_a_chen1980_1980_None,Ev+0.21,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
714,['Cr'],chen1980,chen,1980,['i'],dd,Cr_i,Ev+0.11,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"EPR, Hall, review",Cr_idd_chen1980_1980_Ev+0.11,,,,,Assuming ESR is the same as EPR.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1073,['Fe'],davis1980,davis,1980,['i'],d,Fe_i,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Fe_id_davis1980_1980_None,Ev+0.4,,,,,,CZ,"boron, phosphorus",melt,,,0.04,,,,,,,,,,,,,,,,,,,,,,,,
330,"['Si', 'Si', 'Si']",chen1980,chen,1980,"['v', 'v', 'v']",,Si_vSi_vSi_v,Ev+0.55,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Si_vSi_vSi_v_chen1980_1980_Ev+0.55,,,,,May also be  OsiSi,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
979,['Ta'],davis1980,davis,1980,[''],,Ta_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Ta__davis1980_1980_None,,,,,Tentative data,,CZ,"boron, phosphorus",melt,,5.9e-14,,,,,,,,,,,,,,,,,,,,,,,,,
983,['Ta'],chen1980,chen,1980,[''],d,Ta_,Ec-0.14,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ta_d_chen1980_1980_Ec-0.14,,,,,Review paper. different techniques providing different things,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
984,['Ta'],chen1980_1,chen,1980,[''],d,Ta_,Ev+0.4,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ta_d_chen1980_1_1980_Ev+0.4,,,,,Review paper. different techniques providing different things,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
989,['Ta'],chen1980,chen,1980,[''],a,Ta_,Ec-0.232,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ta_a_chen1980_1980_Ec-0.232,,,,,Review paper. different techniques providing different things,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
990,['Ta'],chen1980_1,chen,1980,[''],a,Ta_,Ec-0.472,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ta_a_chen1980_1_1980_Ec-0.472,,,,,Review paper. different techniques providing different things,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
993,['La'],chen1980,chen,1980,[''],d,La_,Ev+0.2,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,La_d_chen1980_1980_Ev+0.2,,,,,Review paper. assumed to be disordered states,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
966,['Zn'],chen1980,chen,1980,['s'],aa,Zn_s,Ec-0.55,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Zn_saa_chen1980_1980_Ec-0.55,,,,,Reported thermal capture rates from which capture cross sections can be determined.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
994,['Cs'],chen1980,chen,1980,[''],d,Cs_,Ec-0.28,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, lifetime",Cs_d_chen1980_1980_Ec-0.28,,,,,an implant of 10 13 Cs atoms per cm2 and subsequent anneal resulting in a lifetime reduction of 10-5 diffusion.,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
997,['Cs'],chen1980,chen,1980,[''],a,Cs_,Ev+0.21,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, lifetime",Cs_a_chen1980_1980_Ev+0.21,,,,,an implant of 10 13 Cs atoms per cm2 and subsequent anneal resulting in a lifetime reduction of 10-5 diffusion.,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
1027,['Tl'],chen1980,chen,1980,['s'],a,Tl_s,Ev+0.24,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Tl_sa_chen1980_1980_Ev+0.24,,,,,Review paper. Optical capture cross section of 2.6e-19,,,,,,,,,,,,,,,2.4e-14,,,"0,0.15",,,,,,,,,,,,,
1028,['Tl'],chen1980,chen,1980,['i'],d,Tl_i,Ec-0.28,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Tl_id_chen1980_1980_Ec-0.28,,,,,Review paper. Has different annealing behaviour to Tl_s_a so is not substitutional. For this reason it is believed to be substitutional.,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
1029,['Ho'],chen1980,chen,1980,[''],a,Ho_,Ev+0.066,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ho_a_chen1980_1980_Ev+0.066,,,,,Ho levels unrealted,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1030,['Ho'],chen1980_1,chen,1980,[''],a,Ho_,Ev+0.35,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ho_a_chen1980_1_1980_Ev+0.35,,,,,Ho levels unrealted,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1251,['Ce'],chen1980,chen,1980,[''],d,Ce_,Ec-0.2,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ce_d_chen1980_1980_Ec-0.2,,,,,,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
995,['Cs'],chen1980_2,chen,1980,[''],d,Cs_,Ec-0.51,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, lifetime",Cs_d_chen1980_2_1980_Ec-0.51,,,,,an implant of 10 13 Cs atoms per cm2 and subsequent anneal resulting in a lifetime reduction of 10-5 diffusion.,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
1250,['Ce'],chen1980_1,chen,1980,[''],a,Ce_,Ev+0.17,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ce_a_chen1980_1_1980_Ev+0.17,,,,,,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
953,['Zn'],chen1980,chen,1980,['s'],a,Zn_s,Ev+0.31,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Zn_sa_chen1980_1980_Ev+0.31,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
0,"['B', 'O', 'Si']",chen1980,chen,1980,"['s', 'i', 'v']",,B_sO_iSi_v,Ev+0.3,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, EPR",B_sO_iSi_v_chen1980_1980_Ev+0.3,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
813,['S'],grimmeiss1980,grimmeiss,1980,[''],,S_,None,Deep sulfur-related centers in silicon,10.1063/1.328279,DLTS,S__grimmeiss1980_1980_None,Ec-0.2,,,,Appeared in different concentration to the above levels in this paper.,,,phosphorus,thermal,,,,,10,,,,,,,,,,,,,,,,,,,,,,
468,['Bi'],chen1980,chen,1980,[''],d,Bi_,Ec-0.0745,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, TS-C",Bi_d_chen1980_1980_Ec-0.0745,,,,,Agrees well with 4 K optical measurements of 0.0709 eV,,,,thermal,,,,,,,,,,,,,,,,,,,,,,,,,,,
469,['Bi'],chen1980_1,chen,1980,[''],d,Bi_,Ec-0.24,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Bi_d_chen1980_1_1980_Ec-0.24,,,,,Apparent donor,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
430,['Mo'],chen1980_2,chen,1980,[''],d,Mo_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Mo_d_chen1980_2_1980_None,,Ev+0.28,,,Figure 4,,,,,,,,,,,,,1.1e-8/1e7,,,,,,,,,,,,1.1e-08,,,,,,
428,['Mo'],chen1980,chen,1980,[''],d,Mo_,Ec-0.3,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Mo_d_chen1980_1980_Ec-0.3,,,,,Figure 4,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
416,['Mo'],rohatgi1980,rohatgi,1980,['i'],d,Mo_i,None,The impact of molybdenum on silicon and silicon solar cell performance,10.1016/0038-1101(80)90032-5,"DLTS-Cr, LS-N",Mo_id_rohatgi1980_1980_None,Ev+0.30,,,,"DLTS peak at 177.5K, at which the capture rate was measured.",,CZ,boron,melt,,1.6e-14,,,4-6,,,,4.31e-16,,,,,,,,,,,,,,,,,,
484,['Ti'],davis1980,davis,1980,[''],,Ti_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Ti__davis1980_1980_None,Ev+0.3,,,,,12.5,CZ,"boron, phosphorus",melt,8.300000000000001e-16,1.04e-14,0.02,,,,,,,,,,,,,,,,Ti_i_dd.srh,,,,,,,,
458,['In'],chen1980,chen,1980,['s'],a,In_s,Ev+0.16,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,In_sa_chen1980_1980_Ev+0.16,,,,,"Review paper. Wide range of electron capture cross sections were provided. It is unknown why, the value reported here is believed to be the correct value.",,,,,,,,,,,,,4e-7*(T/77)**-4/1e7,,2e-15,,,,,,,,,,,,,,,,
413,['Mo'],davis1980,davis,1980,[''],,Mo_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Mo__davis1980_1980_None,Ev+0.3,,,,,2.4,CZ,"boron, phosphorus",melt,7.8e-15,1.85e-14,0.1,,,,,,,,,,,,,,,,Mo_i_d.srh,,,,,,,,
354,"['Sb', 'Si']",chen1980,chen,1980,"['', 'v']",,Sb_Si_v,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, DLTS",Sb_Si_v_chen1980_1980_None,Ec-0.39,,,,Measured at 234 K,,,,,,4.50E-17,,,,,,,,,,,,,,,,,,,,,,,,,
386,['Ag'],chen1980,chen,1980,[''],d,Ag_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"DLTS, Hall",Ag_d_chen1980_1980_None,Ev+0.32,,,,This was noted to be a distribution of energies from 0.26-0.45 eV,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
399,['Ag'],chen1980,chen,1980,[''],a,Ag_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"DLTS, Hall",Ag_a_chen1980_1980_None,Ec-0.29,,,,This was noted to be a distribution of energies from 0.29-0.35 eV.,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
433,['Sc'],chen1980,chen,1980,[''],a,Sc_,Ec-0.4,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Sc_a_chen1980_1980_Ec-0.4,,,,,Review paper. assumed to be disordered states,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
429,['Mo'],chen1980_1,chen,1980,[''],d,Mo_,Ev+0.33,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Mo_d_chen1980_1_1980_Ev+0.33,,,,,Figure 4,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
434,['Sc'],chen1980_1,chen,1980,[''],a,Sc_,Ev+0.2,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Sc_a_chen1980_1_1980_Ev+0.2,,,,,Review paper. assumed to be disordered states,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
1249,['Ce'],chen1980,chen,1980,[''],a,Ce_,Ec-0.5,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ce_a_chen1980_1980_Ec-0.5,,,,,,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
996,['Cs'],chen1980_3,chen,1980,[''],d,Cs_,Ev+0.5,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"review, lifetime",Cs_d_chen1980_3_1980_Ev+0.5,,,,,an implant of 10 13 Cs atoms per cm2 and subsequent anneal resulting in a lifetime reduction of 10-5 diffusion.,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
1231,['Ni'],chen1980,chen,1980,[''],a,Ni_,Ec-0.375,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ni_a_chen1980_1980_Ec-0.375,,,,,,,,,,,,,,,,,,,,,,,0.035,,,,,,,,,,,,,
539,['Ru'],chen1980,chen,1980,[''],a,Ru_,Ec-0.2,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Ru_a_chen1980_1980_Ec-0.2,,,,,"At 77K, different crystal site from the other Ru defect by chen1980",,,,,,,,,,,,,4.45E-15,,8.00E-16,,,0.02,,,,,Ru_i_a.srh,,,,,,,,
544,['Hg'],chen1980,chen,1980,[''],a,Hg_,Ec-0.31,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Hg_a_chen1980_1980_Ec-0.31,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
545,['Hg'],chen1980_1,chen,1980,[''],a,Hg_,Ec-0.36,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Hg_a_chen1980_1_1980_Ec-0.36,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1252,['Nd'],chen1980,chen,1980,[''],d,Nd_,Ec-0.33,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Nd_d_chen1980_1980_Ec-0.33,,,,,,,,,ion implantation,,,,,,,,,,,,,,0.07,,,,,,,,,,,,,
547,['Hg'],chen1980_1,chen,1980,[''],,Hg_,Ev+0.35,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Hg__chen1980_1_1980_Ev+0.35,,,,,,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
550,['Hg'],chen1980,chen,1980,[''],d,Hg_,Ev+0.33,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Hg_d_chen1980_1980_Ev+0.33,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1239,['Ni'],chen1980,chen,1980,[''],aa,Ni_,Ev+0.22,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ni_aa_chen1980_1980_Ev+0.22,,,,,,,,,,,,,,,,,,,,,,,0.01,,,,,,,,,,,,,
604,['Y'],chen1980,chen,1980,[''],d,Y_,Ec-0.5,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Y_d_chen1980_1980_Ec-0.5,,,,,Review paper. assumed to be disordered states,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
605,['N'],chen1980,chen,1980,[''],d,N_,Ec-0.142,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,N_d_chen1980_1980_Ec-0.142,,,,,,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
606,['N'],chen1980_1,chen,1980,[''],d,N_,Ec-0.23,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,N_d_chen1980_1_1980_Ec-0.23,,,,,,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
620,['N'],chen1980,chen,1980,[''],a,N_,Ec-0.039,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,N_a_chen1980_1980_Ec-0.039,,,,,,,,,ion implantation,,,,,,,,,,,,,,0.006,,,,,,,,,,,,,
623,['Os'],chen1980,chen,1980,[''],a,Os_,Ec-0.53,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Os_a_chen1980_1980_Ec-0.53,,,,,Determined to be eleementary osmium by the diffusion coefficient,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
854,['Co'],chen1980,chen,1980,['i'],d,Co_i,Ec-0.37,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Co_id_chen1980_1980_Ec-0.37,,,,,,,,,,,,,,,,,,,,1.00E-14,,,,,,,,,,,,,,,,
847,['Co'],chen1980,chen,1980,['s'],a,Co_s,Ec-0.535,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Co_sa_chen1980_1980_Ec-0.535,,,,,Electron capture cross section goes as T^[-0.1+-0.7),,,,,,,,,,,,,,,,,,0.013000000000000001,,,,,,,,,,,,,
840,['Co'],chen1980,chen,1980,['s'],d,Co_s,Ev+0.384,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Co_sd_chen1980_1980_Ev+0.384,,,,,Hole capture cross section goes as T^(-2.5+-0.4),,,,,,,,,,,,,,,,,,0.005,,,,,,,,,,,,,
535,['Ru'],chen1980,chen,1980,[''],d,Ru_,Ec-0.44,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Ru_d_chen1980_1980_Ec-0.44,,,,,"At 77K, different crystal site from the other Ru defect by chen1980",,,,,,,,,,,,,1.05E-14,,1.20E-15,,,0.01,,,,,,,,,,,,,
523,['Pt'],chen1980,chen,1980,[''],d,Pt_,Ev+0.32,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Pt_d_chen1980_1980_Ev+0.32,,,,,,,,,,,,,,,,,,1.62E-15,,1.56E-15,,,,,,,,Pt_s_d.srh,,,,,,,,
551,['Hg'],chen1980_1,chen,1980,[''],d,Hg_,Ev+0.25,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Hg_d_chen1980_1_1980_Ev+0.25,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
499,['Ti'],chen1980,chen,1980,[''],a,Ti_,Ev+0.27,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Ti_a_chen1980_1980_Ev+0.27,,,,,Review paper.,,,,,,,,,,,,,,,,,,,,,,,Ti_i_a.srh,,,,,,,,
516,['Pt'],chen1980,chen,1980,[''],a,Pt_,Ec-0.23,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,Pt_a_chen1980_1980_Ec-0.23,,,,,,,,,,,,,,,,,,5.15E-15,,6.30E-15,,,,,,,,Pt_s_a.srh,,,,,,,,
903,['Au'],brotherton1980,brotherton,1980,['s'],d,Au_s,None,Electron and Hole Capture at Au and Pt Centers in Silicon,10.1103/PhysRevLett.44.606,DLTS-Cr,Au_sd_brotherton1980_1980_None,Ev+0.340,,,,,,,boron,thermal,,,,,1000,,,,1.1e-14,,,,,,,,,,,,,,,,,,
1182,['Pd'],chen1980,chen,1980,['s'],a,Pd_s,Ec-0.22,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Pd_sa_chen1980_1980_Ec-0.22,,,,,Assumed thermal velocity of 2e7,,,,,,,,,,,,,,,0.0000000027/2e7,,,,,,,,,,,,,,,,
1166,['W'],chen1980,chen,1980,[''],aaa,W_,Ec-0.37,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,W_aaa_chen1980_1980_Ec-0.37,,,,,Figure 4,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1144,['Nb'],davis1980,davis,1980,[''],,Nb_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Nb__davis1980_1980_None,Ev+0.12,,,,,,CZ,"boron, phosphorus",melt,,3.6e-14,0.02,,,,,,,,,,,,,,,,,,,,,,,,
1142,['Nb'],chen1980_1,chen,1980,[''],d,Nb_,Ec-0.6,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Nb_d_chen1980_1_1980_Ec-0.6,,,,,Review paper.,,,,,,,,,,,,,,,,,,,,,,,Nb_i_d.srh,,,,,,,,
1154,['W'],chen1980,chen,1980,[''],aa,W_,Ec-0.30,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,W_aa_chen1980_1980_Ec-0.30,,,,,Figure 4,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1140,['Th'],chen1980,chen,1980,[''],d,Th_,Ec-0.29,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Th_d_chen1980_1980_Ec-0.29,,,,,,,,,ion implantation,,,,,,,,,,,,,,,,,,,,,,,,,,,
1169,['W'],chen1980,chen,1980,[''],a,W_,Ec-0.22,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,review,W_a_chen1980_1980_Ec-0.22,,,,,Figure 4,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
472,['Ti'],chen1980,chen,1980,[''],d,Ti_,None,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,"DLTS-Cr, Hall",Ti_d_chen1980_1980_None,,Ec-0.23,0.02,,Review paper.,,,,"ion implantation, thermal",,,,,,,,,,,,,,,,,,,Ti_i_d.srh,,,,,,,,
887,['Au'],lang1980_a,lang,1980,['s'],a,Au_s,Ec-0.553 + 3.87 *k *T,Complex nature of gold-related deep levels in silicon,10.1103/PhysRevB.22.3917,DLTS-Cr,Au_sa_lang1980_a_1980_Ec-0.553 + 3.87 *k *T,,Ec-0.553,,,Said that the difference defect between the two values maybe the results (lang1980 and lang1980a) of a different defect.,,,,,,,,,,,,,,,0.69e-16*T**0,,,,,,,,,,,,,,,,
855,['Co'],chen1980_1,chen,1980,['i'],d,Co_i,Ec-0.022,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Co_id_chen1980_1_1980_Ec-0.022,,,,,,,,,,,,,,,,,,,1.5e-13,2.50E-13,,,,,,,,,,,,,,,,
485,['Ti'],davis1980_1,davis,1980,[''],,Ti_,None,Impurities in silicon solar cells,10.1109/T-ED.1980.19922,"DLTS, SCP",Ti__davis1980_1_1980_None,Ec-0.26,,,,,,CZ,"boron, phosphorus",melt,,,0.02,,,,,,,,,,,,,,,,,,,,,,,,
1141,['Nb'],chen1980,chen,1980,[''],d,Nb_,Ec-0.4,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Nb_d_chen1980_1980_Ec-0.4,,,,,"Review paper. This maybe Ev+0.4, it is written in two different locations differently.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1185,['Pd'],chen1980,chen,1980,[''],a,Pd_,Ev+0.325,Energy Levels in Silicon,10.1146/annurev.ms.10.080180.001105,,Pd_a_chen1980_1980_Ev+0.325,,,,,Assumed thermal velocity of 1.7e7,,,,,,,,,,,,,0.000000075/1.7e7,,,,,0.005,,,,,,,,,,,,,
17,"['Fe', 'O']",wunstel1981,wunstel,1981,"['', '']",,Fe_O_,None,Iron-related deep levels in silicon,10.1016/0038-1098(81)90116-2,DLTS,Fe_O__wunstel1981_1981_None,Ev+0.33,,,,,,FZ,boron,thermal,,,,,0.3-100,,,,,,,,,,,,,,,,,,,,,,
643,['Mn'],lemke1981a,lemke,1981,[''],dd,Mn_,None,Eigensehaften der Dotierungsniveaus von Mangan und Vanadium in Silizium,10.1002/pssa.2210640219,"DLTS-Cr, TS-C",Mn_dd_lemke1981a_1981_None,Ev+0.34,Ev+0.27,,,Fitted sigma_h from figure 5. Assumed thermal velocity of 1e7,,,boron,diffusion,,,,,,,,,3.67e-27*T**(3.8),,,,,,,,,,Mn_s_dd.srh,,,,,,,,
1076,['Fe'],wunstel1981,wunstel,1981,['i'],d,Fe_i,None,Iron-related deep levels in silicon,10.1016/0038-1098(81)90116-2,DLTS-Cr,Fe_id_wunstel1981_1981_None,Ev+0.43,Ev+0.39,,,,,FZ,boron,thermal,,,,,0.3-100,,,,,,,,,,,,,,,,,,,,,,
154,"['Al', 'Fe']",graff1981a,graff,1981,"['', '']",,Al_Fe_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Al_Fe__graff1981a_1981_None,,Ev+0.21,,,,,"FZ, CZ",phosphorus,thermal,,,,,1-100,,,,,,,,,,,,,0091-391X,FeAl_i-s_d.srh,,,,,,,,
1096,['Fe'],graff1981a,graff,1981,[''],d,Fe_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Fe_d_graff1981a_1981_None,,Ev+0.383,,,,,"FZ, CZ",boron,thermal,,,,,1-100,,,,2.0e-16*exp(-0.086/kT) / exp(-0.086/k/265),,,,,,,,,0091-391X,Fe_i_d.srh,,,,,,,,
1074,['Fe'],graff1981,graff,1981,['i'],d,Fe_i,None,The Properties of Iron in Silicon,10.1149/1.2127478,"DLTS, FTIR",Fe_id_graff1981_1981_None,Ev+0.43,,,,"FTIR at 25 K, No Fe peak found. Rate measured at 260 K",,"CZ, FZ","aluminium, boron, phosphorus",thermal,,,,0.0014,1-100,,,,,,,,,,,,,,,,,,,,,,
57,['V'],graff1981a,graff,1981,[''],dd,V_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,V_dd_graff1981a_1981_None,,Ev+0.289,,,,,"FZ, CZ",boron,thermal,,,,,1-100,,,,4.1e-18*exp(-0.208/kT)/exp(-0.208/k/275),,,,,,,,,0091-391X,V_i_dd.srh,,,,,,,,
642,['Mn'],graff1981a,graff,1981,[''],dd,Mn_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Mn_dd_graff1981a_1981_None,,Ev+0.234,,,,,"FZ, CZ",phosphorus,thermal,,,,,1-100,,,,5.4e-18*exp(-0.069/kT)/exp(-0.069/k/225),,,,,,,,,0091-391X,Mn_i_dd.srh,,,,,,,,
54,['V'],graff1981a,graff,1981,[''],d,V_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,V_d_graff1981a_1981_None,Ec-0.46,,,,,,"FZ, CZ",phosphorus,thermal,,5e-13,,,1-100,,,,,,,,,,,,5e-13,0091-391X,V_i_d.srh,,,,,,,,
667,['Mn'],graff1981a,graff,1981,[''],a,Mn_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Mn_a_graff1981a_1981_None,,Ec-0.1,,,,,"FZ, CZ",phosphorus,thermal,,2e-14,,,1-100,,,,,,,,,,,,1e-14,0091-391X,Mn_i_a.srh,,,,,,,,
58,['V'],lemke1981a,lemke,1981,[''],dd,V_,None,Eigensehaften der Dotierungsniveaus von Mangan und Vanadium in Silizium,10.1002/pssa.2210640219,"DLTS-Cr, TS-C",V_dd_lemke1981a_1981_None,Ev+0.47,Ev+0.31,,,"Provides the capture cross section for holes at 90 K, assumed thermal velocity of 1e7.",,,boron,diffusion,,,,,,,,,9.93e-22 * exp(0.0287 * T),,,,,,,,,,V_i_dd.srh,,1e-13,,,,,,
408,['Ag'],graff1981a_1,graff,1981,[''],,Ag_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Ag__graff1981a_1_1981_None,,Ev+0.36,,,,,"FZ, CZ",boron,thermal,3.6e-16,,,,1-100,,,,,,,,,,,,,0091-391X,Ag_s_d.srh,,,,,,,,
682,['Mn'],graff1981a,graff,1981,[''],d,Mn_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Mn_d_graff1981a_1981_None,Ec-0.419,,,,,,"FZ, CZ",phosphorus,thermal,,1.3e-13,,,1-100,,,,,,,,,,,,,0091-391X,Mn_i_d.srh,,,,,,,,
407,['Ag'],graff1981a,graff,1981,[''],,Ag_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Ag__graff1981a_1981_None,,Ev+0.085,,,,,"FZ, CZ",boron,thermal,3.5e-16,,,,1-100,,,,,,,,,,,,,0091-391X,,,,,,,,,
55,['V'],lemke1981a,lemke,1981,[''],d,V_,None,Eigensehaften der Dotierungsniveaus von Mangan und Vanadium in Silizium,10.1002/pssa.2210640219,"DLTS, TS-C",V_d_lemke1981a_1981_None,Ec-0.43,,,,Assumeed thermal velocity of 1e7,,,boron,diffusion,,1E-16,,,,,,,,,,,,,,,,,V_i_d.srh,,,,,,,,
683,['Mn'],lemke1981a,lemke,1981,[''],d,Mn_,None,Eigensehaften der Dotierungsniveaus von Mangan und Vanadium in Silizium,10.1002/pssa.2210640219,"DLTS, TS-C",Mn_d_lemke1981a_1981_None,Ec-0.42,,,,Assumed thermal velocity of 1e7,,,boron,diffusion,,1E-16,,,,,,,,,,,,,,,,,Mn_i_d.srh,,,,,,,,
691,['Cr'],feichtinger1981,feichtinger,1981,['i'],d,Cr_i,None,Energy levels and solubility of interstitial chromium in silicon,10.1063/1.92856,"Hall, EPR",Cr_id_feichtinger1981_1981_None,Ec-0.222,,,,,,CZ,boron,thermal,,,0.05,,,,,,,,,,,,,,,,,,,,,,,,
473,['Ti'],graff1981a,graff,1981,[''],d,Ti_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Ti_d_graff1981a_1981_None,,Ev+0.245,,,,,"FZ, CZ",boron,thermal,,,,,1-100,,,,4.4e-17*exp(-0.057/kT)/exp(-0.057/k/205),,,,,,,,,0091-391X,Ti_i_dd.srh,,,,,,,,
1225,['Ni'],graff1981a,graff,1981,[''],d,Ni_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Ni_d_graff1981a_1981_None,,Ev+0.152,,,,,"FZ, CZ",boron,thermal,,,,,1-100,,,,2.7e-17*exp(0),,,,,,,,,0091-391X,Ni_s_d.srh,,,,,,,,
875,['Au'],graff1981a,graff,1981,[''],d,Au_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Au_d_graff1981a_1981_None,,Ev+0.35,,,,,"FZ, CZ",boron,thermal,2e-14,,,,1-100,,,,,,,,,,,,,0091-391X,Au_s_d.srh,,,,,,,,
652,"['B', 'Mn']",lemke1981a,lemke,1981,"['s', 'i']",d,B_sMn_i,None,Eigensehaften der Dotierungsniveaus von Mangan und Vanadium in Silizium,10.1002/pssa.2210640219,"DLTS, TS-C",B_sMn_id_lemke1981a_1981_None,Ec-0.55,,,,Assumeed thermal velocity of 1e7,,,boron,diffusion,,1E-21,,,,,,,,,,,,,,,,,,,,,,,,,
121,"['Al', 'Fe']",graff1981,graff,1981,"['s', 'i']",d,Al_sFe_i,None,The Properties of Iron in Silicon,10.1149/1.2127478,"DLTS, FTIR",Al_sFe_id_graff1981_1981_None,Ev+0.13,,,,"FTIR at 25 K, No AlFe peak found",,"CZ, FZ","aluminium, boron, phosphorus",thermal,,,,,1-100,,,,,,,,,,,,,,,,,,,,,,
741,"['B', 'Fe']",graff1981,graff,1981,"['s', 'i']",d,B_sFe_i,None,The Properties of Iron in Silicon,10.1149/1.2127478,"DLTS, FTIR",B_sFe_id_graff1981_1981_None,Ev+0.1,,,,"FTIR at 25 K, No AlFe peak found",,"CZ, FZ","aluminium, boron, phosphorus",thermal,,,,,1-100,,,,,,,,,,,,,,,,,,,,,,
62,['V'],lemke1981a,lemke,1981,[''],a,V_,None,Eigensehaften der Dotierungsniveaus von Mangan und Vanadium in Silizium,10.1002/pssa.2210640219,"DLTS, TS-C",V_a_lemke1981a_1981_None,Ec-0.18,,,,Assumeed thermal velocity of 1e7,,,boron,diffusion,,2E-16,,,,,,,,,,,,,,,,,V_i_a.srh,,,,,,,,
716,['Cr'],graff1981a,graff,1981,[''],d,Cr_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Cr_d_graff1981a_1981_None,,Ec-0.2,,,,,"FZ, CZ",phosphorus,thermal,,1.1e-12,,,1-100,,,,,,,,,,,,9e-13,0091-391X,Cr_i_d.srh,,,,,,,,
967,['Zn'],sah1981,sah,1981,['s'],aa,Zn_s,None,Effect of zinc impurity on silicon solar-cell efficiency,10.1109/T-ED.1981.20333,"TS-I, DLTS-Cr",Zn_saa_sah1981_1981_None,Ev+0.664,,,,"Capture rate at 300 K, energy levels and capture cross sections not provided, these are calculated.",,,boron,thermal,,,0.001,5.36e12*(T/300)**(-2) * exp(-0.644/kT),,,,,3.55e-15,,9.6e-20,,,,,,,,,3.7e-10 * exp(-0.136/kT),6e-8,,,,,,True
732,"['B', 'Cr']",graff1981a,graff,1981,"['', '']",,B_Cr_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,B_Cr__graff1981a_1981_None,,Ev+0.29,,,,,"FZ, CZ",boron,thermal,8e-19,,,,1-100,,,,,,,,,,,,,0091-391X,BCr_s-i_d.srh,,,,,,,,
736,"['B', 'Fe']",graff1981a,graff,1981,"['', '']",d,B_Fe_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,B_Fe_d_graff1981a_1981_None,,Ev+0.106,,,,,"FZ, CZ",boron,thermal,1.5e-13,,,,1-100,,,,,,,,,,,,,0091-391X,FeB_i-s_d.srh,,,,,,,,
1075,['Fe'],lemke1981,lemke,1981,['i'],d,Fe_i,None,Dotierungseigenschaften von Eisen in Silizium,10.1002/pssa.2210640123,"DLTS-CrMe, TS-C",Fe_id_lemke1981_1981_None,Ev+0.43,Ev+0.39,,,"Capture cross sections manually extracted from figure, rates from digitisation of figure 10.",,,,,,,,2121999 * T**2 * exp(-0.435/kT),,,,,7.86e-20*exp(0.0221*T)+1.78e-17,,1.03e-10*T**(-1.506),,,,,,,,,,,,,,,,
954,['Zn'],sah1981,sah,1981,['s'],a,Zn_s,Ei-0.271,Effect of zinc impurity on silicon solar-cell efficiency,10.1109/T-ED.1981.20333,"TS-I, DLTS-Cr",Zn_sa_sah1981_1981_Ei-0.271,Ev+0.297,,,,"Capture rate at 300 K, energy levels and capture cross sections not provided, these are calculated.",,,boron,thermal,,,0.001,7.4e12 * (T/300)**(-1)* exp(-0.326/kT),,,,,2.97e-15,,1.125e-15,,,,,,,,,2.25e-08,5e-8,,,,,,
750,"['B', 'Fe']",graff1981,graff,1981,"['s', 'i']",a,B_sFe_i,None,The Properties of Iron in Silicon,10.1149/1.2127478,"DLTS, FTIR",B_sFe_ia_graff1981_1981_None,Ev+0.6,,,,"FTIR at 25 K, No FeB peak found",,"CZ, FZ","aluminium, boron, phosphorus",thermal,,,,,1-100,5.0,,,,,,,70 ms,,,,,,,,,,,,,,
19,['O'],kimerling1981,kimerling,1981,['p'],,O_p,None,Oxygen_related donor states in silicon,10.1063/1.92755,DLTS,O_p_kimerling1981_1981_None,Ec-0.15,,,,"80K Thermal donor state 2.Heat treatments were performed at 450 C in flowing N2 for various durations: 30 min, 1 h, 2 h, 5 h.",,CZ,"boron, phosphorus",,,,,,1-10,,,,,,,,,,,,,,,,,,,,,,
751,"['B', 'Fe']",lemke1981,lemke,1981,"['s', 'i']",a,B_sFe_i,None,Dotierungseigenschaften von Eisen in Silizium,10.1002/pssa.2210640123,"DLTS-CrMe, TS-C",B_sFe_ia_lemke1981_1981_None,,Ec-0.23,,,Capture cross sections manually extracted from figure,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
164,"['Al', 'Fe']",graff1981,graff,1981,"['s', 'i']",dd,Al_sFe_i,None,The Properties of Iron in Silicon,10.1149/1.2127478,"DLTS, FTIR",Al_sFe_idd_graff1981_1981_None,Ev+0.21,,,,"FTIR at 25 K, No AlFe peak found",,"CZ, FZ","aluminium, boron, phosphorus",thermal,,,,,1-100,,,,,,,,,,,,,,,,,,,,,,
61,['V'],graff1981a,graff,1981,[''],a,V_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,V_a_graff1981a_1981_None,,Ec-0.154,,,,,"FZ, CZ",phosphorus,thermal,,2.6e-16,,,1-100,,,,,,,,,,,,,0091-391X,V_i_a.srh,,,,,,,,
159,"['Al', 'B']",graff1981,graff,1981,"['i', 's']",d,Al_iB_s,None,The Properties of Iron in Silicon,10.1149/1.2127478,"DLTS-D, LS, FTIR",Al_iB_sd_graff1981_1981_None,Ev+0.13,,,,,,"CZ,FZ",aluminium,thermal,,,,,1-100,5.0,,,,,,,70 ms,,,,,,,,,,,,,,
149,"['Al', 'B']",graff1981,graff,1981,"['i', 's']",a,Al_iB_s,None,The Properties of Iron in Silicon,10.1149/1.2127478,"DLTS-D, LS, FTIR",Al_iB_sa_graff1981_1981_None,Ev+0.21,,,,,,"CZ,FZ",aluminium,thermal,,,,,1-100,5.0,,,,,,,70 ms,,,,,,,,,,,,,,
487,['Ti'],graff1981a_1,graff,1981,[''],,Ti_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Ti__graff1981a_1_1981_None,,Ec-0.079,,,,,"FZ, CZ",phosphorus,thermal,,5.1e-14,,,1-100,,,,,,,,,,,,,0091-391X,Ti_i_a.srh,,,,,,,,
486,['Ti'],graff1981a,graff,1981,[''],,Ti_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Ti__graff1981a_1981_None,,Ec-0.32,,,,,"FZ, CZ",phosphorus,thermal,,4.5e-13,,,1-100,,,,,,,,,,,,2.5e-13,0091-391X,Ti_i_d.srh,,,,,,,,
265,['Cu'],graff1981a,graff,1981,[''],d,Cu_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Cu_d_graff1981a_1981_None,,Ev+0.102,,,,,"FZ, CZ",boron,thermal,,,,,1-100,,,,2.1e-13*exp(0),,,,,,,,,0091-391X,CuCu_i-s_d.srh,,,,,,,,
864,['Au'],graff1981a,graff,1981,[''],a,Au_,None,The behavior of transition and noble metals in silicon crystals,,DLTS-Cr,Au_a_graff1981a_1981_None,,Ec-0.54,,,,,"FZ, CZ",phosphorus,thermal,,4e-16,,,1-100,,,,,,,,,,,,,0091-391X,Au_s_a.srh,,,,,,,,
20,['O'],kimerling1981_1,kimerling,1981,['p'],,O_p,None,Oxygen_related donor states in silicon,10.1063/1.92755,DLTS,O_p_kimerling1981_1_1981_None,Ec-0.07,,,,"30K Thermal donor state 2.Heat treatments were performed at 450 C in flowing N2 for various durations: 30 min, 1 h, 2 h, 5 h.",,CZ,"boron, phosphorus",,,,,,1-10,,,,,,,,,,,,,,,,,,,,,,
369,['Si'],kveder1982_5,kveder,1982,['d'],,Si_d,None,On the Energy Spectrum of Dislocations in Silicon,10.1002/pssa.2210720233,DLTS-Cr,Si_d_kveder1982_5_1982_None,,Ev+0.39,,,Instead of transient a log behaviour is observed with time. This is expected to arrise from the charge on a disslocation.,,FZ,boron,deformation,,,,,1,,,,,,,,,,,,,,,,,,,,,,
904,['Au'],benton1982_1,benton,1982,['s'],d,Au_s,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Au_sd_benton1982_1_1982_None,Ev+0.35,,,,"Emission rate at 1.8 ms at 173 K, quenched",,FZ,,,9.999999999999999e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
1048,['Fe'],benton1982_3,benton,1982,[''],,Fe_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Fe__benton1982_3_1982_None,Ev+0.23,,,,"Emission rate at 1.8 ms at 184 K, slowly cooled",,FZ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
80,"['P', 'Si']",brotherton1982,brotherton,1982,"['', 'v']",d,P_Si_v,None,Defect production and lifetime control in electron and γ-irradiated silicon,10.1063/1.331460,DLTS-Cr,P_Si_vd_brotherton1982_1982_None,Ec-0.456,Ec-0.456,,,"E centre, out at 420 K for 30 min. measurement data taken from laplace DLTS database.",,FZ,phosphorus,irridation,,,,,60,,"191.7,209.1,229.8,254.8","1,10,100,1000",,2.00E-16,3.70E-15,,,,,,,,,,,,,,,,
1014,['Unknown'],benton1982,benton,1982,[''],,Unknown_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Unknown__benton1982_1982_None,Ec-0.15,,,,"Emission rate at 1.8 ms at 112 K, From heat treatments",,CZ,,,,2e-16,,,,,,,,,,,,,,,,,,,,,,,,,
38,['O'],benton1982,benton,1982,[''],d,O_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,O_d_benton1982_1982_None,Ec-0.07,,,,"Emission rate at 1.8 ms at 58 K, ",,CZ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
27,"['O', 'Si']",benton1982,benton,1982,"['', 'v']",,O_Si_v,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,O_Si_v_benton1982_1982_None,Ec-0.18,,,,"Emission rate at 1.8 ms at 139 K, Irradiated with 1 Mev",,CZ,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,
1046,['Fe'],benton1982_1,benton,1982,[''],,Fe_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Fe__benton1982_1_1982_None,Ec-0.21,,,,"Emission rate at 1.8 ms at 208 K, slowly cooled",,FZ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1015,['Unknown'],benton1982_1,benton,1982,[''],,Unknown_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Unknown__benton1982_1_1982_None,Ec-0.22,,,,"Emission rate at 1.8 ms at 228 K, From heat treatments",,Cz,,,,7e-16,,,,,,,,,,,,,,,,,,,,,,,,,
1049,['Fe'],benton1982_4,benton,1982,[''],,Fe_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Fe__benton1982_4_1982_None,Ec-0.35,,,,"Emission rate at 1.8 ms at 170 K, quenched",,CZ,,,,5e-15,,,,,,,,,,,,,,,,,,,,,,,,,
888,['Au'],benton1982,benton,1982,['s'],a,Au_s,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Au_sa_benton1982_1982_None,Ec-0.53,,,,"Emission rate at 1.8 ms at 288 K, quenched",,FZ,,,,2e-16,,,,,,,,,,,,,,,,,,,,,,,,,
1016,['Unknown'],benton1982_2,benton,1982,[''],,Unknown_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Unknown__benton1982_2_1982_None,Ec-0.47,,,,"Emission rate at 1.8 ms at 115 K,  From laser doping",,CZ,,,,5e-16,,,,,,,,,,,,,,,,,,,,,,,,,
81,"['P', 'Si']",benton1982,benton,1982,"['v', '']",,P_vSi_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,P_vSi__benton1982_1982_None,Ec-0.44,,,,"Emission rate at 1.8 ms at 204 K, Irradiated with 1 Mev",,"FZ,CZ",,,,1e-16,,,,,,,,,,,,,,,,,,,,,,,,,
905,['Au'],wu1982,wu,1982,['s'],d,Au_s,None,Capture cross sections of the gold donor and acceptor states in n-type Czochralski silicon,10.1016/0038-1101(82)90066-1,DLTS-CrMo,Au_sd_wu1982_1982_None,,,,,"100-200 K, Lists issues when comparing different publications, including the same technique from the year before,",,CZ,phosphorus,diffusion,,,,,3-50,,,,3.5e-15,2e-16,1.1e-15*(T/158)**(-2),,,,,,,,,,,,,,,8e-16,
39,['O'],benton1982_1,benton,1982,[''],d,O_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,O_d_benton1982_1_1982_None,Ec-0.15,,,,"Emission rate at 1.8 ms at 59,60 K, ",,CZ,,,,3e-15,,,,,,,,,,,,,,,,,,,,,,,,,
1019,['Unknown'],benton1982_5,benton,1982,[''],,Unknown_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Unknown__benton1982_5_1982_None,Ev+0.36,,,,"Emission rate at 1.8 ms at 98 K, quenched,  From laser doping",,"FZ,CZ",,,,,,,,,,,,,,,,,,,,,,,,,,,,,
400,['Ag'],benton1982,benton,1982,[''],a,Ag_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Ag_a_benton1982_1982_None,Ec-0.51,,,,"Emission rate at 1.8 ms at 286 K, quenched",,FZ,,,,1e-16,,,,,,,,,,,,,,,,,,,,,,,,,
306,"['Si', 'Si']",mukashev1982,mukashev,1982,"['v', 'v']",d,Si_vSi_v,None,Studies of radiation defects in hydrogen implanted silicon by deep level transient spectroscopy,10.1080/00337578208229928,DLTS,Si_vSi_vd_mukashev1982_1982_None,Ec-0.18,,,,measurement data taken from laplace DLTS database. Out at 623 for 10 min,,CZ,boron,irridation,,,0.015,,22,5.0,"87.8,96.7,107.6,121.1","1,10,100,1000",,,,,,,,,,,,,,,,,,,
1047,['Fe'],benton1982_2,benton,1982,[''],,Fe_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Fe__benton1982_2_1982_None,Ec-0.46,,,,"Emission rate at 1.8 ms at 299 K, slowly cooled",,FZ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1018,['Unknown'],benton1982_4,benton,1982,[''],,Unknown_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Unknown__benton1982_4_1982_None,Ec-0.345,,,,"Emission rate at 1.8 ms at 211 K, quenched,  From laser doping",,"FZ,CZ",,,,5e-16,0.015,,,,,,,,,,,,,,,,,,,,,,,,
368,['Si'],kveder1982_4,kveder,1982,['d'],,Si_d,None,On the Energy Spectrum of Dislocations in Silicon,10.1002/pssa.2210720233,DLTS-Cr,Si_d_kveder1982_4_1982_None,,Ev+0.25,,,Instead of transient a log behaviour is observed with time. This is expected to arrise from the charge on a disslocation.,,FZ,boron,deformation,,,,,1,,,,,,,,,,,,,,,,,,,,,,
367,['Si'],kveder1982_3,kveder,1982,['d'],,Si_d,None,On the Energy Spectrum of Dislocations in Silicon,10.1002/pssa.2210720233,DLTS-Cr,Si_d_kveder1982_3_1982_None,,Ec-0.6,,,Instead of transient a log behaviour is observed with time. This is expected to arrise from the charge on a disslocation.,,FZ,phosphorus,deformation,,,,,0.1,,,,,,,,,,,,,,,,,,,,,,
366,['Si'],kveder1982_2,kveder,1982,['d'],,Si_d,None,On the Energy Spectrum of Dislocations in Silicon,10.1002/pssa.2210720233,DLTS-Cr,Si_d_kveder1982_2_1982_None,,Ec-0.51,,,Instead of transient a log behaviour is observed with time. This is expected to arrise from the charge on a disslocation.,,FZ,phosphorus,deformation,,,,,0.1,,,,,,,,,,,,,,,,,,,,,,
365,['Si'],kveder1982_1,kveder,1982,['d'],,Si_d,None,On the Energy Spectrum of Dislocations in Silicon,10.1002/pssa.2210720233,DLTS-Cr,Si_d_kveder1982_1_1982_None,,Ec-0.37,,,Instead of transient a log behaviour is observed with time. This is expected to arrise from the charge on a disslocation.,,FZ,phosphorus,deformation,,,,,0.1,,,,,,,,,,,,,,,,,,,,,,
364,['Si'],kveder1982,kveder,1982,['d'],,Si_d,None,On the Energy Spectrum of Dislocations in Silicon,10.1002/pssa.2210720233,DLTS-Cr,Si_d_kveder1982_1982_None,,Ec-0.27,,,Instead of transient a log behaviour is observed with time. This is expected to arrise from the charge on a disslocation.,,FZ,phosphorus,deformation,,,,,0.1,,,,,,,,,,,,,,,,,,,,,,
1017,['Unknown'],benton1982_3,benton,1982,[''],,Unknown_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Unknown__benton1982_3_1982_None,Ec-0.19,,,,"Emission rate at 1.8 ms at 200 K, quenched, ,  From laser doping",,"FZ,CZ",,,,5e-19,,,,,,,,,,,,,,,,,,,,,,,,,
362,['Si'],benton1982,benton,1982,['d'],,Si_d,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Si_d_benton1982_1982_None,Ec-0.38,,,,"Emission rate at 1.8 ms at 206 K, ",,FZ,,,,1.4e-15,,,,,,,,,,,,,,,,,,,,,,,,,
1045,['Fe'],benton1982,benton,1982,[''],,Fe_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Fe__benton1982_1982_None,Ec-0.35,,,,"Emission rate at 1.8 ms at 181 K, quenched",,FZ,,,,6e-15,,,,,,,,,,,,,,,,,,,,,,,,,
360,"['Si', 'Si']",brotherton1982,brotherton,1982,"['v', 'v']",dd,Si_vSi_v,None,Defect production and lifetime control in electron and γ-irradiated silicon,10.1063/1.331460,DLTS-Cr,Si_vSi_vdd_brotherton1982_1982_None,Ec-0.246,Ec-0.23,,,Out at 625 K for 30 min. measurement data taken from laplace DLTS database.,,FZ,phosphorus,irridation,,,,,60,,"110.3,120.3,132.1,146.5","1,10,100,1000",,,3.4e-16*exp(-0.017/kT),,,,,,,,,,,,,,,,
370,['Si'],kveder1982_6,kveder,1982,['d'],,Si_d,None,On the Energy Spectrum of Dislocations in Silicon,10.1002/pssa.2210720233,DLTS-Cr,Si_d_kveder1982_6_1982_None,,Ev+0.4,,,Instead of transient a log behaviour is observed with time. This is expected to arrise from the charge on a disslocation.,,FZ,boron,deformation,,,,,1,,,,,,,,,,,,,,,,,,,,,,
889,['Au'],wu1982,wu,1982,['s'],a,Au_s,None,Capture cross sections of the gold donor and acceptor states in n-type Czochralski silicon,10.1016/0038-1101(82)90066-1,DLTS-CrMo,Au_sa_wu1982_1982_None,Ec-0.550,Ec-0.550,,,"80-200 K, Lists issues when comparing older values. These include when the trap concentration is too large, but also that there may have been different defects.",,CZ,phosphorus,diffusion,,,,,3-50,,,,0.9e-14 * (T/300)**(-1.3),2e-17,8.5e-17,,,,,,,,,,,,,,,0.2e-14 * (T/300)**(-1.3),
1052,['Fe'],benton1982_7,benton,1982,[''],,Fe_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Fe__benton1982_7_1982_None,Ev+0.47,,,,"Emission rate at 1.8 ms at 220 K, quenched",,CZ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
305,"['Si', 'Si']",brotherton1982,brotherton,1982,"['v', 'v']",d,Si_vSi_v,None,Defect production and lifetime control in electron and γ-irradiated silicon,10.1063/1.331460,DLTS-Cr,Si_vSi_vd_brotherton1982_1982_None,Ec-0.413,Ec-0.413,,,Out at 625 K for 30 min. measurement data taken from laplace DLTS database.,,FZ,phosphorus,irridation,,,,,60,,"188,205.8,227.2,253.3","1,10,100,1000",,2.00E-16,2.00E-15,,,,,,,,,,,,,,,,
290,['Cu'],benton1982,benton,1982,[''],,Cu_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Cu__benton1982_1982_None,Ev+0.22,,,,"Emission rate at 1.8 ms at 122 K, quenched",,FZ,,,6e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
363,['Si'],benton1982_1,benton,1982,['d'],,Si_d,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Si_d_benton1982_1_1982_None,Ev+0.35,,,,"Emission rate at 1.8 ms at 288 K, ",,FZ,,,5e-17,,,,,,,,,,,,,,,,,,,,,,,,,,
1050,['Fe'],benton1982_5,benton,1982,[''],,Fe_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Fe__benton1982_5_1982_None,Ev+0.30,,,,"Emission rate at 1.8 ms at 168 K, quenched",,CZ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1051,['Fe'],benton1982_6,benton,1982,[''],,Fe_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Fe__benton1982_6_1982_None,Ev+0.43,,,,"Emission rate at 1.8 ms at 237 K, quenched",,CZ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
387,['Ag'],benton1982_1,benton,1982,[''],d,Ag_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Ag_d_benton1982_1_1982_None,Ev+0.38,,,,"Emission rate at 1.8 ms at 184 K, quenched",,FZ,,,,,,,,,,,,,,,,,,,,,Ag_s_d.srh,,,,,,,,
1078,['Fe'],wunstel1982_1,wunstel,1982,['i'],d,Fe_i,None,Interstitial iron and iron-acceptor pairs in silicon,10.1007/BF00619081,DLTS-Cr,Fe_id_wunstel1982_1_1982_None,,Ev+0.39,0.02,,,,FZ,"aluminium, boron, gallium",thermal,,,,1.603e6*T**2*exp(-0.43/kT),0.3-100,,,,1.6e-16*exp(-0.043/k/T),,,,,,,,,,,,,,,,,,
1077,['Fe'],wunstel1982,wunstel,1982,['i'],d,Fe_i,None,Interstitial iron and iron-acceptor pairs in silicon,10.1007/BF00619081,Hall,Fe_id_wunstel1982_1982_None,,Ev+0.39,,,,,FZ,"aluminium, boron, gallium",thermal,,,,,0.3-100,,,,,,,,,,,,,,,,,,,,,,
314,"['Si', 'Si']",brotherton1982,brotherton,1982,"['v', 'v']",,Si_vSi_v,None,Defect production and lifetime control in electron and γ-irradiated silicon,10.1063/1.331460,DLTS,Si_vSi_v_brotherton1982_1982_None,Ec-0.346,,,,"In at 570 K, not sure what it is",,FZ,phosphorus,irridation,,4.60E-17,,,60,,,,,,,,,,,,,,,,,,,,,,
228,['C'],jellison1982,jellison,1982,[''],,C_,None,Transient capacitance studies of an electron trap at Ec-ET = 0.105 eV in phosphorus-doped silicon,10.1063/1.331459,"DLTS, EPR",C__jellison1982_1982_None,Ec-0.105,,,,Anneals out at 625 K.,,FZ,phosphorus,irradiation,,>1e-14,0.005,,10,,,,,,,,,,,,,,C_i_a.srh,,,,,,,,
122,"['Al', 'Fe']",wunstel1982,wunstel,1982,"['s', 'i']",d,Al_sFe_i,None,Interstitial iron and iron-acceptor pairs in silicon,10.1007/BF00619081,DLTS-Cr,Al_sFe_id_wunstel1982_1982_None,Ev+0.19,,,,,,FZ,aluminium,thermal,,,,,0.3-100,,,,,,,,,,,,,,,,,,,,,,
1210,['Ni'],benton1982,benton,1982,[''],,Ni_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Ni__benton1982_1982_None,Ec-0.43,,,,"Emission rate at 1.8 ms at 257 K, quenched",,FZ,,,,1e-16,,,,,,,,,,,,,,,,,,,,,,,,,
229,['C'],jellison1982_1,jellison,1982,[''],,C_,None,Transient capacitance studies of an electron trap at Ec-ET = 0.105 eV in phosphorus-doped silicon,10.1063/1.331459,"DLTS, EPR",C__jellison1982_1_1982_None,Ec-0.172,,,,Anneals out at 625 K.,,FZ,phosphorus,irradiation,,>1e-14,0.002,,10,,,,,,,,,,,,,,CC_i-s_a.srh,,,,,,,,
332,['Si'],mukashev1982,mukashev,1982,['i'],,Si_i,None,Studies of radiation defects in hydrogen implanted silicon by deep level transient spectroscopy,10.1080/00337578208229928,DLTS,Si_i_mukashev1982_1982_None,Ev+0.28,,,,measurement data taken from laplace DLTS database. Out at 673 for 10 min,,CZ,boron,irridation,,,0.015,,22,5.0,"122.1,132.8,145.5,160.7","1,10,100,1000",,,,,,,,,,,,,,,,,,,
312,"['Si', 'Si']",benton1982_1,benton,1982,"['v', 'v']",,Si_vSi_v,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Si_vSi_v_benton1982_1_1982_None,Ec-0.41,,,,"Emission rate at 1.8 ms at 123 K, Irradiated with 1 Mev",,"FZ,CZ",,,,3.9999999999999995e-15,,,,,,,,,,,,,,,,,,,,,,,,,
613,['N'],tokumaru1982,tokumaru,1982,[''],,N_,None,Deep Levels Associated with Nitrogen in Silicon,10.1143/JJAP.21.L443,DLTS,N__tokumaru1982_1982_None,Ec-0.19,,,,,,FZ,"boron, phosphorus",melt,,8e-17,,,"30,100",,,,,,,,,,,,,,,,,,,,,,
9,"['O', 'Si', 'Si']",mukashev1982,mukashev,1982,"['', 'v', 'v']",,O_Si_vSi_v,None,Studies of radiation defects in hydrogen implanted silicon by deep level transient spectroscopy,10.1080/00337578208229928,DLTS,O_Si_vSi_v_mukashev1982_1982_None,Ev+0.33,,,,measurement data taken from laplace DLTS database. Out at 673K for 10 min. A center,,CZ,boron,irridation,,,0.015,,22,5.0,"159.9,176,195.5,219.5","1,10,100,1000",,,,,,,,,,,,,,,,,,,
311,"['Si', 'Si']",benton1982,benton,1982,"['v', 'v']",,Si_vSi_v,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Si_vSi_v_benton1982_1982_None,Ec-0.23,,,,"Emission rate at 1.8 ms at 245 K, Irradiated with 1 Mev",,"FZ,CZ",,,,2e-16,,,,,,,,,,,,,,,,,,,,,,,,,
231,"['C', 'C']",benton1982,benton,1982,"['s', 'i']",,C_iC_s,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,C_iC_s_benton1982_1982_None,Ev+0.36,,,,"Emission rate at 1.8 ms at 225 K, ",,"FZ,CZ",,,8e-17,,,,,,,,,,,,,,,,,,,,,,,,,,
24,"['O', 'Si']",brotherton1982,brotherton,1982,"['', 'v']",d,O_Si_v,None,Defect production and lifetime control in electron and γ-irradiated silicon,10.1063/1.331460,DLTS-Cr,O_Si_vd_brotherton1982_1982_None,Ec-0.169,Ec-0.169,0.015,,"A center, Out at 570 for 30 min. measurement data taken from laplace DLTS database.",,FZ,phosphorus,irridation,,,0.015,,60,,"77,84.2,92.8,103.3","1,10,100,1000",,2.00E-15,1.00E-14,,,,,,,,,,,,,,,,
177,"['Fe', 'Ga']",wunstel1982,wunstel,1982,"['i', 's']",d,Fe_iGa_s,None,Interstitial iron and iron-acceptor pairs in silicon,10.1007/BF00619081,DLTS-Cr,Fe_iGa_sd_wunstel1982_1982_None,Ev+0.24,,,,Capture cross section at 300 K,,FZ,gallium,thermal,,,,,0.3-100,,,,,,,,,,,,,,,,,,,,,,
614,['N'],tokumaru1982_1,tokumaru,1982,[''],,N_,None,Deep Levels Associated with Nitrogen in Silicon,10.1143/JJAP.21.L443,DLTS,N__tokumaru1982_1_1982_None,Ec-0.28,,,,,,FZ,"boron, phosphorus",melt,,5e-16,,,"30,100",,,,,,,,,,,,,,,,,,,,,,
742,"['B', 'Fe']",wunstel1982,wunstel,1982,"['s', 'i']",d,B_sFe_i,None,Interstitial iron and iron-acceptor pairs in silicon,10.1007/BF00619081,Hall,B_sFe_id_wunstel1982_1982_None,Ev+0.09,,,,,,FZ,boron,thermal,,,,,0.3-100,,,,,,,,,,,,,,,,,,,,,,
1211,['Ni'],benton1982_1,benton,1982,[''],,Ni_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Ni__benton1982_1_1982_None,Ec-0.14,,,,"Emission rate at 1.8 ms at 88 K, quenched",,FZ,,,,3.9999999999999995e-15,,,,,,,,,,,,,,,,,,,,,,,,,
1020,['Unknown'],brotherton1982,brotherton,1982,[''],,Unknown_,None,Defect production and lifetime control in electron and γ-irradiated silicon,10.1063/1.331460,DLTS,Unknown__brotherton1982_1982_None,Ec-0.09,,,,Out at 550 K for 4.5 hours.,,FZ,phosphorus,irridation,,,0.015,,60,,,,,1e-13 * exp(-0.08/kT),5e-13 * exp(-0.08/kT),,,,,,,,,,,,,,,,
373,['Si'],kveder1982_9,kveder,1982,['d'],,Si_d,None,On the Energy Spectrum of Dislocations in Silicon,10.1002/pssa.2210720233,DLTS-Cr,Si_d_kveder1982_9_1982_None,,Ev+0.35,,,Instead of transient a log behaviour is observed with time. This is expected to arrise from the charge on a disslocation.,,FZ,boron,deformation,,,,,1,,,,,,,,,,,,,,,,,,,,,,
372,['Si'],kveder1982_8,kveder,1982,['d'],,Si_d,None,On the Energy Spectrum of Dislocations in Silicon,10.1002/pssa.2210720233,DLTS-Cr,Si_d_kveder1982_8_1982_None,,Ev+0.67,,,Instead of transient a log behaviour is observed with time. This is expected to arrise from the charge on a disslocation.,,FZ,boron,deformation,,,,,1,,,,,,,,,,,,,,,,,,,,,,
1021,['Unknown'],brotherton1982_1,brotherton,1982,[''],,Unknown_,None,Defect production and lifetime control in electron and γ-irradiated silicon,10.1063/1.331460,DLTS,Unknown__brotherton1982_1_1982_None,Ec-0.363,,,,In at 520 K,,FZ,phosphorus,irridation,,1.40E-15,,,60,,,,,,,,,,,,,,,,,,,,,,
313,"['Si', 'Si']",benton1982_2,benton,1982,"['v', 'v']",,Si_vSi_v,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Si_vSi_v_benton1982_2_1982_None,Ev+0.21,,,,"Emission rate at 1.8 ms at 237 K, Irradiated with 1 Mev",,"FZ,CZ",,,2e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
291,['Cu'],benton1982_1,benton,1982,[''],,Cu_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Cu__benton1982_1_1982_None,Ev+0.41,,,,"Emission rate at 1.8 ms at 242 K, quenched",,FZ,,,8e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
371,['Si'],kveder1982_7,kveder,1982,['d'],,Si_d,None,On the Energy Spectrum of Dislocations in Silicon,10.1002/pssa.2210720233,DLTS-Cr,Si_d_kveder1982_7_1982_None,,Ev+0.47,,,Instead of transient a log behaviour is observed with time. This is expected to arrise from the charge on a disslocation.,,FZ,boron,deformation,,,,,1,,,,,,,,,,,,,,,,,,,,,,
518,['Pt'],benton1982,benton,1982,[''],,Pt_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Pt__benton1982_1982_None,Ec-0.22,,,,"Emission rate at 1.8 ms at 114 K, quenched",,FZ,,,,9.999999999999999e-16,,,,,,,,,,,,,,,,,Pt_s_a.srh,,,,,,,,
519,['Pt'],benton1982_1,benton,1982,[''],,Pt_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Pt__benton1982_1_1982_None,Ec-0.30,,,,"Emission rate at 1.8 ms at 174 K, quenched",,FZ,,,,9.999999999999999e-16,,,,,,,,,,,,,,,,,,,,,,,,,
520,['Pt'],benton1982_2,benton,1982,[''],,Pt_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Pt__benton1982_2_1982_None,Ev+0.22,,,,"Emission rate at 1.8 ms at 87 K, quenched",,FZ,,,,,,,,,,,,,,,,,,,,,B_s_a.srh,,,,,,,,
677,['Mn'],benton1982_2,benton,1982,[''],,Mn_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Mn__benton1982_2_1982_None,Ec-0.41,,,,"Emission rate at 1.8 ms at 218 K, quenched",,,,,2e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
803,"['B', 'Fe']",benton1982,benton,1982,"['', '']",,B_Fe_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,B_Fe__benton1982_1982_None,Ev+0.10,,,,"Emission rate at 1.8 ms at 59 K, quenched",,FZ,,,3.9999999999999995e-15,,,,,,,,,,,,,,,,,,FeB_i-s_d.srh,,,,,,,,
676,['Mn'],benton1982_1,benton,1982,[''],,Mn_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Mn__benton1982_1_1982_None,Ec-0.11,,,,"Emission rate at 1.8 ms at 68 K, quenched",,,,,,1e-15,,,,,,,,,,,,,,,,,,,,,,,,,
743,"['B', 'Fe']",wunstel1982_1,wunstel,1982,"['s', 'i']",d,B_sFe_i,None,Interstitial iron and iron-acceptor pairs in silicon,10.1007/BF00619081,DLTS-Cr,B_sFe_id_wunstel1982_1_1982_None,Ev+0.1,,,,,,FZ,boron,thermal,,,,,0.3-100,,,,,,,,,,,,,,,,,,,,,,
675,['Mn'],benton1982,benton,1982,[''],,Mn_,None,Capacitance Transient Spectroscopy of Trace Contamination in Silicon,10.1149/1.2124387,DLTS,Mn__benton1982_1982_None,Ev+0.13,,,,"Emission rate at 1.8 ms at 81 K, quenched",,,,,5e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
694,['Cr'],weber1983,weber,1983,['i'],d,Cr_i,Ec-0.22,Transition metals in silicon,10.1007/BF00617708,review,Cr_id_weber1983_1983_Ec-0.22,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
702,"['B', 'Cr']",conzelmann1983,conzelmann,1983,"['s', 'i']",d,B_sCr_i,None,Chromium and chromium-boron pairs in silicon,10.1007/BF00620536,"DLTS, NA, sPL, EPR",B_sCr_id_conzelmann1983_1983_None,Ev+0.28,,,,"no thermal velocity was provided, it was assumed a thermal velocity of 2.046e7.",,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,2e-15,,
703,"['B', 'Cr']",weber1983,weber,1983,"['s', 'i']",d,B_sCr_i,Ev+0.28,Transition metals in silicon,10.1007/BF00617708,review,B_sCr_id_weber1983_1983_Ev+0.28,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
733,"['B', 'Cr']",conzelmann1983,conzelmann,1983,"['', '']",,B_Cr_,None,Chromium and chromium-boron pairs in silicon,10.1007/BF00620536,"DLTS, EPR, luminescence",B_Cr__conzelmann1983_1983_None,Ev+0.28,,,,,,"CZ,FZ",boron,thermal,1e-14,,,,May-00,,,,,,,,,,,,,,BCr_s-i_d.srh,,,,,,,,
1054,['Fe'],tavendale1983_1,tavendale,1983,[''],,Fe_,None,"Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel",10.1088/0022-3719/16/9/011,DLTS-Cr,Fe__tavendale1983_1_1983_None,Ev+0.40,,,,,,FZ,boron,,,,,,20,,,,1e-18,,,,,,,,,,,,,,,,,,
1159,['W'],lemke1983,lemke,1983,[''],d,W_,None,Über die chemische Natur von Rekombinationszentren in Si-Leistungsbauelementen,10.1002/pssa.2210760265,DLTS,W_d_lemke1983_1983_None,,Ev+0.39,,,,,FZ,boron,,6.3e-1/1e7/1e8,,,1.05e6*T**2*exp(-0.376/kT),,,,,,,,,,,,,,,,,,,,,,,
693,['Cr'],kunio1983,kunio,1983,['i'],d,Cr_i,None,Defect levels in chromium-doped silicon,10.1016/0038-1101(83)90117-X,DLTS-Cr,Cr_id_kunio1983_1983_None,Ec-0.2,Ec-0.2,,,Two samples showed larger difference in measurements. Measured at 90 K.,,,,,,,,,,,,,,,1e-14,,,,,,,,,,,1.92e7*T**2*exp(-0.2/kT),,,,,
66,['V'],weber1983,weber,1983,['i'],d,V_i,Ec-0.45,Transition metals in silicon,10.1007/BF00617708,review,V_id_weber1983_1983_Ec-0.45,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
692,['Cr'],conzelmann1983,conzelmann,1983,['i'],d,Cr_i,None,Chromium and chromium-boron pairs in silicon,10.1007/BF00620536,"DLTS-Cr, NA, sPL, EPR",Cr_id_conzelmann1983_1983_None,Ec-0.2,Ec-0.2,,,"no thermal velocity was provided, it was assumed a thermal velocity of 2.046e7.",,,,,,2e-13,,,,,,,,,,,,,,,2e-15,,,,,,,,,,
431,['Mo'],lemke1983,lemke,1983,[''],d,Mo_,None,Über die chemische Natur von Rekombinationszentren in Si-Leistungsbauelementen,10.1002/pssa.2210760265,DLTS,Mo_d_lemke1983_1983_None,Ev+0.28,,,,Assumed thermal velocity of 1e7 measured at 110K,,,boron,diffusion,2e-8/1e7,,,,,,,,,,,150.0,,,,,,,Mo_i_d.srh,,,,,,,,
1080,['Fe'],weber1983,weber,1983,['i'],d,Fe_i,Ev+0.385,Transition metals in silicon,10.1007/BF00617708,review,Fe_id_weber1983_1983_Ev+0.385,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
511,['Pt'],pearton1983,pearton,1983,['s'],a,Pt_s,None,Palladium‐ and platinum‐related levels in silicon: Effect of a hydrogen plasma,10.1063/1.332398,DLTS,Pt_sa_pearton1983_1983_None,Ec-0.28,,,,,,,boron,thermal,,3e-16,,,,,,,,,,,,,,,,,,,,,,,,,
531,['Pt'],pearton1983,pearton,1983,['s'],d,Pt_s,None,Palladium‐ and platinum‐related levels in silicon: Effect of a hydrogen plasma,10.1063/1.332398,DLTS,Pt_sd_pearton1983_1983_None,Ev+0.33,,,,,,,boron,thermal,,6e-16,,,,,,,,,,,,,,,,,,,,,,,,,
292,['Cu'],tavendale1983,tavendale,1983,[''],,Cu_,None,"Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel",10.1088/0022-3719/16/9/011,DLTS-Cr,Cu__tavendale1983_1983_None,Ev+0.53,,,,Maybe lattice effects,,FZ,"boron, phosphorus",,,,,,20,,,,2e-16,,,,,,,,,,,,,,,,,,
410,['Ag'],tavendale1983,tavendale,1983,[''],,Ag_,None,"Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel",10.1088/0022-3719/16/9/011,DLTS-Cr,Ag__tavendale1983_1983_None,Ev+0.48,,,,,,FZ,"boron, phosphorus",,,,,,20,,,,4e-17,,,,,,,,,,,,,,,,,,
475,['Ti'],weber1983,weber,1983,['i'],d,Ti_i,Ec-0.28,Transition metals in silicon,10.1007/BF00617708,review,Ti_id_weber1983_1983_Ec-0.28,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
501,['Ti'],weber1983,weber,1983,['i'],a,Ti_i,Ec-0.08,Transition metals in silicon,10.1007/BF00617708,review,Ti_ia_weber1983_1983_Ec-0.08,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
491,['Ti'],weber1983,weber,1983,['i'],dd,Ti_i,Ev+0.25,Transition metals in silicon,10.1007/BF00617708,review,Ti_idd_weber1983_1983_Ev+0.25,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
40,['V'],weber1983,weber,1983,['i'],dd,V_i,Ev+0.3,Transition metals in silicon,10.1007/BF00617708,review,V_idd_weber1983_1983_Ev+0.3,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
45,['V'],weber1983,weber,1983,['i'],a,V_i,Ec-0.16,Transition metals in silicon,10.1007/BF00617708,review,V_ia_weber1983_1983_Ec-0.16,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
744,"['B', 'Fe']",weber1983,weber,1983,"['s', 'i']",d,B_sFe_i,Ev+0.1,Transition metals in silicon,10.1007/BF00617708,review,B_sFe_id_weber1983_1983_Ev+0.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
315,"['Si', 'Si']",brotherton1983,brotherton,1983,"['v', 'v']",,Si_vSi_v,None,Photoionization cross section of electron irradiation induced levels in silicon,10.1063/1.332732,"DLTS, CV-O",Si_vSi_v_brotherton1983_1983_None,Ev+0.204,,,,Measured other levels but it is unknown what they are,,"FZ, CZ",boron,irradiation,4E-16,,,,"66, 125, 7-10",,,,,,,,,,,,,,,,,,,,6e-17,,
1212,['Ni'],tavendale1983,tavendale,1983,[''],,Ni_,None,"Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel",10.1088/0022-3719/16/9/011,DLTS-Cr,Ni__tavendale1983_1983_None,Ev+0.33,,,,,,FZ,"boron, phosphorus",,,,,,20,,,,1.0000000000000001e-20,,,,,,,,,,,,,,,,,,
178,"['Fe', 'Ga']",weber1983,weber,1983,"['i', 's']",d,Fe_iGa_s,None,Transition metals in silicon,10.1007/BF00617708,review,Fe_iGa_sd_weber1983_1983_None,Ev+0.24,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1183,['Pd'],pearton1983,pearton,1983,['s'],a,Pd_s,None,Palladium‐ and platinum‐related levels in silicon: Effect of a hydrogen plasma,10.1063/1.332398,DLTS,Pd_sa_pearton1983_1983_None,Ec-0.22,,,,"Assumed a typo in paper, for cross section. Paper lists 2e-4",,,boron,thermal,,2e-14,,,,,,,,,,80,,,,,,,,,,,,,,,
662,['Mn'],czaputa1983,czaputa,1983,['i'],d,Mn_i,Ec-0.4,Energy levels of interstitial manganese in silicon,10.1016/0038-1098(83)90549-5,"Hall, EPR",Mn_id_czaputa1983_1983_Ec-0.4,,,,,,,FZ,"boron, phosphorus",implantation,,,,,100,,,,,,,,,,,,,,,,,,,,,,
653,"['B', 'Mn']",weber1983,weber,1983,"['s', 'i']",d,B_sMn_i,Ec-0.55,Transition metals in silicon,10.1007/BF00617708,review,B_sMn_id_weber1983_1983_Ec-0.55,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
647,['Mn'],weber1983,weber,1983,['i'],a,Mn_i,Ec-0.11,Transition metals in silicon,10.1007/BF00617708,review,Mn_ia_weber1983_1983_Ec-0.11,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
646,['Mn'],czaputa1983,czaputa,1983,['i'],a,Mn_i,Ec-0.13,Energy levels of interstitial manganese in silicon,10.1016/0038-1098(83)90549-5,"Hall, EPR",Mn_ia_czaputa1983_1983_Ec-0.13,,,,,,,FZ,"boron, phosphorus",implantation,,,,,100,,,,,,,,,,,,,,,,,,,,,,
629,['Mn'],weber1983,weber,1983,['i'],dd,Mn_i,Ev+0.25,Transition metals in silicon,10.1007/BF00617708,review,Mn_idd_weber1983_1983_Ev+0.25,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
628,['Mn'],czaputa1983,czaputa,1983,['i'],dd,Mn_i,Ev+0.3,Energy levels of interstitial manganese in silicon,10.1016/0038-1098(83)90549-5,"Hall, EPR",Mn_idd_czaputa1983_1983_Ev+0.3,,,,,,,FZ,"boron, phosphorus",implantation,,,,,100,,,,,,,,,,,,,,,,,,,,,,
1079,['Fe'],tavendale1983,tavendale,1983,['i'],d,Fe_i,None,"Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel",10.1088/0022-3719/16/9/011,DLTS-Cr,Fe_id_tavendale1983_1983_None,Ev+0.39,,,,,,FZ,"boron, phosphorus",,,,,,20,,,,3e-17,,,,,,,,,,Fe_i_d.srh,,,,,,,,
934,['Au'],tavendale1983,tavendale,1983,[''],,Au_,None,"Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel",10.1088/0022-3719/16/9/011,DLTS-Cr,Au__tavendale1983_1983_None,Ev+0.48,,,,Ev+0.53 also seen in this sample,,FZ,"boron, phosphorus",,,,,,20,,,,4e-17,,,,,,,,,,,,,,,,,,
636,['Mn'],czaputa1983,czaputa,1983,['p'],d,Mn_p,Ec-0.27,Energy levels of interstitial manganese in silicon,10.1016/0038-1098(83)90549-5,"Hall, EPR",Mn_pd_czaputa1983_1983_Ec-0.27,,,,,,,FZ,"boron, phosphorus",implantation,,,,,100,,,,,,,,,,,,,,,,,,,,,,
710,['Cr'],conzelmann1983,conzelmann,1983,['i'],,Cr_i,None,Chromium and chromium-boron pairs in silicon,10.1007/BF00620536,"DLTS, EPR, luminescence",Cr_i_conzelmann1983_1983_None,Ec-0.20,Ec-0.23,,,,,"CZ,FZ","boron, phosphorus",thermal,,2e-13,,,May-00,,,,,,,,,,,,,,,,,,,,,,
678,['Mn'],czaputa1983,czaputa,1983,[''],,Mn_,None,Energy levels of interstitial manganese in silicon,10.1016/0038-1098(83)90549-5,"Hall, EPR",Mn__czaputa1983_1983_None,Ev+0.17,,,,,,FZ,"boron, phosphorus",implantation,,,,,100,,,,,,,,,,,,,,,,,,,,,,
1177,['Pd'],pearton1983,pearton,1983,[''],d,Pd_,None,Palladium‐ and platinum‐related levels in silicon: Effect of a hydrogen plasma,10.1063/1.332398,DLTS,Pd_d_pearton1983_1983_None,Ev+0.32,,,,,,,boron,thermal,5e-16,,,,,,,,,,,160,,,,,,,,,,,,,,,
1053,['Fe'],tavendale1983,tavendale,1983,[''],,Fe_,None,"Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel",10.1088/0022-3719/16/9/011,DLTS-Cr,Fe__tavendale1983_1983_None,Ev+0.39,,,,,,FZ,boron,,,,,,20,,,,3e-17,,,,,,,,,,Fe_i_d.srh,,,,,,,,
876,['Au'],tavendale1983,tavendale,1983,[''],d,Au_,None,"Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel",10.1088/0022-3719/16/9/011,DLTS,Au_d_tavendale1983_1983_None,Ev+0.34,,,,,,FZ,"boron, phosphorus",,,,,,20,,,,,,,,,,,,,,Au_s_d.srh,,,,,,,,
18,"['Fe', 'O']",tavendale1983,tavendale,1983,"['', '']",,Fe_O_,None,"Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel",10.1088/0022-3719/16/9/011,DLTS-Cr,Fe_O__tavendale1983_1983_None,Ev+0.32,,,,,,FZ,"boron, phosphorus",,,,,,20,,,,1.9999999999999998e-15,,,,,,,,,,,,,,,,,,
123,"['Al', 'Fe']",weber1983,weber,1983,"['s', 'i']",d,Al_sFe_i,Ev+0.21,Transition metals in silicon,10.1007/BF00617708,review,Al_sFe_id_weber1983_1983_Ev+0.21,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
865,['Au'],tavendale1983,tavendale,1983,[''],a,Au_,None,"Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel",10.1088/0022-3719/16/9/011,DLTS,Au_a_tavendale1983_1983_None,Ec-0.55,,,,,,FZ,"boron, phosphorus",,,,,,20,,,,,,,,,,,,,,Au_s_a.srh,,,,,,,,
663,['Mn'],weber1983,weber,1983,['i'],d,Mn_i,Ec-0.42,Transition metals in silicon,10.1007/BF00617708,review,Mn_id_weber1983_1983_Ec-0.42,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
476,['Ti'],wang1984,wang,1984,['i'],d,Ti_i,None,Complete electrical characterization of recombination properties of titanium in silicon,10.1063/1.334095,DLTS-CrMe,Ti_id_wang1984_1984_None,Ec-0.2666,Ec-0.2705,0.0018,,"Error in temperature coefficient not captured, first demonstration of all rates measured with an electrical bias. They forward bias a diode rather than optical bias. They varied the pulse height not the pulse width. While in the paper that titanium has been refereed to as being substitutional atom, but the reference that follows only uses it as a suggestion rather than an assignment.",,CZ,"boron, phosphorus",melt,,,0.0017,,,,,,1.35E-15,1.7e-15,2.57e-14*exp(0.0039/k/T),,,,,,,,,2.61e-7 * (T/300)**(0.01),,2.65e11*(T/300)**2*exp(-0.2666/kT),,,,4e-17,
923,"['Au', 'Fe']",brotherton1984,brotherton,1984,"['s', 'i']",a,Au_sFe_i,None,Electrical observation of the Au-Fe complex in silicon,10.1063/1.333149,"review, DLTS",Au_sFe_ia_brotherton1984_1984_None,Ec-0.354,,,,Rates are from fitting to a digitization of figure 3.,,,,,,,,,,,,,,,2e-15,,,,,,,,,,,5.28e7 * T**2 * exp(-0.352/kT),,,,,
912,"['Au', 'Fe']",brotherton1984,brotherton,1984,"['s', 'i']",d,Au_sFe_i,None,Electrical observation of the Au-Fe complex in silicon,10.1063/1.333149,"review, DLTS",Au_sFe_id_brotherton1984_1984_None,Ev+0.42,,,,Rates are from fitting to a digitization of figure 3.,,,,,2.6e-15,,,,,,,,,,,,,,,,,,,,,4.72e7 * T**2 * exp(-0.435/kT),,,,,
955,['Zn'],wang1984a,wang,1984,['s'],a,Zn_s,Ei-0.274,Electron capture at the two acceptor levels of a zinc center in silicon,10.1103/PhysRevB.30.5896,"TS-I, DLTS-Cr",Zn_sa_wang1984a_1984_Ei-0.274,Ev+0.326,,,,"Energy levels and capture cross sections not provided, these are calculated at 300 K.",,,boron,thermal,,,,7.41e12*(T/300) * exp(-0.326/kT),,,,,2.92e-15,,1.08e-15,,,,,,,,,4.16e-10 * (1-exp(-481/T))**(-20.1)*exp(-2.23/(exp(481/T)-1)),4.9e-8*(300/T)**(2.15),,,,,,
968,['Zn'],wang1984a,wang,1984,['s'],aa,Zn_s,None,Electron capture at the two acceptor levels of a zinc center in silicon,10.1103/PhysRevB.30.5896,"TS-I, DLTS-Cr",Zn_saa_wang1984a_1984_None,Ev+0.664,,,,"Energy levels and capture cross sections not provided, these are calculated at 300 K.",,,boron,thermal,,,,5.36e12*(T/300)**(-2) * exp(-0.644/kT),,,,,3.5e-15,,1.5e-19,,,,,,,,,3.03e-6 * T ** (-2/3) * exp(-(4.10e5/T)**(1/3)) * (1- exp(-584/T))**(-9.86) * exp(-2.8/(exp(585/T)-1)),5.72e-8 * (300/T)**(3.93),,,,,,
585,['H'],irmscher1984,irmscher,1984,['i'],d,H_i,None,Hydrogen-related deep levels in proton-bombarded silicon,10.1088/0022-3719/17/35/007,DLTS-M,H_id_irmscher1984_1984_None,Ec-0.20,,,,"Corrected for field effects. Filling faster than 50 nm for 10 Ohm cm. Assumed thermal velocity of 1.2e7 and 1e7 for electrons and holes retrospectively, evaluated at 80 K.",,,,,1e-8/1e7,2e-7/1.2e7,,,,,,,,,,,,,,,,,,1e-8,2e-7,2.3e13 * exp(-0.18/kT),,,,,
409,['Ag'],pearton1984,pearton,1984,[''],,Ag_,None,Electrical properties of deep silver- and iron-related centres in silicon,10.1088/0022-3719/17/36/023,DLTS-Cr,Ag__pearton1984_1984_None,Ev+0.29,,,,"Says is silver, but unlikely",,,"boron, phosphorus",thermal,,,,,7,,,,,,9e-18,,,,,,,,,,,,,,,,
401,['Ag'],pearton1984,pearton,1984,[''],a,Ag_,None,Electrical properties of deep silver- and iron-related centres in silicon,10.1088/0022-3719/17/36/023,DLTS,Ag_a_pearton1984_1984_None,Ec-0.54,,,,,,,"boron, phosphorus",thermal,,1e-14,,,7,,,,,,,,,,,,,,Ag_s_d.srh,,,,,,,,
492,['Ti'],wang1984,wang,1984,['i'],dd,Ti_i,None,Complete electrical characterization of recombination properties of titanium in silicon,10.1063/1.334095,DLTS-CrMe,Ti_idd_wang1984_1984_None,,Ev+0.255,,,"Error in temperature coefficient of the values recorded here was not captured. This is the first demonstration of all rates measured with an electrical bias. They vaired the pulse height not the pulse width. They forward bias a diode rather than  optical bias. While in the paper that titanium has been refereed to as being substitutional atom, but the reference that follows only uses it as a suggestion rather than an assignment.",,CZ,"boron, phosphorus",melt,,,,2.02e10*(T/300)**2*exp(-0.2819/kT),,,,,1.09e-16*exp(-0.027/kT),5e-16,1.3e-14*(300/T)**1.02,,,,,,,,,1.26e-7 * (300/T)**(0.61),1.24e-9 * exp(-0.0302/kT),,,,,1.4e-17,
804,"['B', 'Fe']",chantre1985,chantre,1985,"['', '']",,B_Fe_,Ev+0.1,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,,B_Fe__chantre1985_1985_Ev+0.1,,,,,"Data published in inaccessible conference paper, and reprinted here. For <111> configuration",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
805,"['B', 'Fe']",chantre1985_1,chantre,1985,"['', '']",,B_Fe_,Ev+0.03,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,B_Fe__chantre1985_1_1985_Ev+0.03,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
162,"['Al', 'Fe']",chantre1985,chantre,1985,"['', '']",dd,Al_Fe_,None,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,"DLTS, TS-C",Al_Fe_dd_chantre1985_1985_None,Ev+0.13,,,,130 K,,"CZ, FZ",aluminium,thermal,,,,,1,,,,,,,,,,,,,,,,,,,,,,
161,"['Al', 'Fe']",chantre1985_1,chantre,1985,"['', '']",d,Al_Fe_,Ev+0.2,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,Al_Fe_d_chantre1985_1_1985_Ev+0.2,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
734,"['B', 'Cr']",chantre1985,chantre,1985,"['', '']",,B_Cr_,Ev+0.29,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,,B_Cr__chantre1985_1985_Ev+0.29,,,,,"Data published in inaccessible conference paper, and reprinted here. For <111> configuration",,,,,,,,,,,,,,,,,,,,,,,BCr_s-i_d.srh,,,,,,,,
618,['N'],nauka1985_3,nauka,1985,[''],,N_,None,Nitrogen-related deep electron traps in float zone silicon,10.1063/1.96274,DLTS,N__nauka1985_3_1985_None,Ec-0.5,,,,Forms in nitrogen doped FZ after  anneals >1273 K,,FZ,phosphorus,melt,,,,,220,,,,,,,,,,,,,,,,,,,,,,
745,"['B', 'Fe']",brotherton1985,brotherton,1985,"['s', 'i']",d,B_sFe_i,None,Iron and the iron-boron complex in silicon,10.1063/1.335468,DLTS,B_sFe_id_brotherton1985_1985_None,Ev+0.095,,,,,,"CZ, FZ","boron, phosphorus",,,,,,,,,,,,,,,,,,,,,,,,,,,,
192,"['Ga', 'Mn']",chantre1985_2,chantre,1985,"['', '']",,Ga_Mn_,Ec-0.43,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,,Ga_Mn__chantre1985_2_1985_Ec-0.43,,,,,"Data published in inaccessible conference paper, and reprinted here. For <111> configuration",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
190,"['Ga', 'Mn']",chantre1985,chantre,1985,"['', '']",,Ga_Mn_,Ec-0.42,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,,Ga_Mn__chantre1985_1985_Ec-0.42,,,,,"Data published in inaccessible conference paper, and reprinted here. For <111> configuration",,,,,,,,,,,,,,,,,,0.01,,,,,,,,,,,,,
307,"['Si', 'Si']",kimerling1985,kimerling,1985,"['v', 'v']",d,Si_vSi_v,None,Defect Structure and Properties by Junction Spectroscopy,10.1557/PROC-46-1,review,Si_vSi_vd_kimerling1985_1985_None,Ev+0.2,,,,,,,boron,,,,,,,,,,,,,,,,,,,,,,,,,,,,
319,"['B', 'Si']",chantre1985a_1,chantre,1985,"['s', 'v']",,B_sSi_v,None,Configurationally bistable C center in quenched Si:B: Possibility of a boron-vacancy pair,10.1103/PhysRevB.32.3687,DLTS,B_sSi_v_chantre1985a_1_1985_None,Ec-0.36,,,, C center,,CZ,boron,thermal,,,,,2019/10/15,,,,,,,,,,,,,,,,,,,,,,
617,['N'],nauka1985_2,nauka,1985,[''],,N_,None,Nitrogen-related deep electron traps in float zone silicon,10.1063/1.96274,DLTS,N__nauka1985_2_1985_None,Ec-0.58,,,,Forms in nitrogen doped FZ after anneals >1173 K,,FZ,phosphorus,melt,,5e-14,0.01,,220,,,,,,,,,,,,2e-14,,,,,,,,,,
318,"['B', 'Si']",chantre1985a,chantre,1985,"['s', 'v']",,B_sSi_v,None,Configurationally bistable C center in quenched Si:B: Possibility of a boron-vacancy pair,10.1103/PhysRevB.32.3687,DLTS,B_sSi_v_chantre1985a_1985_None,Ev+0.5,,,,C center,,CZ,boron,thermal,,,,,2019/10/15,,,,,,,,,,,,,,,,,,,,,,
191,"['Ga', 'Mn']",chantre1985_1,chantre,1985,"['', '']",,Ga_Mn_,Ec-0.49,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,Ga_Mn__chantre1985_1_1985_Ec-0.49,,,,,,,,,,,,,,,,,,,,,,,0.01,,,,,,,,,,,,,
156,"['Al', 'Fe']",chantre1985_1,chantre,1985,"['', '']",,Al_Fe_,Ev+0.13,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,Al_Fe__chantre1985_1_1985_Ev+0.13,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
616,['N'],nauka1985_1,nauka,1985,[''],,N_,None,Nitrogen-related deep electron traps in float zone silicon,10.1063/1.96274,DLTS,N__nauka1985_1_1985_None,Ec-0.28,,,,"Found in as grown material, disappears with anneals >1173 K",,FZ,phosphorus,melt,,7e-14,,,220,,,,,,,,,,,,3e-14,,,,,,,,,,
163,"['Al', 'Fe']",chantre1985_1,chantre,1985,"['', '']",dd,Al_Fe_,Ev+0.13,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,Al_Fe_dd_chantre1985_1_1985_Ev+0.13,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
615,['N'],nauka1985,nauka,1985,[''],,N_,None,Nitrogen-related deep electron traps in float zone silicon,10.1063/1.96274,DLTS,N__nauka1985_1985_None,Ec-0.19,,,,"Found in as grown material, disappears with anneals >1173 K",,FZ,phosphorus,melt,,4e-15,,,220,,,,,,,,,,,,2e-15,,,,,,,,,,
752,"['B', 'Fe']",brotherton1985,brotherton,1985,"['s', 'i']",a,B_sFe_i,None,Iron and the iron-boron complex in silicon,10.1063/1.335468,DLTS,B_sFe_ia_brotherton1985_1985_None,Ec-0.29,,,,,,"CZ, FZ","boron, phosphorus",,,,,,,,,,,,,,,,,,,,,,,,,,,,
160,"['Al', 'Fe']",chantre1985,chantre,1985,"['', '']",d,Al_Fe_,None,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,"DLTS, TS-C",Al_Fe_d_chantre1985_1985_None,Ev+0.2,,,,90 K,,"CZ, FZ",aluminium,thermal,,,,,1,,,,,,,,,,,,,,FeAl_i-s_d.srh,,,,,,,,
188,"['Fe', 'Ga']",chantre1985,chantre,1985,"['', '']",,Fe_Ga_,Ev+0.24,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,,Fe_Ga__chantre1985_1985_Ev+0.24,,,,,"Data published in inaccessible conference paper, and reprinted here. For <111> configuration",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
189,"['Fe', 'Ga']",chantre1985_1,chantre,1985,"['', '']",,Fe_Ga_,Ev+0.17,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,Fe_Ga__chantre1985_1_1985_Ev+0.17,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
632,"['B', 'Mn']",chantre1985,chantre,1985,"['', '']",,B_Mn_,Ec-0.55,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,,B_Mn__chantre1985_1985_Ec-0.55,,,,,"Data published in inaccessible conference paper, and reprinted here. For <111> configuration",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
633,"['B', 'Mn']",chantre1985_1,chantre,1985,"['', '']",,B_Mn_,Ec-0.62,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,B_Mn__chantre1985_1_1985_Ec-0.62,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
128,"['Al', 'Cr']",chantre1985,chantre,1985,"['', '']",,Al_Cr_,Ev+0.45,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,,Al_Cr__chantre1985_1985_Ev+0.45,,,,,"Data published in inaccessible conference paper, and reprinted here. For <111> configuration.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
129,"['Al', 'Cr']",chantre1985_1,chantre,1985,"['', '']",,Al_Cr_,Ev+0.38,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,Al_Cr__chantre1985_1_1985_Ev+0.38,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
130,"['Al', 'Cr']",chantre1985_2,chantre,1985,"['', '']",,Al_Cr_,Ev+0.52,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,,Al_Cr__chantre1985_2_1985_Ev+0.52,,,,,"Data published in inaccessible conference paper, and reprinted here. For <111> configuration.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1081,['Fe'],brotherton1985,brotherton,1985,['i'],d,Fe_i,None,Iron and the iron-boron complex in silicon,10.1063/1.335468,DLTS-Cr,Fe_id_brotherton1985_1985_None,Ev+0.419,Ev+0.37,,,emission rate taken from digitization of graph.,,"CZ, FZ","boron, phosphorus",,,,,766021*T**2*exp(-0.419/kT),"30,100",,,,5.6e-16*exp(-0.048/kT),,,,,,,,,,,,,,,,,,
172,"['Cr', 'Ga']",chantre1985_2,chantre,1985,"['', '']",,Cr_Ga_,Ev+0.48,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,,Cr_Ga__chantre1985_2_1985_Ev+0.48,,,,,"Data published in inaccessible conference paper, and reprinted here. For <111> configuration",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
171,"['Cr', 'Ga']",chantre1985_1,chantre,1985,"['', '']",,Cr_Ga_,Ev+0.4,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,Cr_Ga__chantre1985_1_1985_Ev+0.4,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
170,"['Cr', 'Ga']",chantre1985,chantre,1985,"['', '']",,Cr_Ga_,Ev+0.47,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,,Cr_Ga__chantre1985_1985_Ev+0.47,,,,,"Data published in inaccessible conference paper, and reprinted here. For <111> configuration",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
119,"['Al', 'Mn']",chantre1985,chantre,1985,"['', '']",,Al_Mn_,Ec-0.45,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,,Al_Mn__chantre1985_1985_Ec-0.45,,,,,"Data published in inaccessible conference paper, and reprinted here. For <111> configuration",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
735,"['B', 'Cr']",chantre1985_1,chantre,1985,"['', '']",,B_Cr_,Ev+0.22,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,B_Cr__chantre1985_1_1985_Ev+0.22,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
153,"['Al', 'Si']",chantre1985,chantre,1985,"['', 'v']",d,Al_Si_v,None,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,DLTS,Al_Si_vd_chantre1985_1985_None,Ev+0.52,,,,Only appears in ultra fast quenched material.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
155,"['Al', 'Fe']",chantre1985,chantre,1985,"['', '']",,Al_Fe_,Ev+0.2,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,Al_Fe__chantre1985_1985_Ev+0.2,,,,,,,,,,,,,,,,,,,,,,,,,,,,AlFe_s-i_d.srh,,,,,,,,
120,"['Al', 'Mn']",chantre1985_1,chantre,1985,"['', '']",,Al_Mn_,Ec-0.52,Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs,10.1103/PhysRevB.31.7979,theory,Al_Mn__chantre1985_1_1985_Ec-0.52,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1025,['Unknown'],indusekhar1986_3,indusekhar,1986,[''],,Unknown_,None,Investigation of Deep Defects Due to _-Particle Irradiation in n-Silicon,10.1002/pssa.2210930230,DLTS-Cr,Unknown__indusekhar1986_3_1986_None,Ec-0.28,,,,"sigma > 1e-15, Lists several papers that report the same defect",,epi,phosphorus,irridation,9.2e-13,,,,2,-4.2,,,,,,115 K,5 ms,,,,,,,,,,,,,,
866,['Au'],lemke1986,lemke,1986,[''],a,Au_,None,Dotierungseigenschaften von Silber in Silizium,10.1002/pssa.2210940171,DLTS,Au_a_lemke1986_1986_None,Ec-0.57,,,,assume value for thermal velocity of 2e7,,FZ,"boron, phosphorus",thermal,,1.6e-9/2e7,,,"50,20",,,,,,,,,,,,,,Au_s_a.srh,,,,,,,,
877,['Au'],lemke1986,lemke,1986,[''],d,Au_,None,Dotierungseigenschaften von Silber in Silizium,10.1002/pssa.2210940171,DLTS,Au_d_lemke1986_1986_None,Ev+0.34,,,,assumed thermal velocity of 1e7,,FZ,"boron, phosphorus",thermal,,,,,"50,20",,,,1.2e-8/1e7,,,,,,,,,,Au_s_d.srh,,1.2e-08,,,,,,
1055,['Fe'],indusekhar1986a,indusekhar,1986,[''],,Fe_,None,Properties of iron related quenched-in levels in p-silicon,10.1002/pssa.2210950134,DLTS-Cr,Fe__indusekhar1986a_1986_None,Ev+0.46,Ev+0.42,,,"the emission rate of holes was digitized from a graph. It differs from the quoted activation energy in the paper. This emission rate is very different from that of interstitial iron, also the instabilities were note seen.",,CZ,boron,,,,,2e8*T**2 * exp(-0.483/kT),,,,,6.8e-16*exp(-0.04/kT),,,,,,,,,,FeO_-_.srh,,,,,,,,
28,"['O', 'Si']",indusekhar1986,indusekhar,1986,"['', 'v']",a,O_Si_v,None,Investigation of Deep Defects Due to _-Particle Irradiation in n-Silicon,10.1002/pssa.2210930230,DLTS-Cr,O_Si_va_indusekhar1986_1986_None,Ec-0.18,,,,,,epi,phosphorus,irridation,1.2e-15,,,,2,-4.2,,,5e-19,,,107 K,5 ms,,,,,,,,,,,,,,
402,['Ag'],lemke1986,lemke,1986,[''],a,Ag_,None,Dotierungseigenschaften von Silber in Silizium,10.1002/pssa.2210940171,DLTS,Ag_a_lemke1986_1986_None,Ec-0.57,,,,,,FZ,"boron, phosphorus",thermal,,,,,"50,20",,,,,,,,,,,,,,Ag_s_a.srh,1.3e-09,,,,,,,
1024,['Unknown'],indusekhar1986_2,indusekhar,1986,[''],,Unknown_,None,Investigation of Deep Defects Due to _-Particle Irradiation in n-Silicon,10.1002/pssa.2210930230,DLTS-Cr,Unknown__indusekhar1986_2_1986_None,Ec-0.54,,,,"sigma > 1e-15, defect in unirradiated sample",,epi,phosphorus,irridation,2.6e-15,,,,2,-4.2,,,,,,267 K,5 ms,,,,,,,,,,,,,,
388,['Ag'],lemke1986,lemke,1986,[''],d,Ag_,None,Dotierungseigenschaften von Silber in Silizium,10.1002/pssa.2210940171,DLTS,Ag_d_lemke1986_1986_None,Ev+0.39,,,,,,FZ,"boron, phosphorus",thermal,,,,,"50,20",,"141.1,152.4,165.7,181.4","1,10,100,1000",,,,,,,,,,,Ag_s_d.srh,,1e-8,,,,,,
1022,['Unknown'],indusekhar1986,indusekhar,1986,[''],,Unknown_,None,Investigation of Deep Defects Due to _-Particle Irradiation in n-Silicon,10.1002/pssa.2210930230,DLTS-Cr,Unknown__indusekhar1986_1986_None,Ec-0.28,,,,Defect in unirradiated sample,,epi,phosphorus,irridation,2.1e-17,,,,2,-4.2,,,1.2e-16,,,183 K,5 ms,,,,,,,,,,,,,,
352,"['Si', 'Si']",indusekhar1986,indusekhar,1986,"['v', 'v']",aa,Si_vSi_v,None,Investigation of Deep Defects Due to _-Particle Irradiation in n-Silicon,10.1002/pssa.2210930230,DLTS-Cr,Si_vSi_vaa_indusekhar1986_1986_None,Ec-0.26,,,,,,epi,phosphorus,irridation,4.2e-15,,,,2,-4.2,,,2.8000000000000005e-17,,,145 K,5 ms,,,,,,,,,,,,,,
1232,['Ni'],jaraiz1986,jaraiz,1986,[''],a,Ni_,None,Electron thermal emission rates of nickel centers in silicon,10.1016/0038-1101(86)90008-0,CV-TF,Ni_a_jaraiz1986_1986_None,Ec-0.360,,,,,,FZ,phosphorus,,,,0.01,,50-60,,,,,,,,,,,,,,,,,,,,,,
338,"['Si', 'Si']",indusekhar1986,indusekhar,1986,"['v', 'v']",a,Si_vSi_v,None,Investigation of Deep Defects Due to _-Particle Irradiation in n-Silicon,10.1002/pssa.2210930230,DLTS-Cr,Si_vSi_va_indusekhar1986_1986_None,Ec-0.48,,,,sigma > 1e-15,,epi,phosphorus,irridation,5.3e-13,,,,2,-4.2,,,,,,196 K,5 ms,,,,,,,,,,,,,,
1213,['Ni'],jaraiz1986,jaraiz,1986,[''],,Ni_,None,Electron thermal emission rates of nickel centers in silicon,10.1016/0038-1101(86)90008-0,CV-TF,Ni__jaraiz1986_1986_None,Ec-0.570,,,,Unknown but believe what Lebedev saw. Assumes is related to Nickel,,FZ,phosphorus,,,,0.01,,50-60,,,,,,,,,,,,,,,,,,,,,,
1023,['Unknown'],indusekhar1986_1,indusekhar,1986,[''],,Unknown_,None,Investigation of Deep Defects Due to _-Particle Irradiation in n-Silicon,10.1002/pssa.2210930230,DLTS-Cr,Unknown__indusekhar1986_1_1986_None,Ec-0.51,,,,sigma > 1e-15,,epi,phosphorus,irridation,5.799999999999999e-14,,,,2,-4.2,,,,,,225K,5 ms,,,,,,,,,,,,,,
218,['C'],asom1987,asom,1987,['i'],d,C_i,None,Interstitial defect reactions in silicon,10.1063/1.98465,"DLTS-Me, EPR",C_id_asom1987_1987_None,Ev+0.27,,,,States is ending conjecture over energy levels.,,,,,,,,,,,,,,,,150 K,,,,,,,,,,,,,,,
1082,['Fe'],hangleiter1987,hangleiter,1987,['i'],d,Fe_i,None,Nonradiative recombination via deep impurity levels in silicon: Experiment,10.1103/PhysRevB.35.9149,"luminescence,",Fe_id_hangleiter1987_1987_None,,,,,"To put data in the data a thermal velocity of (2e7 *(T/300)^(0.5)). ""The hole-capture coefficient of Fe determined from the carrier lifetime in n-type Si at 300 K is more than 10 times larger than the value measured with DLTS. Puts this down to different capture mechanisms in forward and reverse bias.",,,,,,,,,,,,,2e-8*(300/T)**(-0.6)/(2e7 *(T/300)**(0.5)),,,,,,,,,,,,,,,,,,
82,"['C', 'P']",asom1987,asom,1987,"['i', 's']",,C_iP_s,None,Interstitial defect reactions in silicon,10.1063/1.98465,DLTS,C_iP_s_asom1987_1987_None,Ec-0.29,,,,"Has three configurations. State 1. There is inconsistances within the paper, say 0.29 and 0.27 in different places.",,,,,,,,,,,,,,,,175 K,,,,,,,,,,,,,,,
85,"['C', 'P']",asom1987_3,asom,1987,"['i', 's']",,C_iP_s,None,Interstitial defect reactions in silicon,10.1063/1.98465,DLTS,C_iP_s_asom1987_3_1987_None,Ec-0.3,,,,Has three configurations. State 2.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
956,['Zn'],lemke1987,lemke,1987,['s'],a,Zn_s,None,Störstellenreaktionen in den Randschichtbereichen von Si-Kristallen mit Zn- und Pt-Dotierung,10.1002/pssa.2211010122,DLTS-Cr,Zn_sa_lemke1987_1987_None,Ev+0.293,,,,"Saw two other levels which interact with the Zn levels, depending on annealing temeprature. The value published in his paper for the energy level 0.61 eV. This has not had the T^2 dependence accounted for. The values below are taken from a digitisation of Figure 1. The aquired data provided a slope of -0.318, close to the -0.31 value provided in his paper. It was also confirmed that accounting for the T^2 dependenced provided a betting R^2 value.",,,"boron, phosphorous",thermal,,,,7.55e7 * T**2* exp(-0.293/kT),,,,,,,,,,,,,,,,,>3e-8,,,,,,
84,"['C', 'P']",asom1987_2,asom,1987,"['i', 's']",,C_iP_s,None,Interstitial defect reactions in silicon,10.1063/1.98465,DLTS,C_iP_s_asom1987_2_1987_None,Ec-0.21,,,,Has three configurations. State 2,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
389,['Ag'],baber1987,baber,1987,[''],d,Ag_,Ev+0.34,Characterization of silver-related deep levels in silicon,10.1063/1.339425,"DLTS-Cr, DLTS-S",Ag_d_baber1987_1987_Ev+0.34,,Ev+0.35,,,change in emission rate with bias. DLTS database.,,,"boron, phosphorus",thermal,,,,,"13,5",-3.0,,,1.7e-15,,,,,,,,,,Ag_s_d.srh,,1.7e-08,,,,,,
267,['Cu'],brotherton1987_1,brotherton,1987,[''],d,Cu_,None,Deep levels of copper in silicon,10.1063/1.339564,"DLTS, luminescence",Cu_d_brotherton1987_1_1987_None,Ev+0.093,,,,Different defect from the others reported In the paper. Believed to be related to the luminescence centre,,FZ,"boron, phosphorus",thermal,3e-16,1e-14,,,66-125,,,,,,,,,,,,,,CuCu_i-s_d.srh,,,,,,,,
969,['Zn'],lemke1987,lemke,1987,['s'],aa,Zn_s,None,Störstellenreaktionen in den Randschichtbereichen von Si-Kristallen mit Zn- und Pt-Dotierung,10.1002/pssa.2211010122,DLTS-Cr,Zn_saa_lemke1987_1987_None,Ev+0.565,,,,"Saw two other levels which interact with the Zn levels, depending on annealing temeprature. The value published in his paper for the energy level 0.61 eV. This has not had the T^2 dependence accounted for. The values below are taken from a digitisation of Figure 1. It was confirmed that this aquired data provided a slope of -0.62 as stated in his paper. It was also confirmed that accounting for the T^2 dependenced provided a betting R^2 value.",,,"boron, phosphorous",thermal,,,,1.47e6 * T**2* exp(-0.565/kT),,,,,,,,,,,,,,,,,>3e-8,,,,,,
295,['Cu'],brotherton1987,brotherton,1987,[''],aa,Cu_,None,Deep levels of copper in silicon,10.1063/1.339564,"DLTS, luminescence",Cu_aa_brotherton1987_1987_None,Ec-0.161,,,,"Cu_d, Cu_a, and Cu_aa  from the same paper are the same defect",,FZ,"boron, phosphorus",thermal,3.3e-17,3.3e-17,,,66-125,,,,,,,,,,,,,,Cu_s_aa.srh,,,,,,,,
403,['Ag'],baber1987,baber,1987,[''],a,Ag_,Ec-0.54,Characterization of silver-related deep levels in silicon,10.1063/1.339425,"DLTS-Cr, DLTS-S",Ag_a_baber1987_1987_Ec-0.54,,Ec-0.548,,,change in emssion rate with bias. measurement data taken from laplace DLTS database. Capture at 300K,,,"boron, phosphorus",thermal,,,,,"13,5",-3.0,"228,247,269.2,295.7","1,10,100,1000",,,2.20E-16,,,,,,,,Ag_s_a.srh,1.3e-09,,,,,,,
316,"['Si', 'Si']",asom1987,asom,1987,"['v', 'v']",,Si_vSi_v,None,Interstitial defect reactions in silicon,10.1063/1.98465,DLTS,Si_vSi_v_asom1987_1987_None,Ec-0.23,,,,Has three configurations. State 2,,,,,,,,,,,,,,,,125 K,,,,,,,,,,,,,,,
298,['Cu'],brotherton1987_1,brotherton,1987,[''],a,Cu_,None,Deep levels of copper in silicon,10.1063/1.339564,"DLTS, luminescence",Cu_a_brotherton1987_1_1987_None,Ec-0.402,,,,Different defect from the others reported In the paper,,FZ,"boron, phosphorus",thermal,1.8e-17,1.8e-17,,,66-125,,,,,,,,,,,,,,,,,,,,,,
223,['C'],asom1987,asom,1987,['i'],a,C_i,None,Interstitial defect reactions in silicon,10.1063/1.98465,"DLTS-Me, EPR",C_ia_asom1987_1987_None,Ec-0.12,,,,States is ending conjecture over energy levels.,,,,,,,,,,,,,,,,60 K,,,,,,,,,,,,,,,
35,"['C', 'O']",asom1987,asom,1987,"['i', 'i']",,C_iO_i,None,Interstitial defect reactions in silicon,10.1063/1.98465,"DLTS-Me, EPR",C_iO_i_asom1987_1987_None,Ev+0.36,,,,States is ending conjecture over energy levels.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
753,"['B', 'Fe']",hangleiter1987,hangleiter,1987,"['s', 'i']",a,B_sFe_i,None,Nonradiative recombination via deep impurity levels in silicon: Experiment,10.1103/PhysRevB.35.9149,"luminescence,",B_sFe_ia_hangleiter1987_1987_None,,,,,Assumed a thermal velocity of (2e7 *(T/300)^(0.5)),,,,,,,,,,,,,3e-8*(300/T)**(-0.6)/(2e7 *(T/300)**(0.5)),,3e-7*(300/T)**(-0.6)/(2e7 *(T/300)**(0.5)),,,,,,,,,,,,,,,,
906,['Au'],hangleiter1987,hangleiter,1987,['s'],d,Au_s,None,Nonradiative recombination via deep impurity levels in silicon: Experiment,10.1103/PhysRevB.35.9149,"luminescence,",Au_sd_hangleiter1987_1987_None,,,,,"Assumed a thermal velocity of (2e7 *(T/300)^(0.5)), normalised to give the value from Wu and Peaker.",,,,,,,,,,,,,,,6e-9*exp(0.03/kT)*exp(-0.03/k/300)/(2e7 *(T/300)**(0.5)),,,,,,,,,,,,,,,,
224,"['C', 'C', 'Si']",asom1987,asom,1987,"['s', 's', 'i']",,C_sC_sSi_i,None,Interstitial defect reactions in silicon,10.1063/1.98465,DLTS,C_sC_sSi_i_asom1987_1987_None,Ec-0.1,,,,"Metastable, stated that the existence is confirmed by optically detected magneto resonance.",,,,,,,,,,,,,,,,55 K,,,,,,,,,,,,,,,
83,"['C', 'P']",asom1987_1,asom,1987,"['i', 's']",,C_iP_s,None,Interstitial defect reactions in silicon,10.1063/1.98465,DLTS,C_iP_s_asom1987_1_1987_None,Ec-0.23,,,,Has three configurations. State 1,,,,,,,,,,,,,,,,125 K,,,,,,,,,,,,,,,
695,['Cr'],hangleiter1987,hangleiter,1987,['i'],d,Cr_i,None,Nonradiative recombination via deep impurity levels in silicon: Experiment,10.1103/PhysRevB.35.9149,"luminescence,",Cr_id_hangleiter1987_1987_None,,,,,Assumed a thermal velocity of (2e7 *(T/300)^(0.5)),,,,,,,,,,,,,1e-7*(300/T)**(-1.1)/(2e7 *(T/300)**(0.5)),,,,,,,,,,,,,,,,,,
266,['Cu'],brotherton1987,brotherton,1987,[''],d,Cu_,None,Deep levels of copper in silicon,10.1063/1.339564,"DLTS, luminescence",Cu_d_brotherton1987_1987_None,Ev+0.233,,,,"Cu_d, Cu_a, and Cu_aa  from the same paper are the same defect",,FZ,"boron, phosphorus",thermal,8e-17,1.3999999999999999e-14,,,66-125,,,,,,,,,,,,,,,,,,,,,,
890,['Au'],hangleiter1987,hangleiter,1987,['s'],a,Au_s,None,Nonradiative recombination via deep impurity levels in silicon: Experiment,10.1103/PhysRevB.35.9149,luminescence,Au_sa_hangleiter1987_1987_None,,,,,Assumed a thermal velocity of (2e7 *(T/300)^(0.5)),,,,,,,,,,,,,5e-8*exp(0.03/kT)*exp(-0.03/k/300)/(2e7 *(T/300)**(0.5)),,,,,,,,,,,,,,,,,,
232,"['C', 'C']",asom1987,asom,1987,"['s', 'i']",,C_iC_s,None,Interstitial defect reactions in silicon,10.1063/1.98465,DLTS,C_iC_s_asom1987_1987_None,Ec-0.17,,,,"Metastable, tentative assignment. Similar behavior observed in EPR.",,,,,,,,,,,,,,,,75 K,,,,,,,,,,,,,,,
704,"['B', 'Cr']",hangleiter1987,hangleiter,1987,"['s', 'i']",d,B_sCr_i,None,Nonradiative recombination via deep impurity levels in silicon: Experiment,10.1103/PhysRevB.35.9149,luminescence,B_sCr_id_hangleiter1987_1987_None,,,,,Assumed a thermal velocity of (2e7 *(T/300)^(0.5)),,,,,,,,,,,,,2e-7*(300/T)**(-1.2)/(2e7 *(T/300)**(0.5)),,6e-7*(300/T)**(-1.2)/(2e7 *(T/300)**(0.5)),,,,,,,,,,,,,,,,
350,['Si'],asom1987,asom,1987,['v'],a,Si_v,None,Interstitial defect reactions in silicon,10.1063/1.98465,DLTS,Si_va_asom1987_1987_None,Ev+0.1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
297,['Cu'],brotherton1987,brotherton,1987,[''],a,Cu_,None,Deep levels of copper in silicon,10.1063/1.339564,"DLTS, luminescence",Cu_a_brotherton1987_1987_None,Ev+0.425,,,,"Cu_d, Cu_a, and Cu_aa  from the same paper are the same defect",,FZ,"boron, phosphorus",thermal,3e-15,7.4e-15,,,66-125,,,,,,,,,,,,,,,,,,,,,,
21,['O'],chantre1987,chantre,1987,['p'],,O_p,None,Metastable thermal donor states in silicon,10.1063/1.97812,DLTS,O_p_chantre1987_1987_None,Ec-0.15,,,,"75K Thermal donor state 2.Heat treatments were performed at 450 C in flowing N2 for various durations: 30 min, 1 h, 2 h, 5 h.",,CZ,boron,,,,,,2,,,,,,,,,,,,,,,,,,,,,,
390,['Ag'],pandian1988,pandian,1988,[''],d,Ag_,None,Silver related deep levels in silicon,10.1002/pssa.2211090129,DLTS-Cr,Ag_d_pandian1988_1988_None,Ev+0.33,,,,,,,"boron, phosphorus",thermal,,,,,10,,,,3.1e-16,,,,,,,,,,Ag_s_d.srh,,,,,,,,
16,"['Fe', 'O', 'Si']",you1988,you,1988,"['i', '', 'v']",,Fe_iO_Si_v,None,Iron-vacancy-oxygen complex in silicon,10.1063/1.340297,DLTS,Fe_iO_Si_v_you1988_1988_None,Ec-0.36,,,,,,CZ,phosphorus,thermal,,4e-15,,,1-3,,,,,,,,,,,,,,,,,,,,,,
404,['Ag'],pandian1988,pandian,1988,[''],a,Ag_,None,Silver related deep levels in silicon,10.1002/pssa.2211090129,DLTS-Cr,Ag_a_pandian1988_1988_None,Ec-0.56,,,,,,,"boron, phosphorus",thermal,,,,,10,,,,,,3e-16,,,,,,,,Ag_s_a.srh,,,,,,,,
477,['Ti'],mathiot1989,mathiot,1989,['i'],d,Ti_i,None,Titanium-related deep levels in silicon: A reexamination,10.1063/1.343608,"DLTS-Cr, Hall",Ti_id_mathiot1989_1989_None,Ec-0.317,Ec-0.297,,,"Noted that could not vary the filling pulse, as it was too short and so reanalyzed the data of wang1984.",,"FZ,CZ",phosphorus,thermal,,,,,,,,,,,4.6e-8*exp(-0.02/k/T)/T**(2.5),,,,,,,,,,,1.1e13 *T**(-0.5)*exp(-0.317/k/T),,,,,
502,['Ti'],mathiot1989,mathiot,1989,['i'],a,Ti_i,None,Titanium-related deep levels in silicon: A reexamination,10.1063/1.343608,DLTS,Ti_ia_mathiot1989_1989_None,Ec-0.09,,,,"Noted that could not vary the filling pulse, as it was too short.",,"FZ,CZ",phosphorus,thermal,,2.9e-14,,,,,,,,,,,,,,,,,,,,1.85e8 *T**2*exp(-0.09/kT),,,,,
493,['Ti'],mathiot1989,mathiot,1989,['i'],dd,Ti_i,None,Titanium-related deep levels in silicon: A reexamination,10.1063/1.343608,DLTS-Cr,Ti_idd_mathiot1989_1989_None,,Ev+0.26,,,varied the pulse height and the pulse width at the same time.,,"FZ,CZ",boron,thermal,,,,1.65e5*T**2*exp(-0.287/kT),,,,,2.6e-17*exp(-0.027/kT),,,,,,,,,,,,,,,,,,
811,['S'],pettersson1990,pettersson,1990,['s'],d,S_s,None,Electric-field-enhanced electron emission from isolated sulfur and selenium donors in silicon,10.1103/PhysRevB.42.1381,DLTS,S_sd_pettersson1990_1990_None,Ec-0.29,Ec-0.31,,,Depended on electric field,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
816,['S'],pettersson1990,pettersson,1990,['s'],dd,S_s,None,Electric-field-enhanced electron emission from isolated sulfur and selenium donors in silicon,10.1103/PhysRevB.42.1381,DLTS,S_sdd_pettersson1990_1990_None,Ec-0.59,,,,Depended on electric field,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
99,['Se'],pettersson1990,pettersson,1990,['s'],d,Se_s,None,Electric-field-enhanced electron emission from isolated sulfur and selenium donors in silicon,10.1103/PhysRevB.42.1381,DLTS,Se_sd_pettersson1990_1990_None,Ec-0.29,Ec-0.31,,,Depended on electric field,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1083,['Fe'],zoth1990,zoth,1990,['i'],d,Fe_i,None,"A fast, preparation-free method to detect iron in silicon",10.1063/1.345063,SPV,Fe_id_zoth1990_1990_None,,,,,Value at 300 K.,,,,,,,,,,,,,,,3.26e-14,,,,,,,,,5.5e-07,,,,,,,
103,['Se'],pettersson1990,pettersson,1990,['s'],dd,Se_s,None,Electric-field-enhanced electron emission from isolated sulfur and selenium donors in silicon,10.1103/PhysRevB.42.1381,DLTS,Se_sdd_pettersson1990_1990_None,Ec-0.54,Ec-0.59,,,Depended on electric field,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1150,['W'],boughaba1991,boughaba,1991,['i'],,W_i,None,Deep level transient spectroscopy characterization of tungsten‐related deep levels in silicon,10.1063/1.347708,DLTS-F,W_i_boughaba1991_1991_None,Ev+0.33,,,,,,"CZ, FZ",boron,thermal,1.2e-14,,,5e7*T**2*exp(-0.33/kT),100,3,,,,,,170,,,,,,,,,,,0,5 ms,,,
503,['Ti'],tilly1991,tilly,1991,['i'],a,Ti_i,Ec-(0.077-1.47e-4*T),Electrical and optical properties of titanium-related centers in silicon,10.1103/PhysRevB.43.9171,DLTS-Cr,Ti_ia_tilly1991_1991_Ec-(0.077-1.47e-4*T),Ec-0.077,Ec-0.08,,,Comments on both the previous defect asignment and charges assignment being vague,,,"boron, phosphorus",ion implantation,,,,,,,,,,,1.60E-15,,,,,,,,,,,,,,,,
419,['Mo'],zhou1991,zhou,1991,['i'],d,Mo_i,None,Physical Behaviour of 4d Transition Metal Impurity in Silicon,10.4028/www.scientific.net/MSF.38-41.457,DLTS,Mo_id_zhou1991_1991_None,Ev+0.36,,,,"DLTS peak at 180K. Resistivity 1-300 Ohm.cm. DLTS. Irradiated some samples with electrons of energy 5MeV. Also saw an acceptor level at Ec-0.53. Claims this is a substitutionary site, other authors disagree.",,"FZ, CZ","aluminium, boron, gallium, phosphorus, tin",,,,,,,,,,,,,,,,,,,,,,,,,,,,
478,['Ti'],tilly1991,tilly,1991,['i'],d,Ti_i,Ec-(0.268+3.42e-4*T),Electrical and optical properties of titanium-related centers in silicon,10.1103/PhysRevB.43.9171,DLTS-Cr,Ti_id_tilly1991_1991_Ec-(0.268+3.42e-4*T),Ec-0.255,Ec-0.266,,,Comments on both the previous defect asignment and charges assignment being vague. Capture cross section values manually extracted from graph,,,"boron, phosphorus",ion implantation,,,,,,,,,,,1.57e-14*exp(0.011/k/T),,,,,,,,,,,,,,,,
417,['Mo'],hamaguchi1991,hamaguchi,1991,['i'],d,Mo_i,None,Deep Levels Associated with Molybdenum in Silicon,10.1143/JJAP.30.L1837,"DLTS, DLTS-Mo, LS-N",Mo_id_hamaguchi1991_1991_None,Ev+0.31,,,,"DLTS peak at 170K. Resistivity 10 Ohm.cm. For FZ Mo was spun on, and thermally diffused. For CZ it was introduced into the melt. Both dopants were used for CZ and FZ. Found 3 other levels related to Mo; Ev+0.27, Ec-0.34, Ec-0.58 and not Mo and dopant pairing.",,"FZ, CZ","boron, phosphorus","diffused, melt",,,,,10,,,,,,,,,,,,,,,,,,,,,,
418,['Mo'],pettersson1991,pettersson,1991,['i'],d,Mo_i,Ev+0.296 + 2.7e-5*T,Electrical and optical properties of molybdenum and tungsten related defects in silicon,10.1088/0268-1242/6/4/002,"DLTS, DC-S",Mo_id_pettersson1991_1991_Ev+0.296 + 2.7e-5*T,Ev+0.292,Ev+0.296,,,"DLTS peak at 180K. Capture cross section measured of 50 deg from 150 to 200 deg. Claims not a substitutional site. In a similar publication showing the same data a year later. DOI;10.1557/PROC-262-489. On Zhou's result of extra energy levels they say ""Although, in principle, this level could originate from three different defects we think there are good reasons to believe that the midgap level is a kind of process induced built-in defect which has to be studied further before a correct chemical identification can be performed.""",,"FZ, CZ","boron, phosphorus",,,,,,,,,,8.38E-16 * exp(0.004/kT),,,,,,,,,,,,,,,,,,
1170,['W'],boughaba1991,boughaba,1991,['s'],,W_s,None,Deep level transient spectroscopy characterization of tungsten‐related deep levels in silicon,10.1063/1.347708,DLTS-F,W_s_boughaba1991_1991_None,Ev+0.55,,,,,,"CZ, FZ",boron,thermal,3.4e-15,,,1.6e7*T**2*exp(-0.55/kT),100,3,,,,,,275,,,,,,,,,,,0,5 ms,,,
1155,['W'],ando1991,ando,1991,[''],,W_,None,Deep‐level transient spectroscopy on p‐type silicon crystals containing tungsten impurities,10.1063/1.350196,DLTS,W__ando1991_1991_None,Ev+0.4,,,,,,CZ,boron,"melt, thermal",,,,,0.1,,,,,,,220,,,,,,,,,,,,,,,
77,"['H', 'V']",sadoh1991,sadoh,1991,"['i', 's']",,H_iV_s,None,Diffusion of vanadium in silicon,10.1063/1.105154,DLTS,H_iV_s_sadoh1991_1991_None,Ev+0.49,,,,,,FZ,phosphorus,thermal,,,,,10-100,,,,,,,,,,,,,,,,,,,,,,
746,"['B', 'Fe']",gao1991,gao,1991,"['s', 'i']",d,B_sFe_i,None,Annealing and profile of interstitial iron in boron-doped silicon,10.1063/1.106103,DLTS,B_sFe_id_gao1991_1991_None,Ev+0.095,,,,catpure cross section determined at 55 K,,FZ,boron,,1.5e-13,,,,,,,,,,,,,,,,,,,,,,,,,,
494,['Ti'],tilly1991,tilly,1991,['i'],dd,Ti_i,Ev+(0.258-3.86e-5*T),Electrical and optical properties of titanium-related centers in silicon,10.1103/PhysRevB.43.9171,DLTS-Cr,Ti_idd_tilly1991_1991_Ev+(0.258-3.86e-5*T),Ev+0.267,Ev+0.258,,,Comments on both the previous defect asignment and charges assignment being vague. Capture cross section values manually extracted from graph,,,"boron, phosphorus",ion implantation,,,,,,,,,2.17e-17*exp(-0.01/k/T),,,,,,,,,,,,,,,,,,
46,['V'],tilly1991a,tilly,1991,['i'],a,V_i,Ec-(0.207+1.97e-4*T),Electrical and optical properties of vanadium-related centers in silicon,10.1103/PhysRevB.44.12809,DLTS-Cr,V_ia_tilly1991a_1991_Ec-(0.207+1.97e-4*T),Ec-0.204,Ec-0.208,,,Comments on both the previous defect asignment and charges assignment being vague,,,"boron, phosphorus",ion implantation,,,,,,,,,,,1.6e-16*exp(0.0037/kT),,,,,,,,,,,,,,,,
1160,['W'],pettersson1991,pettersson,1991,[''],d,W_,Ev+0.383-5.2e-5*T,Electrical and optical properties of molybdenum and tungsten related defects in silicon,10.1088/0268-1242/6/4/002,"DLTS, DC-S",W_d_pettersson1991_1991_Ev+0.383-5.2e-5*T,Ev+0.4,Ev+0.382,,,DLTS peak at 180K. emission rate taken from digitisation.,,"FZ, CZ","boron, phosphorus",,,,,2.98e6*T**2*exp(-0.397/kT),,,,,1.15e-15 * exp(-0.018/kT),,,,,,,,,,,,,,,,,,
537,['Ru'],zhou1991,zhou,1991,['i'],d,Ru_i,None,Physical Behaviour of 4d Transition Metal Impurity in Silicon,10.4028/www.scientific.net/MSF.38-41.457,DLTS,Ru_id_zhou1991_1991_None,Ev+0.34,,,,,,"FZ, CZ","aluminium, boron, gallium, phosphorus, tin",,,,,,,,,,,,,,,,,,,,,,,,,,,,
1084,['Fe'],gao1991,gao,1991,['i'],d,Fe_i,None,Annealing and profile of interstitial iron in boron-doped silicon,10.1063/1.106103,DLTS,Fe_id_gao1991_1991_None,Ev+0.43,,,,catpure cross section determined at 250 K,,FZ,boron,,2.7e-17,,,,,,,,,,,,,,,,,,,,,,,,,,
1151,['W'],boughaba1991_1,boughaba,1991,['i'],,W_i,None,Deep level transient spectroscopy characterization of tungsten‐related deep levels in silicon,10.1063/1.347708,DLTS-F,W_i_boughaba1991_1_1991_None,Ev+0.22,,,,"Linked to the boughaba1991 in W_i_.srh, but not the same defect. The concentrations of both were seen to scale with each other.",,"CZ, FZ",boron,thermal,9.4e-15,,,4.4e7*T**2*exp(-0.22/kT),100,3,,,,,,125,,,,,,,,,,,0,5 ms,,,
41,['V'],tilly1991a,tilly,1991,['i'],dd,V_i,Ev+(0.356-1.43e-7*T),Electrical and optical properties of vanadium-related centers in silicon,10.1103/PhysRevB.44.12809,DLTS-Cr,V_idd_tilly1991a_1991_Ev+(0.356-1.43e-7*T),Ev+0.447,Ev+0.359,,,Comments on both the previous defect asignment and charges assignment being vague. Capture cross section values manually extracted from graph,,,"boron, phosphorus",ion implantation,,,,,,,,,6.47e-17*exp(-0.088/kT),,,,,,,True,,,,,,,,,,,
67,['V'],tilly1991a,tilly,1991,['i'],d,V_i,Ec-(0.483-1.77e-4*T),Electrical and optical properties of vanadium-related centers in silicon,10.1103/PhysRevB.44.12809,DLTS-Cr,V_id_tilly1991a_1991_Ec-(0.483-1.77e-4*T),Ec-0.469,Ec-0.485,,,Comments on both the previous defect asignment and charges assignment being vague. Capture cross section values manually extracted from graph,,,"boron, phosphorus",ion implantation,,,,,,,,,,,8.27e-15*exp(0.016/kT),,,,,,,,,,,,,,,,
586,['H'],holm1991,holm,1991,['i'],d,H_i,None,Deep state of hydrogen in crystalline silicon: Evidence for metastability,10.1103/PhysRevLett.66.2360,DLTS,H_id_holm1991_1991_None,Ec-0.16,,,,"Corrected for field effects. Took the capture rate from DLTS measurements from irmscher1984, while the above repored are capture rates from minority carrier.",,,,,,>4e-8/1.2e7,,,,,,,,,,,,,,,,,,,,,,,,,
1171,['W'],boughaba1991_1,boughaba,1991,['s'],,W_s,None,Deep level transient spectroscopy characterization of tungsten‐related deep levels in silicon,10.1063/1.347708,DLTS,W_s_boughaba1991_1_1991_None,Ec-0.59,,,,"Level near midgap, so did different analysis which relocated level from Ec-0.53 to Ec-0.59. Same defect as boughaba1991 in W_s_.srh.",,"CZ, FZ",phosphorus,thermal,1.7e-14,6.6e-16,,6e6*T**2*exp(-0.53/kT),100,3,,,,,,275,,,,,,,,,,,0,5 ms,,,
42,['V'],sadoh1992,sadoh,1992,['i'],dd,V_i,Ev+0.34,Deep levels of vanadium and vanadium‐hydrogen complex in silicon,10.1063/1.352353,DLTS-Cr,V_idd_sadoh1992_1992_Ev+0.34,Ev+0.46,,,,,,"CZ, FZ","boron, phosphorus",thermal,,,,,10-100,,,,1.16e-16*exp(-0.12/kT),,,,,,,,,,,,,,,,,,
68,['V'],sadoh1992,sadoh,1992,['i'],d,V_i,Ec-0.45,Deep levels of vanadium and vanadium‐hydrogen complex in silicon,10.1063/1.352353,DLTS-Cr,V_id_sadoh1992_1992_Ec-0.45,Ec-0.45,,,,Measured capture cross section over a very narrow range from 210-260K.,,"CZ, FZ","boron, phosphorus",thermal,,,,,10-100,,,,,,5.3e-15,,,,,,,,,,,,,,,,
47,['V'],sadoh1992,sadoh,1992,['i'],a,V_i,Ec-0.2,Deep levels of vanadium and vanadium‐hydrogen complex in silicon,10.1063/1.352353,DLTS-Cr,V_ia_sadoh1992_1992_Ec-0.2,Ec-0.2,,,,,,"CZ, FZ","boron, phosphorus",thermal,,,,,10-100,,,,,,1.2e-16,,,,,,,,,,,,,,,,
517,['Pt'],lemke1994,lemke,1994,[''],a,Pt_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Pt_a_lemke1994_1994_None,Ec-0.23,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 110K,,FZ,"boron, phosphorus",diffusion,,>1e-8/1e7,,,,,,,,,,110.0,,,,,,,Pt_s_a.srh,>1e-8,,,,,,,
992,['Ta'],lemke1994,lemke,1994,[''],dd,Ta_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ta_dd_lemke1994_1994_None,,Ev+0.19,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 100K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,5.5e-10/1e7,,,100.0,,,,,,,Ta_i_dd.srh,,5.5e-10,,,,,,
63,['V'],lemke1994,lemke,1994,[''],a,V_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",V_a_lemke1994_1994_None,,Ec-0.16,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 140K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,,,1.2e-9/1e7,140.0,,,,,,,V_i_a.srh,1.2e-09,,,,,,,
59,['V'],lemke1994,lemke,1994,[''],dd,V_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",V_dd_lemke1994_1994_None,,Ev+0.31,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,4e-12/1e7,,,200.0,,,,,,,V_i_dd.srh,,4e-12,,,,,,
56,['V'],lemke1994,lemke,1994,[''],d,V_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",V_d_lemke1994_1994_None,Ec-0.43,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,>5e-8/1e7,,,,,,,,,,200.0,,,,,,,V_i_d.srh,>5e-8,,,,,,,
668,['Mn'],lemke1994,lemke,1994,[''],a,Mn_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Mn_a_lemke1994_1994_None,Ec-0.11,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 70K,,FZ,"boron, phosphorus",diffusion,,5e-8/1e7,,,,,,,,,,70.0,,,,,,,Mn_i_a.srh,,,,,,,,
696,['Cr'],nakashima1994,nakashima,1994,['i'],d,Cr_i,None,Diffusion and electrical properties of 3d transition-metal impurity series in silicon,10.4028/www.scientific.net/MSF.143-147.761,DLTS-Cr,Cr_id_nakashima1994_1994_None,,Ec-0.22,,,Measured at 120 K.,,,,,,,,,,,,,,,1.4e-14,,,,,,,,,,,,,,,,
867,['Au'],lemke1994,lemke,1994,[''],a,Au_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Au_a_lemke1994_1994_None,,Ec-0.55,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 300K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,,,1.6e-9/1e7,300.0,,,,,,,,1.6e-09,,,,,,,
1143,['Nb'],lemke1994,lemke,1994,[''],d,Nb_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Nb_d_lemke1994_1994_None,Ec-0.62,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 250K,,FZ,"boron, phosphorus",diffusion,,>1e-8/1e7,,,,,,,,,,250.0,,,,,,,Nb_i_d.srh,,,,,,,,
514,['Pt'],lemke1994,lemke,1994,[''],dd,Pt_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Pt_dd_lemke1994_1994_None,,Ev+0.07,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 65K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,2e-10/1e7,,,65.0,,,,,,,Pt_s_dd.srh,,2e-10,,,,,,
684,['Mn'],lemke1994,lemke,1994,[''],d,Mn_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Mn_d_lemke1994_1994_None,Ec-0.43,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,>5e-8/1e7,,,,,,,,,,200.0,,,,,,,Mn_i_d.srh,,,,,,,,
1097,['Fe'],lemke1994,lemke,1994,[''],d,Fe_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Fe_d_lemke1994_1994_None,,Ev+0.39,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,3e-10/1e7,,,200.0,,,,,,,Fe_i_d.srh,,3e-10,,,,,,
209,['Rh'],lemke1994,lemke,1994,[''],a,Rh_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Rh_a_lemke1994_1994_None,Ec-0.31,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 150K,,FZ,"boron, phosphorus",diffusion,,>3e-8/1e7,,,,,,,,,,150.0,,,,,,,Rh_s_a.srh,>3e-8,,,,,,,
985,['Ta'],lemke1994,lemke,1994,[''],d,Ta_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ta_d_lemke1994_1994_None,Ec-0.58,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 250K,,FZ,"boron, phosphorus",diffusion,,>7e-8/1e7,,,,,,,,,,250.0,,,,,,,Ta_i_d.srh,>7e-8,,,,,,,
991,['Ta'],lemke1994,lemke,1994,[''],a,Ta_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ta_a_lemke1994_1994_None,,Ec-0.22,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 140K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,,,3e-10/1e7,140.0,,,,,,,Ta_i_a.srh,3e-10,,,,,,,
296,['Cu'],lemke1994,lemke,1994,[''],aa,Cu_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Cu_aa_lemke1994_1994_None,,Ec-0.16,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 100K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,,,1.1e-10/1e7,100.0,,,,,,,Cu_s_aa.srh,1.1e-10,,,,,,,
299,['Cu'],lemke1994,lemke,1994,[''],a,Cu_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Cu_a_lemke1994_1994_None,Ev+0.46,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 230K,,FZ,"boron, phosphorus",diffusion,>2e-8/1e7,,,,,,,,,,,230.0,,,,,,,Cu_s_a.srh,,>2e-8,,,,,,
405,['Ag'],lemke1994,lemke,1994,[''],a,Ag_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ag_a_lemke1994_1994_None,,Ec-0.55,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 300K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,,,1.3e-9/1e7,300.0,,,,,,,Ag_s_a.srh,1.3e-09,,,,,,,
1085,['Fe'],nakashima1994,nakashima,1994,['i'],d,Fe_i,None,Diffusion and electrical properties of 3d transition-metal impurity series in silicon,10.4028/www.scientific.net/MSF.143-147.761,DLTS,Fe_id_nakashima1994_1994_None,Ev+0.438,Ev+0.40,,,,,FZ,boron,thermal,,,,,10,,,,1.8e-16*exp(-0.038/k/T),,,,,,,,,,,,,,,,,,
432,['Mo'],lemke1994,lemke,1994,[''],d,Mo_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Mo_d_lemke1994_1994_None,,Ev+0.28,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 110K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,1.1e-8/1e7,,,200,,,,,,,Mo_i_d.srh,,1.1e-08,,,,,,
717,['Cr'],lemke1994,lemke,1994,[''],d,Cr_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Cr_d_lemke1994_1994_None,Ec-0.23,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 110K,,FZ,"boron, phosphorus",diffusion,,>10e-8/1e7,,,,,,,,,,110.0,,,,,,,Cr_i_d.srh,>10e-8,,,,,,,
975,['Hf'],lemke1994,lemke,1994,[''],dd,Hf_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Hf_dd_lemke1994_1994_None,,Ev+0.32,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 250K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,7e-11/1e7,,,250.0,,,,,,,Hf_i_dd.srh,,7e-11,,,,,,
974,['Hf'],lemke1994,lemke,1994,[''],a,Hf_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Hf_a_lemke1994_1994_None,Ec-0.1,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 65K,,FZ,"boron, phosphorus",diffusion,,>2e-7/1e7,,,,,,,,,,65.0,,,,,,,Hf_i_a.srh,>2e-7,,,,,,,
536,['Ru'],lemke1994,lemke,1994,[''],d,Ru_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ru_d_lemke1994_1994_None,,Ev+0.26,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 150K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,1e-8/1e7,,,150.0,,,,,,,Ru_i_d.srh,,1e-8,,,,,,
391,['Ag'],lemke1994,lemke,1994,[''],d,Ag_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ag_d_lemke1994_1994_None,,Ev+0.37,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 170K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,1e-8/1e7,,,170.0,,,,,,,Ag_s_d.srh,,1e-8,,,,,,
644,['Mn'],lemke1994,lemke,1994,[''],dd,Mn_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Mn_dd_lemke1994_1994_None,,Ev+0.27,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,2e-11/1e7,,,200.0,,,,,,,Mn_i_dd.srh,,2e-11,,,,,,
1161,['W'],lemke1994,lemke,1994,[''],d,W_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",W_d_lemke1994_1994_None,,Ev+0.39,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,6.3e-9/1e7,,,200.0,,,,,,,,,6.3e-09,,,,,,
976,['Hf'],lemke1994,lemke,1994,[''],d,Hf_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Hf_d_lemke1994_1994_None,Ec-0.4,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 180K,,FZ,"boron, phosphorus",diffusion,,>3e-7/1e7,,,,,,,,,,180.0,,,,,,,Hf_i_d.srh,>3e-7,,,,,,,
524,['Pt'],lemke1994,lemke,1994,[''],d,Pt_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Pt_d_lemke1994_1994_None,,Ev+0.3,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 160K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,8e-9/1e7,,,160.0,,,,,,,Pt_s_d.srh,,8e-9,,,,,,
621,['Os'],lemke1994,lemke,1994,[''],d,Os_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Os_d_lemke1994_1994_None,,Ev+0.3,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,1e-8/1e7,,,200.0,,,,,,,Os_i_d.srh,,1e-8,,,,,,
500,['Ti'],lemke1994,lemke,1994,[''],a,Ti_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ti_a_lemke1994_1994_None,Ec-0.07,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 50K,,FZ,"boron, phosphorus",diffusion,,>1e-7/1e7,,,,,,,,,,50.0,,,,,,,Ti_i_a.srh,1e-7,,,,,,,
268,['Cu'],lemke1994,lemke,1994,[''],d,Cu_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Cu_d_lemke1994_1994_None,Ev+0.23,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 100K,,FZ,"boron, phosphorus",diffusion,,>1e-8/1e7,,,,,,,,,,100.0,,,,,,,Cu_s_d.srh,>1e-8,,,,,,,
90,['Zr'],lemke1994,lemke,1994,[''],dd,Zr_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Zr_dd_lemke1994_1994_None,,Ev+0.32,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 250K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,1.8e-10/1e7,,,250.0,,,,,,,Zr_i_dd.srh,,1.8e-10,,,,,,
1240,['Ni'],lemke1994,lemke,1994,[''],aa,Ni_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ni_aa_lemke1994_1994_None,Ec-0.06,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 45K,,FZ,"boron, phosphorus",diffusion,,5e-11/1e7,,,,,,,,,,45.0,,,,,,,Ni_s_aa.srh,,,,,,,,
1244,['Re'],lemke1994,lemke,1994,[''],a,Re_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Re_a_lemke1994_1994_None,Ec-0.07,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 45K,,FZ,"boron, phosphorus",diffusion,,8e-9/1e7,,,,,,,,,,45.0,,,,,,,Re_i_a.srh,8e-9,,,,,,,
1246,['Re'],lemke1994,lemke,1994,[''],d,Re_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Re_d_lemke1994_1994_None,,Ec-0.35,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,,,8.2e-9/1e7,200.0,,,,,,,Re_i_d.srh,8.2e-09,,,,,,,
89,['Zr'],lemke1994,lemke,1994,[''],a,Zr_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Zr_a_lemke1994_1994_None,Ec-0.13,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 70K,,FZ,"boron, phosphorus",diffusion,,>1e-7/1e7,,,,,,,,,,70.0,,,,,,,,>1e-7,,,,,,,
482,['Ti'],lemke1994,lemke,1994,[''],dd,Ti_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ti_dd_lemke1994_1994_None,,Ev+0.28,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,1e-10/1e7,,,200.0,,,,,,,Ti_i_dd.srh,,1e-10,,,,,,
441,['Sc'],lemke1994,lemke,1994,[''],ddd,Sc_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Sc_ddd_lemke1994_1994_None,,Ev+0.2,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 150K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,1.2e-12/1e7,,,150.0,,,,,,,Sc_i_ddd.srh,,1.2e-12,,,,,,
437,['Sc'],lemke1994,lemke,1994,[''],dd,Sc_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Sc_dd_lemke1994_1994_None,Ec-0.5,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 230K,,FZ,"boron, phosphorus",diffusion,,>1e-7/1e7,,,,,,,,,,230.0,,,,,,,Sc_i_dd.srh,>1e-7,,,,,,,
828,['Co'],lemke1994,lemke,1994,[''],a,Co_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Co_a_lemke1994_1994_None,Ec-0.41,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,>2e-8/1e7,,,,,,,,,,200.0,,,,,,,Co_s_a.srh,>2e-8,,,,,,,
819,['Co'],lemke1994,lemke,1994,[''],d,Co_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Co_d_lemke1994_1994_None,,Ev+0.4,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,7e-11/1e7,,,200.0,,,,,,,Co_s_d.srh,,7e-11,,,,,,
1233,['Ni'],lemke1994,lemke,1994,[''],a,Ni_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ni_a_lemke1994_1994_None,,Ec-0.38,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,,,9e-10/1e7,200.0,,,,,,,Ni_s_a.srh,9e-10,,,,,,,
1178,['Pd'],lemke1994,lemke,1994,[''],d,Pd_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Pd_d_lemke1994_1994_None,,Ev+0.29,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 200K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,1.1e-8/1e7,,,200.0,,,,,,,Pd_s_d.srh,,1.1e-08,,,,,,
540,['Ru'],lemke1994,lemke,1994,[''],a,Ru_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ru_a_lemke1994_1994_None,,Ec-0.14,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 100K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,,,1.3e-9/1e7,100.0,,,,,,,Ru_i_a.srh,1.3e-09,,,,,,,
1186,['Pd'],lemke1994,lemke,1994,[''],a,Pd_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Pd_a_lemke1994_1994_None,Ec-0.2,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 130K,,FZ,"boron, phosphorus",diffusion,,>3e-8/1e7,,,,,,,,,,130.0,,,,,,,Pd_s_a.srh,>3e-8,,,,,,,
202,['Rh'],lemke1994,lemke,1994,[''],d,Rh_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Rh_d_lemke1994_1994_None,Ec-0.58,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 290K,,FZ,"boron, phosphorus",diffusion,,>4e-8/1e7,,,,,,,,,,290.0,,,,,,,Rh_s_d.srh,>4e-8,,,,,,,
474,['Ti'],lemke1994,lemke,1994,[''],d,Ti_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ti_d_lemke1994_1994_None,Ec-0.27,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 160K,,FZ,"boron, phosphorus",diffusion,,>2e-7/1e7,,,,,,,,,,160.0,,,,,,,Ti_i_d.srh,>2e-7,,,,,,,
440,['Sc'],lemke1994,lemke,1994,[''],d,Sc_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Sc_d_lemke1994_1994_None,Ec-0.21,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 90K,,FZ,"boron, phosphorus",diffusion,,5e-8/1e7,,,,,,,,,,90.0,,,,,,,,5e-8,,,,,,,
878,['Au'],lemke1994,lemke,1994,[''],d,Au_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Au_d_lemke1994_1994_None,,Ev+0.32,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 170K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,1.2e-8/1e7,,,170.0,,,,,,,Au_s_d.srh,,1.2e-08,,,,,,
237,['Ir'],lemke1994,lemke,1994,[''],d,Ir_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ir_d_lemke1994_1994_None,Ec-0.62,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 290K,,FZ,"boron, phosphorus",diffusion,,>6e-8/1e7,,,,,,,,,,290.0,,,,,,,Ir_i_d.srh,,,,,,,,
1147,['Nb'],lemke1994,lemke,1994,[''],dd,Nb_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Nb_dd_lemke1994_1994_None,,Ev+0.18,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 100K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,3.4999999999999997E-16,,,100.0,,,,,,,Nb_i_dd.srh,,,,,,,,
241,['Ir'],lemke1994,lemke,1994,[''],a,Ir_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ir_a_lemke1994_1994_None,Ec-0.24,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 150K,,FZ,"boron, phosphorus",diffusion,,>5e-8/1e7,,,,,,,,,,150.0,,,,,,,Ir_i_a.srh,,,,,,,,
1187,['Pd'],lemke1994,lemke,1994,[''],dd,Pd_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Pd_dd_lemke1994_1994_None,,Ev+0.12,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 80K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,8e-10/1e7,,,80.0,,,,,,,Pd_s_dd.srh,,8e-10,,,,,,
92,['Zr'],lemke1994,lemke,1994,[''],d,Zr_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Zr_d_lemke1994_1994_None,Ec-0.42,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 180K,,FZ,"boron, phosphorus",diffusion,,>2e-7/1e7,,,,,,,,,,180.0,,,,,,,Zr_i_d.srh,>2e-7,,,,,,,
624,['Os'],lemke1994,lemke,1994,[''],a,Os_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Os_a_lemke1994_1994_None,,Ec-0.22,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 130K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,,,6e-10/1e7,130.0,,,,,,,Os_i_a.srh,6e-10,,,,,,,
1226,['Ni'],lemke1994,lemke,1994,[''],d,Ni_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Ni_d_lemke1994_1994_None,Ev+0.17,,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 90K,,FZ,"boron, phosphorus",diffusion,>1e-8/1e7,,,,,,,,,,,90.0,,,,,,,Ni_s_d.srh,,,,,,,,
1148,['Nb'],lemke1994,lemke,1994,[''],a,Nb_,None,Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float Zone Technique,,"DLTS-MeCr, TS-C",Nb_a_lemke1994_1994_None,,Ec-0.28,,978-1-56677-042-2,Assumed thermal velocity of 1e7 measured at 140K,,FZ,"boron, phosphorus",diffusion,,,,,,,,,,,1e-10/1e7,140.0,,,,,,,Nb_i_a.srh,1e-10,,,,,,,
664,['Mn'],graff1995,graff,1995,['i'],d,Mn_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Mn_id_graff1995_1995_None,,Ec-0.42,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,9e-17 * exp(0),,,,,,,,,,,,,,,,
821,['Co'],graff1995_1,graff,1995,[''],d,Co_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Co_d_graff1995_1_1995_None,Ev+0.23,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
792,"['B', 'Zn']",graff1995,graff,1995,"['s', 'i']",,B_sZn_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",B_sZn_i_graff1995_1995_None,Ev+0.09,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
179,"['Fe', 'Ga']",graff1995,graff,1995,"['i', 's']",d,Fe_iGa_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Fe_iGa_sd_graff1995_1995_None,Ev+0.14,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
180,"['Fe', 'Ga']",graff1995_1,graff,1995,"['i', 's']",d,Fe_iGa_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Fe_iGa_sd_graff1995_1_1995_None,Ev+0.24,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
820,['Co'],graff1995,graff,1995,[''],d,Co_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Co_d_graff1995_1995_None,Ev+0.41,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,4e-18,,,,,,,,,,,,,,,,,,,,,,,,,,
165,"['Al', 'Cr']",graff1995,graff,1995,"['s', 'i']",d,Al_sCr_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Al_sCr_id_graff1995_1995_None,Ev+0.45,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
680,"['Mn', 'Zn']",graff1995,graff,1995,"['i', 's']",d,Mn_iZn_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Mn_iZn_sd_graff1995_1995_None,Ev+0.18,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
754,"['B', 'Fe']",graff1995,graff,1995,"['s', 'i']",a,B_sFe_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",B_sFe_ia_graff1995_1995_None,Ec-0.23,,,,Taken from table 4.3 and table 1 in the appendix.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
841,['Co'],graff1995,graff,1995,['s'],d,Co_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,review,Co_sd_graff1995_1995_None,Ec-0.56,,,,Taken from table 3.6,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
705,"['B', 'Cr']",graff1995,graff,1995,"['s', 'i']",d,B_sCr_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",B_sCr_id_graff1995_1995_None,Ev+0.27,,,,Taken from table 4.6.,,,,,9.5e-16,,,,,,,,,,,,,,,,,,,,,,,,5e-17,,
660,['Mn4'],graff1995,graff,1995,['p'],d,Mn4_p,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Mn4_pd_graff1995_1995_None,Ec-0.28,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
512,['Pt'],graff1995,graff,1995,['s'],a,Pt_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Pt_sa_graff1995_1995_None,Ec-0.24,,,,Taken from table 4.10.,,,,,2.65e-14,267e-14,,,,,,,,,,,,,,,263e-14,,,,,,,,2.35e-14,,
838,['Co'],graff1995,graff,1995,['s'],aa,Co_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Co_saa_graff1995_1995_None,Ec-0.21,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
839,['Co'],graff1995_1,graff,1995,['s'],aa,Co_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, theory",Co_saa_graff1995_1_1995_None,Ec-0.35,,,,Taken from table 3.6,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
842,['Co'],graff1995_1,graff,1995,['s'],d,Co_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, theory",Co_sd_graff1995_1_1995_None,Ec-0.48,,,,Taken from table 3.6,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
697,['Cr'],graff1995,graff,1995,['i'],d,Cr_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Cr_id_graff1995_1995_None,,Ec-0.22,,,Taken from table 5.4. Note sigma_e is temperature independent.,,,,,,,,,,,,,,,6e-14 * exp(0),,,,,,,,,,,,,,,,
626,['Mn'],graff1995,graff,1995,['s'],a,Mn_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Mn_sa_graff1995_1995_None,Ec-0.43,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
730,"['Au', 'Cr']",graff1995,graff,1995,"['s', 'i']",d,Au_sCr_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Au_sCr_id_graff1995_1995_None,Ev+0.35,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
124,"['Al', 'Fe']",graff1995,graff,1995,"['s', 'i']",d,Al_sFe_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Al_sFe_id_graff1995_1995_None,Ev+0.19,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
479,['Ti'],graff1995,graff,1995,['i'],d,Ti_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ti_id_graff1995_1995_None,,Ec-0.27,,,,,,,,,,,,,,,,,,2e-14 * exp(-0.004/k/T),,,,,,,,,,,,,,,,
654,"['B', 'Mn']",graff1995,graff,1995,"['s', 'i']",d,B_sMn_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",B_sMn_id_graff1995_1995_None,Ec-0.55,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
532,['Pt'],graff1995,graff,1995,['s'],d,Pt_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Pt_sd_graff1995_1995_None,Ev+0.33,,,,Taken from table 4.10.,,,,,45.5*1e-16,1e-16,,,,,,,,,,,,,,,,,,,,,,,4.25e-15,,
504,['Ti'],graff1995,graff,1995,['i'],a,Ti_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ti_ia_graff1995_1995_None,Ec-0.08,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,5e-14,,,,,,,,,,,,,,,,,,,,,,,,,
630,['Mn'],graff1995,graff,1995,['i'],dd,Mn_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Mn_idd_graff1995_1995_None,,Ev+0.27,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,3.00E-18 * exp(-0.07/kT),,,,,,,,,,,,,,,,,,
848,['Co'],graff1995,graff,1995,['s'],a,Co_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Co_sa_graff1995_1995_None,Ec-0.41,,,,Taken from table 3.6,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
849,['Co'],graff1995_1,graff,1995,['s'],a,Co_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, theory",Co_sa_graff1995_1_1995_None,Ec-0.35,,,,Taken from table 3.6,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
650,['Mn'],graff1995,graff,1995,['s'],d,Mn_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Mn_sd_graff1995_1995_None,Ev+0.34,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
718,"['Cr', 'Zn']",graff1995,graff,1995,"['i', 's']",a,Cr_iZn_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Cr_iZn_sa_graff1995_1995_None,Ec-0.1,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
204,['Rh'],graff1995,graff,1995,['i'],,Rh_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Rh_i_graff1995_1995_None,Ec-0.13,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,2e-15,,,,,,,,,,,,,,,,,,,,,,,,,
685,"['Au', 'Mn']",graff1995,graff,1995,"['s', 'i']",a,Au_sMn_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Au_sMn_ia_graff1995_1995_None,Ec-0.24,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
175,"['Ga', 'Mn']",graff1995,graff,1995,"['s', 'i']",d,Ga_sMn_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ga_sMn_id_graff1995_1995_None,Ec-0.42,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
173,"['Cr', 'Ga']",graff1995,graff,1995,"['i', 's']",d,Cr_iGa_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Cr_iGa_sd_graff1995_1995_None,Ev+0.48,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
687,"['Au', 'Mn']",graff1995,graff,1995,"['s', 'i']",d,Au_sMn_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Au_sMn_id_graff1995_1995_None,Ev+0.57,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
125,"['Al', 'Fe']",graff1995_1,graff,1995,"['s', 'i']",d,Al_sFe_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Al_sFe_id_graff1995_1_1995_None,Ev+0.13,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
198,['Rh'],graff1995,graff,1995,['i'],d,Rh_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Rh_id_graff1995_1995_None,Ec-0.58,,,,Taken from table 5.9.,,,,,,2.1e-15,,,,,,,,,,,,,,,,,Rh_s_d.srh,,,,,,,,
495,['Ti'],graff1995,graff,1995,['i'],dd,Ti_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ti_idd_graff1995_1995_None,,Ev+0.28,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons. This value is different from others as it is an activation energy rather than the energy level.",,,,,,,,,,,,,4.00E-16 * exp(-0.04/kT),,,,,,,,,,,,,,,,,,
648,['Mn'],graff1995,graff,1995,['i'],a,Mn_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Mn_ia_graff1995_1995_None,Ec-0.13,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1e-15,,,,,,,,,,,,,,,,,,,,,,,,,
747,"['B', 'Fe']",graff1995,graff,1995,"['s', 'i']",d,B_sFe_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",B_sFe_id_graff1995_1995_None,Ev+0.1,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
907,['Au'],graff1995,graff,1995,['s'],d,Au_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Au_sd_graff1995_1995_None,,Ev+0.347,,,Taken from table 4.11.,,,,,,,,,,,,,2.7e-15,1e-15*(T)**(-2/2.5),2e-15*(T)**(-2/2.5),,,,,,,,,,,,,,,,
273,['Cu'],graff1995,graff,1995,['s'],d,Cu_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Cu_sd_graff1995_1995_None,Ev+0.23,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
1234,['Ni'],graff1995,graff,1995,[''],a,Ni_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ni_a_graff1995_1995_None,Ec-0.41,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
957,['Zn'],graff1995,graff,1995,['s'],a,Zn_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Zn_sa_graff1995_1995_None,Ev+0.32,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1238,['Ni'],graff1995_4,graff,1995,[''],a,Ni_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ni_a_graff1995_4_1995_None,Ev+0.16,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
462,"['Fe', 'In']",graff1995,graff,1995,"['i', 's']",d,Fe_iIn_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Fe_iIn_sd_graff1995_1995_None,Ev+0.16,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1237,['Ni'],graff1995_3,graff,1995,[''],a,Ni_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ni_a_graff1995_3_1995_None,Ev+0.22,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
392,['Ag'],graff1995,graff,1995,[''],d,Ag_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ag_d_graff1995_1995_None,Ev+0.4,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,8.6e-16,,,,,,,,,,,,,,,,,,Ag_s_d.srh,,,,,,,,
435,['Sc'],graff1995,graff,1995,['i'],d,Sc_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Sc_id_graff1995_1995_None,Ec-0.064,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,6e-15,,,,,,,,,,,,,,,,,,,,,,,,,
406,['Ag'],graff1995,graff,1995,[''],a,Ag_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ag_a_graff1995_1995_None,Ec-0.59,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,8.4e-19,,,,,,,,,,,,,,,,,Ag_s_a.srh,,,,,,,,
463,"['Fe', 'In']",graff1995_1,graff,1995,"['i', 's']",d,Fe_iIn_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Fe_iIn_sd_graff1995_1_1995_None,Ev+0.27,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1236,['Ni'],graff1995_2,graff,1995,[''],a,Ni_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ni_a_graff1995_2_1995_None,Ev+0.33,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1086,['Fe'],graff1995,graff,1995,['i'],d,Fe_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Fe_id_graff1995_1995_None,,Ev+0.38,,,Taken from table 1 in the appendix and equation 4.5.,,,,,,,,,,,,,3E-16 * exp(-0.05/kT),,,,,,,,,,,,,,,,,,
43,['V'],graff1995,graff,1995,['i'],dd,V_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",V_idd_graff1995_1995_None,,Ev+0.32,,,Taken from table 5.3,,,,,,,,,,,,,4.00E-18 * exp(-0.15/kT),,,,,,,,,,,,,,,,,,
293,['Cu'],graff1995,graff,1995,['s'],aa,Cu_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Cu_saa_graff1995_1995_None,Ec-0.16,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,2e-17,,,,,,,,,,,,,,,,,,,,,,,,,
891,['Au'],graff1995,graff,1995,['s'],a,Au_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Au_sa_graff1995_1995_None,,Ec-0.554,,,Taken from table 4.11.,,,,,,,,,,,,,6e-15/9*T**(-1.3/1.5),,1.4e-16,,,,,,,,,,,,,,,,
199,['Rh'],graff1995,graff,1995,['i'],a,Rh_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Rh_ia_graff1995_1995_None,Ec-0.34,,,,Taken from table 5.9.,,,,,,2.2e-15,,,,,,,,,,,,,,,,,Rh_s_a.srh,,,,,,,,
117,"['Al', 'Mn']",graff1995,graff,1995,"['s', 'i']",d,Al_sMn_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Al_sMn_id_graff1995_1995_None,Ec-0.45,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1173,['W'],graff1995_1,graff,1995,['s'],,W_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",W_s_graff1995_1_1995_None,Ev+0.41,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1235,['Ni'],graff1995_1,graff,1995,[''],a,Ni_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ni_a_graff1995_1_1995_None,Ec-0.35,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1172,['W'],graff1995,graff,1995,['s'],,W_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",W_s_graff1995_1995_None,Ec-0.22,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
281,['Cu'],graff1995,graff,1995,['s'],a,Cu_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Cu_sa_graff1995_1995_None,Ev+0.45,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
411,['Ag'],graff1995,graff,1995,[''],,Ag_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ag__graff1995_1995_None,Ev+0.36,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,3.6e-16,,,,,,,,,,,,,,,,,,Ag_s_d.srh,,,,,,,,
269,"['Cu', 'Cu']",graff1995,graff,1995,"['s', 'i']",d,Cu_iCu_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Cu_iCu_sd_graff1995_1995_None,Ev+0.1,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
412,['Ag'],graff1995_1,graff,1995,[''],,Ag_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ag__graff1995_1_1995_None,Ev+0.09,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,3.5e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
50,"['Au', 'V']",graff1995,graff,1995,"['s', 'i']",a,Au_sV_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Au_sV_ia_graff1995_1995_None,Ec-0.2,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
51,"['Au', 'V']",graff1995_1,graff,1995,"['s', 'i']",a,Au_sV_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Au_sV_ia_graff1995_1_1995_None,Ec-0.20,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
913,"['Au', 'Fe']",graff1995,graff,1995,"['s', 'i']",d,Au_sFe_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Au_sFe_id_graff1995_1995_None,Ev+0.42,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,2.6e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
420,['Mo'],graff1995,graff,1995,['i'],d,Mo_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Mo_id_graff1995_1995_None,Ev+0.29,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,5.5e-16,1.6e-14,,,,,,,,,,,,,,,,,,,,,,,,,
924,"['Au', 'Fe']",graff1995,graff,1995,"['s', 'i']",a,Au_sFe_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Au_sFe_ia_graff1995_1995_None,Ec-0.35,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,2e-15,,,,,,,,,,,,,,,,,,,,,,,,,
48,['V'],graff1995,graff,1995,['i'],a,V_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",V_ia_graff1995_1995_None,Ec-0.17,,,,Taken from table 5.3.,,,,,,2e-16,,,,,,,,,,,,,,,,,,,,,,,,,
987,['Ta'],graff1995_1,graff,1995,[''],d,Ta_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ta_d_graff1995_1_1995_None,Ec-0.47,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
986,['Ta'],graff1995,graff,1995,[''],d,Ta_,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Ta_d_graff1995_1995_None,Ec-0.23,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
69,['V'],graff1995,graff,1995,['i'],d,V_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",V_id_graff1995_1995_None,,Ec-0.45,,,Taken from table 5.3.,,,,,,,,,,,,,,,4.00E-16 * exp(-0/kT),,,,,,,,,,,,,,,,
72,"['V', 'Zn']",graff1995,graff,1995,"['i', 's']",d,V_iZn_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",V_iZn_sd_graff1995_1995_None,Ev+0.29,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
438,['Sc'],graff1995,graff,1995,['i'],dd,Sc_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Sc_idd_graff1995_1995_None,Ec-0.29,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,2e-13,,,,,,,,,,,,,,,,,,,,,,,,,
939,"['Fe', 'Zn']",graff1995,graff,1995,"['i', 's']",a,Fe_iZn_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Fe_iZn_sa_graff1995_1995_None,Ec-0.47,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
970,['Zn'],graff1995,graff,1995,['s'],aa,Zn_s,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Zn_saa_graff1995_1995_None,Ev+0.6,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,2.5e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
64,"['Au', 'V']",graff1995,graff,1995,"['s', 'i']",d,Au_sV_i,None,Metal impurities in silicon-device fabrication,10.1007/978-3-642-97593-6,"review, DLTS",Au_sV_id_graff1995_1995_None,Ev+0.42,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
698,['Cr'],mishra1996,mishra,1996,['i'],d,Cr_i,None,Identification of Cr in p-type silicon using the minority carrier lifetime measurement by the surface photovoltage method,10.1063/1.116574,"DLTS, LS-D",Cr_id_mishra1996_1996_None,Ec-0.22,,,,"no thermal velocity was provided, it was assumed a thermal velocity of electrons and holes was 2.046e7 and 1.688e7.",,,,,,,,,,,,,1.25e-6/1.688e7,,2.5e-6/2.046e7,,,,,,,,,,,,,,,,
706,"['B', 'Cr']",mishra1996,mishra,1996,"['s', 'i']",d,B_sCr_i,None,Identification of Cr in p-type silicon using the minority carrier lifetime measurement by the surface photovoltage method,10.1063/1.116574,"DLTS, LS-D",B_sCr_id_mishra1996_1996_None,Ev+0.27,,,,"no thermal velocity was provided, it was assumed a thermal velocity of 2.046e7.",,,,,,1.5e-6/2.046e7,,,,,,,,,,,,,,,,,,,,,,,,,
755,"['B', 'Fe']",walz1996,walz,1996,"['s', 'i']",a,B_sFe_i,Ec-0.29,On the recombination behaviour of iron in moderately boron-doped p-type silicon,10.1007/BF01594232,LS-DNM,B_sFe_ia_walz1996_1996_Ec-0.29,,,,,Lifetime analysis on FeB at a room temperature,,,,,,,,,,,,,3e-14,,2.5e-15,,,,,,,,,,,,,,,,
1189,['Pd'],sachse1997,sachse,1997,['s'],d,Pd_s,None,Trivalent behavior of palladium in silicon,10.1063/1.119899,DLTS-Cr,Pd_sd_sachse1997_1997_None,Ev+0.31,Ev+0.31,,,,,,boron,thermal,,,,,,,,,8e-16,,,165,,,,,,,,,,,,,,,
1004,['Unknown-quenched'],astrova1998_1,astrova,1998,[''],,Unknown-quenched_,None,Process induced deep-level defects in high purity silicon,10.1088/0268-1242/13/5/008,DLTS,Unknown-quenched__astrova1998_1_1998_None,Ec-0.54,,,,"Diffusions done with phosphorus, boron, aluminum, gallium. Only did slow cooling.",,FZ,"phosphorus, boron",thermal,,1e-15,,,250-300,,,,,,,,,,,,,,,,,,,,,,
892,['Au'],deixler1998,deixler,1998,['s'],a,Au_s,Ec-0.558,Laplace-transform deep-level transient spectroscopy studies of the G4 gold hydrogen complex in silicon,10.1063/1.122694,DLTS-Cr,Au_sa_deixler1998_1998_Ec-0.558,,,,,"245-302 K,",,CZ,phosphorus,,,,,,,-5 V,,,,,1e-16,,1 ms,,,,,,,,,,0 V,20 ms,,,
1003,['Unknown-quenched'],astrova1998,astrova,1998,[''],,Unknown-quenched_,None,Process induced deep-level defects in high purity silicon,10.1088/0268-1242/13/5/008,DLTS,Unknown-quenched__astrova1998_1998_None,Ec-0.28,,,,"Diffusions done with phosphorus, boron, aluminum, gallium. Only did slow cooling.",,FZ,"phosphorus, boron",thermal,,4e-17,,,250-300,,,,,,,,,,,,,,,,,,,,,,
584,"['Au', 'H']",deixler1998,deixler,1998,"['', '']",a,Au_H_,Ec-0.542,Laplace-transform deep-level transient spectroscopy studies of the G4 gold hydrogen complex in silicon,10.1063/1.122694,DLTS-LCr,Au_H_a_deixler1998_1998_Ec-0.542,,,,,"245-302 K,",,CZ,phosphorus,,,,,,,-5 V,,,8e-15,,6e-17,,1 ms,0.008,,,,,,,,,0 V,20 ms,,,
1005,['Unknown-quenched'],astrova1998_2,astrova,1998,[''],,Unknown-quenched_,None,Process induced deep-level defects in high purity silicon,10.1088/0268-1242/13/5/008,DLTS,Unknown-quenched__astrova1998_2_1998_None,Ec-0.34,,,,"Diffusions done with phosphorus, boron, aluminum, gallium. Only did slow cooling.",,FZ,"phosphorus, boron",thermal,,6e-14,,,250-300,,,,,,,,,,,,,,,,,,,,,,
587,['H'],nielsen1999a,nielsen,1999,['i'],d,H_i,None,Bond-centered hydrogen in silicon studied by in situ deep-level transient spectroscopy,10.1103/PhysRevB.60.1716,DLTS,H_id_nielsen1999a_1999_None,Ec-0.175,,,,Corrected for field effects.,,,,,,,0.005,,,,,,,,,,,,,,,,,,,,,,,,
756,"['B', 'Fe']",istratov1999,istratov,1999,"['s', 'i']",a,B_sFe_i,None,Iron and its complexes in silicon,10.1007/s003390050968,"DLTS, Hall, photoEPR, FTIR",B_sFe_ia_istratov1999_1999_None,Ec-0.26,,,,"Data from a review paper, taking many measurements at a range of temperatures. Points out DLTS is impact by capture cross section barrier heights, while EPR and hall affect measurements are not. At 55 K simga_e was 1.5e-13, sigma_p was 2e-14 were reported.",,,,,2e-14,4e-13,,,,,,,,,,,,,,,,,,,,,,,,,
329,"['H', 'Si', 'Si']",nielsen1999,nielsen,1999,"['', 'v', 'v']",a,H_Si_vSi_v,None,Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS,10.1016/S0921-4526(99)00437-8,DLTS-L,H_Si_vSi_va_nielsen1999_1999_None,Ec-0.43,,,,,,"FZ,CZ",phosphorus,ion implantation,,,,,"8,20",,,,,,,,,,,,,,,,,,,,,,
571,"['H2', 'Ni']",shiraishi1999_1,shiraishi,1999,"['', '']",,H2_Ni_,Ec-0.143,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,H2_Ni__shiraishi1999_1_1999_Ec-0.143,Ec-0.15,Ec-0.13,,,Out at 570 K for 2 hours,,"CZ, FZ",phosphorus,"melt, diffusion",,2.7999999999999996e-16,,,1-100,,,,,,0.0000000000000000048*exp(-0.02/kT),95.0,,,,,,,,,,,,0.024 s,,,
29,"['H', 'O', 'Si']",nielsen1999,nielsen,1999,"['', '', 'v']",,H_O_Si_v,None,Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS,10.1016/S0921-4526(99)00437-8,DLTS-L,H_O_Si_v_nielsen1999_1999_None,Ec-0.31,,,,correlated with EPR,,"FZ,CZ",phosphorus,ion implantation,,,,,"8,20",,,,,,,,,,,,,,,,,,,,,,
1202,['Ni'],shiraishi1999,shiraishi,1999,['s'],aa,Ni_s,Ec-0.024,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,Ni_saa_shiraishi1999_1999_Ec-0.024,Ec-0.08,Ec-0.03,,,,,"CZ, FZ",phosphorus,"melt, diffusion",,4.2000000000000004e-14,,,1-100,,,,,,5.8E-19 * exp(-0.05/kT)*exp(0.05/k/45),45.0,,,,,,,,,,,,0.024 s,,,
414,['Mo'],benton1999,benton,1999,[''],,Mo_,None,Behavior of Molybdenum in Silicon Evaluated for Integrated Circuit Processing,10.1149/1.1391868,DLTS,Mo__benton1999_1999_None,Ev+0.30,,,,"Measured lifetime, but did not extract minority capture cross sections.",,FZ,boron,ion implantation,5.5e-16,,,,10,,,,,,,,,,,,,,Mo_i_d.srh,,,,,,,,
1196,['Ni'],shiraishi1999,shiraishi,1999,['s'],a,Ni_s,Ec-0.216,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,Ni_sa_shiraishi1999_1999_Ec-0.216,Ec-0.39,Ec-0.31,,,,,"CZ, FZ",phosphorus,"melt, diffusion",,2.2e-16,,,1-100,,,,,,4.4e-17 * exp(-0.08/kT) * exp(0.08/k/237),237.0,,,,,,,,,,,,0.024 s,,,
570,"['H2', 'Ni']",shiraishi1999,shiraishi,1999,"['', '']",,H2_Ni_,Ev+0.415,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,H2_Ni__shiraishi1999_1999_Ev+0.415,Ev+0.47,Ev+0.47,,,Out at 500 K for 1 hours,,"CZ, FZ",boron,"melt, diffusion",5.5e-15,,,,1-100,,,,3.7e-16,,,235.0,,,,,,,NiH_-_d by scheffler2014,,,,,0.024 s,,,
1205,['Ni'],shiraishi1999,shiraishi,1999,['s'],d,Ni_s,Ev+0.145,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,Ni_sd_shiraishi1999_1999_Ev+0.145,Ev+0.15,Ev+0.15,,,,,"CZ, FZ",boron,"melt, diffusion",4.3e-15,,,,1-100,,,,2.2e-15,,,75.0,,,,,,,,,,,,0.024 s,,,
300,"['H', 'Si']",nielsen1999,nielsen,1999,"['', 'v']",a,H_Si_v,None,Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS,10.1016/S0921-4526(99)00437-8,DLTS-L,H_Si_va_nielsen1999_1999_None,Ec-0.443,,,,,,"FZ,CZ",phosphorus,ion implantation,,,,,"8,20",,,,,,,,,,,,,,,,,,,,,,
1215,['Ni'],shiraishi1999_1,shiraishi,1999,[''],,Ni_,Ev+0.196,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,Ni__shiraishi1999_1_1999_Ev+0.196,Ev+0.2,Ev+0.2,,,"Hydrogen related, as only appeared after a ""clean"" that is known to introduce hyrdrogen. Out at 500 K for 1 hours",,"CZ, FZ",boron,"melt, diffusion",2.6e-15,,,,1-100,,,,1.7e-15,,,105.0,,,,,,,,,,,,0.024 s,,,
748,"['B', 'Fe']",istratov1999,istratov,1999,"['s', 'i']",d,B_sFe_i,None,Iron and its complexes in silicon,10.1007/s003390050968,DLTS,B_sFe_id_istratov1999_1999_None,Ev+0.1,,,,"Data from a review paper, taking many measurements at a range of temperatures Points out DLTS is impact by capture cross section barrier heights, while EPR and hall affect measurements are not. sigma_h was measured at T = 300 K.",,,,,3e-14,4e-13,,,,,,,,,,,,,,,,,,,,,,,,,
1216,['Ni'],shiraishi1999_2,shiraishi,1999,[''],,Ni_,Ev+0.257,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,Ni__shiraishi1999_2_1999_Ev+0.257,Ev+0.32,Ev+0.32,,,"Hydrogen related, as only appeared after a ""clean"" that is known to introduce hyrdrogen. Out at 500 K for 1 hours",,"CZ, FZ",boron,"melt, diffusion",9.6e-15,,,,1-100,,,,9.9e-17,,,160.0,,,,,,,,,,,,0.024 s,,,
1217,['Ni'],shiraishi1999_3,shiraishi,1999,[''],,Ni_,Ec-0.329,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,Ni__shiraishi1999_3_1999_Ec-0.329,Ec-0.25,Ec-0.25,,,"Hydrogen related, as only appeared after a ""clean"" that is known to introduce hyrdrogen. Out at 570 K for 2 hours",,"CZ, FZ",phosphorus,"melt, diffusion",,6.6e-16,,,1-100,,,,,,1.2E-18,145.0,,,,,,,,,,,,0.024 s,,,
1218,['Ni'],shiraishi1999_4,shiraishi,1999,[''],,Ni_,Ec-0.468,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,Ni__shiraishi1999_4_1999_Ec-0.468,Ec-0.35,Ec-0.35,,,"Hydrogen related, as only appeared after a ""clean"" that is known to introduce hyrdrogen. Out at 570 K for 2 hours",,"CZ, FZ",phosphorus,"melt, diffusion",,2.8e-15,,,1-100,,,,,,1.8E-18,185.0,,,,,,,,,,,,0.024 s,,,
562,"['Hx', 'Ni']",shiraishi1999_1,shiraishi,1999,"['', '']",,Hx_Ni_,Ev+0.485,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,Hx_Ni__shiraishi1999_1_1999_Ev+0.485,Ev+0.56,Ev+0.56,,,x is 2 or 3. Out at 500 K for 1 hours,,"CZ, FZ",boron,"melt, diffusion",5.3e-15,,,,1-100,,,,2.2000000000000002e-16,,,275.0,,,,,,,NiH2_-_a by scheffler2014,,,,,0.024 s,,,
561,"['Hx', 'Ni']",shiraishi1999,shiraishi,1999,"['', '']",,Hx_Ni_,Ev+0.315,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,Hx_Ni__shiraishi1999_1999_Ev+0.315,Ev+0.37,Ev+0.37,,,x is 3 or 4. Out at 500 K for 1 hours,,"CZ, FZ",boron,"melt, diffusion",6.5e-15,,,,1-100,,,,2.3e-16,,,190.0,,,,,,,NiH3_-_a by scheffler2014,,,,,0.024 s,,,
554,"['H', 'Ni']",shiraishi1999_1,shiraishi,1999,"['', '']",,H_Ni_,Ec-0.543,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,H_Ni__shiraishi1999_1_1999_Ec-0.543,Ec-0.52,Ec-0.52,,,Out at 570 K for 2 hours,,"CZ, FZ",phosphorus,"melt, diffusion",,1.9e-15,,,1-100,,,,,,7E-16,270.0,,,,,,,NiH2_-_a by scheffler2014,,,,,0.024 s,,,
553,"['H', 'Ni']",shiraishi1999,shiraishi,1999,"['', '']",,H_Ni_,Ec-0.184,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,H_Ni__shiraishi1999_1999_Ec-0.184,Ec-0.16,Ec-0.16,,,Out at 570 K for 2 hours,,"CZ, FZ",phosphorus,"melt, diffusion",,1.8000000000000002e-16,,,1-100,,,,,,1.4E-17,110.0,,,,,,,HNi_-_a.srh,,,,,0.024 s,,,
1087,['Fe'],istratov1999,istratov,1999,['i'],d,Fe_i,None,Iron and its complexes in silicon,10.1007/s003390050968,"DLTS-Cr, Hall, PhCap, EPR",Fe_id_istratov1999_1999_None,Ev+0.425,Ev+0.38,,,"Data from a review paper, taking many measurements at a range of temperatures. Points out DLTS is impact by capture cross section barrier heights, while EPR  and hall affect measurements are not. The error in sigma_h was 0.5e16 and  0.005 for the temperature dependent exponent.",,,,,,,,,,,,,3.9e-16 * exp(-0.045/kT),,4e-14,,,,,,,,,,,,,,,,
1214,['Ni'],shiraishi1999,shiraishi,1999,[''],,Ni_,Ev+0.078,DLTS analysis of nickel_hydrogen complex defects in silicon,10.1016/S0921-5107(98)00280-3,DLTS-Cr,Ni__shiraishi1999_1999_Ev+0.078,Ev+0.08,Ev+0.08,,,"Hydrogen related, as only appeared after a ""clean"" that is known to introduce hyrdrogen. Out at 500 K for 1 hours",,"CZ, FZ",boron,"melt, diffusion",1.6e-15,,,,1-100,,,,1.1e-15,,,50.0,,,,,,,,,,,,0.024 s,,,
908,['Au'],graff2000,graff,2000,['s'],d,Au_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sd_graff2000_2000_None,Ev+0.34,,,,Taken from table 4.12. DLTS done at a temperature of 160K,,,,,2.5e-15,2.7e-15,0.02,,,,,,,,,,,,,,,,,,,,,,,,
465,"['Fe', 'In']",graff2000_1,graff,2000,"['i', 's']",d,Fe_iIn_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Fe_iIn_sd_graff2000_1_2000_None,Ev+0.27,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
240,['Ir'],graff2000,graff,2000,['s'],d,Ir_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ir_sd_graff2000_2000_None,Ec-0.62,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,7.2e-14,,,,,,,,,,,,,,,,,,,,,,,,,
925,"['Au', 'Fe']",graff2000,graff,2000,"['s', 'i']",a,Au_sFe_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sFe_ia_graff2000_2000_None,Ec-0.35,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,2e-15,,,,,,,,,,,,,,,,,,,,,,,,,
926,"['Au', 'Au']",graff2000,graff,2000,"['i', 's']",,Au_iAu_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_iAu_s_graff2000_2000_None,Ec-0.44,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
95,['Zr'],graff2000,graff,2000,['i'],dd,Zr_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Zr_idd_graff2000_2000_None,,Ev+0.32,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,1.3e-17,,,,,,,,,,,,,,,,,,
914,"['Au', 'Fe']",graff2000,graff,2000,"['s', 'i']",d,Au_sFe_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sFe_id_graff2000_2000_None,Ev+0.43,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,2.6e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
439,['Sc'],graff2000,graff,2000,['i'],dd,Sc_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Sc_idd_graff2000_2000_None,Ec-0.5,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,2e-14,,,,,,,,,,,,,,,,,,,,,,,,,
490,"['H', 'Ti']",graff2000_1,graff,2000,"['', '']",,H_Ti_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",H_Ti__graff2000_1_2000_None,Ec-0.31,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,7e-16,,,,,,,,,,,,,,,,,,,,,,,,,
94,['Zr'],graff2000,graff,2000,['i'],d,Zr_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Zr_id_graff2000_2000_None,Ec-0.42,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,
793,"['B', 'Zn']",graff2000,graff,2000,"['s', 'i']",,B_sZn_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",B_sZn_i_graff2000_2000_None,Ev+0.09,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
757,"['B', 'Fe']",graff2000,graff,2000,"['s', 'i']",a,B_sFe_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",B_sFe_ia_graff2000_2000_None,Ec-0.27,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1.6e-15,,,,,,,,,,,,,,,,,,,,,,,,,
843,['Co'],graff2000,graff,2000,['s'],d,Co_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_sd_graff2000_2000_None,Ev+0.41,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,5e-18,,,,,,,,,,,,,,,,,,,,,,,,,,
719,"['Cr', 'Zn']",graff2000,graff,2000,"['i', 's']",a,Cr_iZn_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Cr_iZn_sa_graff2000_2000_None,Ec-0.1,,,,Taken from table 5.4. DLTS done at a temperature of 240K,,,,,,2.8e-15,,,,,,,,,,,,,,,,,,,,,,,,,
973,['Hf'],graff2000,graff,2000,['i'],d,Hf_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Hf_id_graff2000_2000_None,Ec-0.4,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,2e-14,,,,,,,,,,,,,,,,,,,,,,,,,
270,"['Cu', 'Cu']",graff2000,graff,2000,"['s', 'i']",d,Cu_iCu_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Cu_iCu_sd_graff2000_2000_None,Ev+0.09,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,3.5e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
166,"['Al', 'Cr']",graff2000,graff,2000,"['s', 'i']",d,Al_sCr_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Al_sCr_id_graff2000_2000_None,Ev+0.45,,,,Taken from table 5.4. DLTS done at a temperature of 240K,,,,,1.5e-16,,0.05,,,,,,,,,,,,,,,,,,,,,,,,
972,['Hf'],graff2000,graff,2000,['i'],a,Hf_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Hf_ia_graff2000_2000_None,Ec-0.1,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,2e-14,,,,,,,,,,,,,,,,,,,,,,,,,
176,"['Ga', 'Mn']",graff2000,graff,2000,"['s', 'i']",d,Ga_sMn_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ga_sMn_id_graff2000_2000_None,Ec-0.42,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
442,['Sc'],graff2000,graff,2000,['i'],ddd,Sc_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Sc_iddd_graff2000_2000_None,Ev+0.2,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,1.1e-19,,,,,,,,,,,,,,,,,,,,,,,,,,
958,['Zn'],graff2000,graff,2000,['s'],a,Zn_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Zn_sa_graff2000_2000_None,Ev+0.32,,,,Taken from Table 5.7. Measured at a temperature of 167 K.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
275,"['Au', 'Cu']",graff2000,graff,2000,"['s', 'i']",,Au_sCu_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sCu_i_graff2000_2000_None,Ev+0.43/32,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
274,['Cu'],graff2000,graff,2000,['s'],d,Cu_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Cu_sd_graff2000_2000_None,Ev+0.22,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,3e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
118,"['Al', 'Mn']",graff2000,graff,2000,"['s', 'i']",d,Al_sMn_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Al_sMn_id_graff2000_2000_None,Ec-0.45,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,5e-15,,,,,,,,,,,,,,,,,,,,,,,,,
262,['Cd'],graff2000,graff,2000,['s'],aa,Cd_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Cd_saa_graff2000_2000_None,Ec-0.45,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
749,"['B', 'Fe']",graff2000,graff,2000,"['s', 'i']",d,B_sFe_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",B_sFe_id_graff2000_2000_None,Ev+0.1,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,6.4e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
731,"['Au', 'Cr']",graff2000,graff,2000,"['s', 'i']",d,Au_sCr_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sCr_id_graff2000_2000_None,Ev+0.35,,,,Taken from table 5.4. DLTS done at a temperature of 170K,,,,,8.7e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
844,['Co'],graff2000_1,graff,2000,['s'],d,Co_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_sd_graff2000_1_2000_None,,Ev+0.23,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,1.8e-14,,,,,,,,,,,,,,,,,,
977,['Hf'],graff2000,graff,2000,['i'],dd,Hf_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Hf_idd_graff2000_2000_None,,Ev+0.32,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,5e-18,,,,,,,,,,,,,,,,,,
464,"['Fe', 'In']",graff2000,graff,2000,"['i', 's']",d,Fe_iIn_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Fe_iIn_sd_graff2000_2000_None,Ev+0.15,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
496,['Ti'],graff2000,graff,2000,['i'],dd,Ti_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ti_idd_graff2000_2000_None,,Ev+0.28,0.01,,Taken from table 5.2. DLTS done at a temperature of 200K. This value is different from others as it is an activation energy rather than the energy level.,,,,,,,,,,,,,1.5e-16*exp(-0.036/kT),,,,,,,,,,,,,,,,,,
238,['Ir'],graff2000,graff,2000,['s'],a,Ir_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ir_sa_graff2000_2000_None,Ec-0.24,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,9.1e-15,,,,,,,,,,,,,,,,,,,,,,,,,
70,['V'],graff2000,graff,2000,['i'],d,V_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",V_id_graff2000_2000_None,Ec-0.45,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,2e-15,,,,,,,,,,,,,,,,,,,,,,,,,
174,"['Cr', 'Ga']",graff2000,graff,2000,"['i', 's']",d,Cr_iGa_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Cr_iGa_sd_graff2000_2000_None,Ev+0.48,,,,Taken from table 5.4. DLTS done at a temperature of 240K,,,,,1.5e-15,,0.01,,,,,,,,,,,,,,,,,,,,,,,,
71,"['H', 'V']",graff2000,graff,2000,"['', '']",,H_V_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",H_V__graff2000_2000_None,Ec-0.5,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1.6e-13,,,,,,,,,,,,,,,,,,,,,,,,,
981,['Ta'],graff2000,graff,2000,['i'],a,Ta_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ta_ia_graff2000_2000_None,,Ec-0.22,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,2.2e-17,,,,,,,,,,,,,,,,
49,['V'],graff2000,graff,2000,['i'],a,V_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",V_ia_graff2000_2000_None,Ec-0.18,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1.6e-16,,,,,,,,,,,,,,,,,,,,,,,,,
513,['Pt'],graff2000,graff,2000,['s'],a,Pt_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Pt_sa_graff2000_2000_None,Ec-0.23,,,,Taken from table 4.10. DLTS done at a temperature of 110K,,,,,2.6e-14,2.9e-14,0.01,,,,,,,,,,,,,,,,,,,,,,,,
489,"['H', 'Ti']",graff2000,graff,2000,"['', '']",,H_Ti_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",H_Ti__graff2000_2000_None,Ec-0.55,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1.4e-13,,,,,,,,,,,,,,,,,,,,,,,,,
707,"['B', 'Cr']",graff2000,graff,2000,"['s', 'i']",d,B_sCr_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",B_sCr_id_graff2000_2000_None,Ev+0.28,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,2e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
52,"['Au', 'V']",graff2000,graff,2000,"['s', 'i']",a,Au_sV_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sV_ia_graff2000_2000_None,Ec-0.2,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
988,['Ta'],graff2000,graff,2000,['i'],d,Ta_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ta_id_graff2000_2000_None,Ec-0.58,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,4e-15,,,,,,,,,,,,,,,,,,,,,,,,,
421,['Mo'],graff2000,graff,2000,['i'],d,Mo_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Mo_id_graff2000_2000_None,,Ev+0.28,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,6e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
263,['Cu'],graff2000,graff,2000,['p'],a,Cu_p,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Cu_pa_graff2000_2000_None,Ev+0.21,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
282,['Cu'],graff2000,graff,2000,['s'],a,Cu_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Cu_sa_graff2000_2000_None,Ev+0.46,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,1.5e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
127,"['Al', 'Fe']",graff2000_1,graff,2000,"['s', 'i']",d,Al_sFe_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Al_sFe_id_graff2000_1_2000_None,Ev+0.2,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,1.1e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
65,"['Au', 'V']",graff2000,graff,2000,"['s', 'i']",d,Au_sV_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sV_id_graff2000_2000_None,Ev+0.42,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
699,['Cr'],graff2000,graff,2000,['i'],d,Cr_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Cr_id_graff2000_2000_None,Ec-0.22,,,,Taken from table 5.4. DLTS done at a temperature of 110K,,,,,,7.3e-15,0.01,,,,,,,,,,,,,,,,,,,,,,,,
73,"['V', 'Zn']",graff2000,graff,2000,"['i', 's']",d,V_iZn_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",V_iZn_sd_graff2000_2000_None,Ev+0.29,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,1e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
126,"['Al', 'Fe']",graff2000,graff,2000,"['s', 'i']",d,Al_sFe_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Al_sFe_id_graff2000_2000_None,Ev+0.13,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
870,"['Au', 'Ni']",graff2000,graff,2000,"['s', 'i']",,Au_sNi_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sNi_i_graff2000_2000_None,Ev+0.35/0.42,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
893,['Au'],graff2000,graff,2000,['s'],a,Au_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sa_graff2000_2000_None,,Ec-0.55,0.01,,Taken from table 4.12. DLTS done at a temperature of 300K,,,,,,,,,,,,,7.6e-15,,1.4e-16,,,,,,,,,,,,,,,,
980,['Ta'],graff2000,graff,2000,['i'],dd,Ta_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ta_idd_graff2000_2000_None,,Ev+0.19,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,6e-17,,,,,,,,,,,,,,,,,,
850,['Co'],graff2000,graff,2000,['s'],a,Co_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_sa_graff2000_2000_None,Ec-0.41,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,2.2e-15,,,,,,,,,,,,,,,,,,,,,,,,,
505,['Ti'],graff2000,graff,2000,['i'],a,Ti_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ti_ia_graff2000_2000_None,Ec-0.08,,,,Taken from table 5.2. DLTS done at a temperature of 50K.,,,,,,3.5e-14,0.01,,,,,,,,,,,,,,,,,,,,,,,,
436,['Sc'],graff2000,graff,2000,['i'],d,Sc_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Sc_id_graff2000_2000_None,Ec-0.21,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,3e-14,,,,,,,,,,,,,,,,,,,,,,,,,
91,['Zr'],graff2000,graff,2000,['i'],a,Zr_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Zr_ia_graff2000_2000_None,Ec-0.13,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,
940,"['Fe', 'Zn']",graff2000,graff,2000,"['i', 's']",a,Fe_iZn_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Fe_iZn_sa_graff2000_2000_None,Ec-0.47,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1e-16,,,,,,,,,,,,,,,,,,,,,,,,,
259,['Cd'],graff2000,graff,2000,['s'],a,Cd_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Cd_sa_graff2000_2000_None,Ev+0.5,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
971,['Zn'],graff2000,graff,2000,['s'],aa,Zn_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Zn_saa_graff2000_2000_None,Ec-0.53,,,,Taken from Table 5.7. Measured at a temperature of 300 K.,,,,,2.5e-15,,0.02,,,,,,,,,,,,,,,,,,,,,,,,
625,['Os'],graff2000,graff,2000,['i'],d,Os_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Os_id_graff2000_2000_None,Ev+0.3,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,8e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
1191,['Pd'],graff2000,graff,2000,['s'],dd,Pd_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Pd_sdd_graff2000_2000_None,,Ev+0.12,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,6.5e-17,,,,,,,,,,,,,,,,,,
1190,['Pd'],graff2000,graff,2000,['s'],d,Pd_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Pd_sd_graff2000_2000_None,,Ev+0.3,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,5.6e-16,,,,,,,,,,,,,,,,,,
573,"['Co', 'H']",graff2000,graff,2000,"['', '']",,Co_H_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_H__graff2000_2000_None,Ev+0.22,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,1e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
574,"['Co', 'H']",graff2000_1,graff,2000,"['', '']",,Co_H_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_H__graff2000_1_2000_None,Ev+0.17,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
582,"['Co', 'Hx']",graff2000_1,graff,2000,"['', '']",,Co_Hx_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_Hx__graff2000_1_2000_None,Ec-0.39,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1e-13,,,,,,,,,,,,,,,,,,,,,,,,,
590,"['Au', 'H']",graff2000,graff,2000,"['s', 'i']",a,Au_sH_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sH_ia_graff2000_2000_None,Ec-0.56,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1e-16,,,,,,,,,,,,,,,,,,,,,,,,,
593,"['Co', 'Hx']",graff2000,graff,2000,"['', '']",a,Co_Hx_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_Hx_a_graff2000_2000_None,Ec-0.22,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1e-15,,,,,,,,,,,,,,,,,,,,,,,,,
534,"['Hx', 'Pt']",graff2000,graff,2000,"['', '']",a,Hx_Pt_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Hx_Pt_a_graff2000_2000_None,Ev+0.31,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,8e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
480,['Ti'],graff2000,graff,2000,['i'],d,Ti_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ti_id_graff2000_2000_None,,Ec-0.27,0.01,,Taken from table 5.2. DLTS done at a temperature of 160K.,,,,,,,,,,,,,,,1.30E-14 * exp(-0.004/k/T),,,,,,,,,,,,,,,,
681,"['Mn', 'Zn']",graff2000,graff,2000,"['i', 's']",d,Mn_iZn_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Mn_iZn_sd_graff2000_2000_None,Ev+0.18,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
526,"['H', 'H2', 'Pt']",graff2000,graff,2000,"['', '', '']",,H2_H_Pt_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",H2_H_Pt__graff2000_2000_None,Ev+0.4,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,1e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
393,['Ag'],graff2000,graff,2000,['s'],d,Ag_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ag_sd_graff2000_2000_None,,Ev+0.38,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,7e-16,,,,,,,,,,,,,,,,,,
1197,['Ni'],graff2000,graff,2000,['s'],a,Ni_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ni_sa_graff2000_2000_None,Ec-0.41,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1.2e-16,,,,,,,,,,,,,,,,,,,,,,,,,
655,"['B', 'Mn']",graff2000,graff,2000,"['s', 'i']",d,B_sMn_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",B_sMn_id_graff2000_2000_None,Ec-0.55,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,9e-14,,,,,,,,,,,,,,,,,,,,,,,,,
521,"['H', 'Pt']",graff2000,graff,2000,"['', '']",d,H_Pt_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",H_Pt_d_graff2000_2000_None,Ec-0.5,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,3e-15,,,,,,,,,,,,,,,,,,,,,,,,,
665,['Mn'],graff2000,graff,2000,['i'],d,Mn_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Mn_id_graff2000_2000_None,Ec-0.43,,,,Taken from table 5.5. Peak in DLTS at 200K,,,,,,,0.02,,,,,,,,3.1e-15,,,,,,,,,,,,,,,,
515,['Pt'],graff2000,graff,2000,['s'],dd,Pt_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Pt_sdd_graff2000_2000_None,,Ev+0.08,0.01,,Taken from table 4.10. DLTS done at a temperature of 50K,,,,,,,,,,,,,3.5e-17,,,,,,,,,,,,,,,,,,
651,['Mn'],graff2000,graff,2000,['s'],d,Mn_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Mn_sd_graff2000_2000_None,Ev+0.34,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,2e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
294,['Cu'],graff2000,graff,2000,['s'],aa,Cu_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Cu_saa_graff2000_2000_None,Ec-0.16,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1.91e-17,,,,,,,,,,,,,,,,,,,,,,,,,
525,"['Pt', 'Pt']",graff2000,graff,2000,"['i', 's']",,Pt_iPt_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Pt_iPt_s_graff2000_2000_None,Ev+0.43,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
44,['V'],graff2000,graff,2000,['i'],dd,V_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",V_idd_graff2000_2000_None,,Ev+0.32,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,3.8E-15 * exp(-0.13/kT),,,,,,,,,,,,,,,,,,
395,['Ag'],graff2000,graff,2000,['s'],a,Ag_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ag_sa_graff2000_2000_None,,Ec-0.55,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,7.2e-17,,,,,,,,,,,,,,,,
649,['Mn'],graff2000,graff,2000,['i'],a,Mn_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Mn_ia_graff2000_2000_None,Ec-0.12,,,,Taken from table 5.5. DLTS peak at 70K,,,,,,3.1e-15,,,,,,,,,,,,,,,,,,,,,,,,,
686,"['Au', 'Mn']",graff2000,graff,2000,"['s', 'i']",a,Au_sMn_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sMn_ia_graff2000_2000_None,Ec-0.24,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
661,['Mn4'],graff2000,graff,2000,['p'],d,Mn4_p,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Mn4_pd_graff2000_2000_None,Ec-0.28,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
182,"['Fe', 'Ga']",graff2000_1,graff,2000,"['i', 's']",d,Fe_iGa_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Fe_iGa_sd_graff2000_1_2000_None,Ev+0.25,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,4e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
181,"['Fe', 'Ga']",graff2000,graff,2000,"['i', 's']",d,Fe_iGa_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Fe_iGa_sd_graff2000_2000_None,Ev+0.14,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1198,['Ni'],graff2000_1,graff,2000,['s'],a,Ni_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ni_sa_graff2000_1_2000_None,Ec-0.39,,,,Taken from table 4.6.,,,,,,5.6e-17,0.02,,,,,,,,,,,,,,,,,,,,,,,,
581,"['Co', 'Hx']",graff2000,graff,2000,"['', '']",,Co_Hx_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_Hx__graff2000_2000_None,Ec-0.4,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,
1206,['Ni'],graff2000,graff,2000,['s'],d,Ni_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ni_sd_graff2000_2000_None,Ev+0.17,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,5.4e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
378,"['Ag', 'Hx']",graff2000,graff,2000,"['s', 'i']",,Ag_sHx_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ag_sHx_i_graff2000_2000_None,Ec-0.09,,,,Taken from table 1 in the appendix.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
596,"['Co', 'Hx']",graff2000_3,graff,2000,"['', '']",a,Co_Hx_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_Hx_a_graff2000_3_2000_None,Ec-0.17,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,
379,"['Ag', 'Hx']",graff2000_1,graff,2000,"['s', 'i']",,Ag_sHx_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ag_sHx_i_graff2000_1_2000_None,Ec-0.45,,,,Taken from table 1 in the appendix.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
380,"['Ag', 'Hx']",graff2000_2,graff,2000,"['s', 'i']",,Ag_sHx_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ag_sHx_i_graff2000_2_2000_None,Ev+0.28,,,,Taken from table 1 in the appendix.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
601,"['Co', 'H2']",graff2000,graff,2000,"['', '']",,Co_H2_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_H2__graff2000_2000_None,Ev+0.09,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,1e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
541,['Ru'],graff2000,graff,2000,['i'],a,Ru_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ru_ia_graff2000_2000_None,,Ec-0.14,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,1.1e-16,,,,,,,,,,,,,,,,
622,['Os'],graff2000,graff,2000,['i'],a,Os_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Os_ia_graff2000_2000_None,,Ec-0.22,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,4.6e-17,,,,,,,,,,,,,,,,
1203,['Ni'],graff2000,graff,2000,['s'],aa,Ni_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ni_saa_graff2000_2000_None,Ec-0.07,,,,Taken from table 4.6. DLTS done at a temperature of 45K,,,,,,5.4e-18,0.01,,,,,,,,,,,,,,,,,,,,,,,,
688,"['Au', 'Mn']",graff2000,graff,2000,"['s', 'i']",d,Au_sMn_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Au_sMn_id_graff2000_2000_None,Ev+0.57,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1146,['Nb'],graff2000,graff,2000,['i'],d,Nb_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Nb_id_graff2000_2000_None,Ec-0.62,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,5e-16,,,,,,,,,,,,,,,,,,,,,,,,,
1145,['Nb'],graff2000,graff,2000,['i'],a,Nb_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Nb_ia_graff2000_2000_None,,Ec-0.28,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,7.5e-18,,,,,,,,,,,,,,,,,,,,,,,,,
627,['Mn'],graff2000,graff,2000,['s'],a,Mn_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Mn_sa_graff2000_2000_None,Ec-0.43,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,9e-17,,,,,,,,,,,,,,,,,,,,,,,,,
381,"['Ag', 'Hx']",graff2000_3,graff,2000,"['s', 'i']",,Ag_sHx_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ag_sHx_i_graff2000_3_2000_None,Ev+0.38,,,,Taken from table 1 in the appendix.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
538,['Ru'],graff2000,graff,2000,['i'],d,Ru_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ru_id_graff2000_2000_None,,Ev+0.26,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,9.2e-16,,,,,,,,,,,,,,,,,,
1149,['Nb'],graff2000,graff,2000,['i'],dd,Nb_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Nb_idd_graff2000_2000_None,,Ev+0.18,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,3.8e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
382,"['Ag', 'Ag']",graff2000,graff,2000,"['i', 's']",,Ag_iAg_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ag_iAg_s_graff2000_2000_None,Ec-0.28,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1100,"['Fe', 'Pd']",graff2000,graff,2000,"['i', 's']",,Fe_iPd_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Fe_iPd_s_graff2000_2000_None,Ec-0.32,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1207,['Ni'],graff2000_1,graff,2000,['s'],d,Ni_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Ni_sd_graff2000_1_2000_None,Ev+0.17,,,,Taken from table 4.6.,,,,,1.1e-15,,0.02,,,,,,,,,,,,,,,,,,,,,,,,
203,['Rh'],graff2000,graff,2000,['s'],d,Rh_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Rh_sd_graff2000_2000_None,Ec-0.58,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,2e-14,,,,,,,,,,,,,,,,,,,,,,,,,
1243,['Re'],graff2000,graff,2000,['i'],a,Re_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Re_ia_graff2000_2000_None,Ec-0.07,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,8.7e-16,,,,,,,,,,,,,,,,,,,,,,,,,
197,['Rh'],graff2000,graff,2000,['s'],a,Rh_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Rh_sa_graff2000_2000_None,Ec-0.32,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,5.6e-15,,,,,,,,,,,,,,,,,,,,,,,,,
1245,['Re'],graff2000,graff,2000,['i'],d,Re_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Re_id_graff2000_2000_None,,Ec-0.35,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,,,5.1e-16,,,,,,,,,,,,,,,,
522,"['H', 'Pt']",graff2000_1,graff,2000,"['', '']",d,H_Pt_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",H_Pt_d_graff2000_1_2000_None,Ec-0.18,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,9e-16,,,,,,,,,,,,,,,,,,,,,,,,,
594,"['Co', 'Hx']",graff2000_1,graff,2000,"['', '']",a,Co_Hx_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_Hx_a_graff2000_1_2000_None,Ec-0.26,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,1e-15,,,,,,,,,,,,,,,,,,,,,,,,,
533,['Pt'],graff2000,graff,2000,['s'],d,Pt_s,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Pt_sd_graff2000_2000_None,,Ev+0.32,0.01,,Taken from table 4.10. DLTS done at a temperature of 160K. Temperature dependence of sigma_h does not provide value in table.,,,,,,,,,,,,,1.3e-15*exp(-0.007/kT),,1e-16,,,,,,,,,,,,,,,,
595,"['Co', 'Hx']",graff2000_2,graff,2000,"['', '']",a,Co_Hx_,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Co_Hx_a_graff2000_2_2000_None,Ec-0.07,,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,5e-14,,,,,,,,,,,,,,,,,,,,,,,,,
1162,['W'],graff2000,graff,2000,['i'],d,W_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",W_id_graff2000_2000_None,,Ev+0.4,,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,5e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
1088,['Fe'],graff2000,graff,2000,['i'],d,Fe_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Fe_id_graff2000_2000_None,,Ev+0.39,0.01,,"Taken from table 1 in the appendix. The table only provides the majority carrier capture cross section. The majority carrier has been estimated from the position of the defect level. e.g. if higher than the intrinsic level, it is assume the majority carrier was electrons.",,,,,,,,,,,,,2.80E-16 * exp(-0.043/kT),,1e-10 * T**(-1.5),,,,,,,,,,,,,,,,
631,['Mn'],graff2000,graff,2000,['i'],dd,Mn_i,None,Metal Impurities in Silicon-Device Fabrication,10.1007/978-3-642-57121-3,"review, DLTS",Mn_idd_graff2000_2000_None,,Ev+0.27,,,"Taken from table 5.5, Peak in DLTS at 200K",,,,,,,,,,,,,7.9E-18 * exp(-0.064/kT),,,,,,,,,,,,,,,,,,
588,['H'],herring2001,herring,2001,['i'],d,H_i,None,Energy levels of isolated interstitial hydrogen in silicon,10.1103/PhysRevB.64.125209,DLTS,H_id_herring2001_2001_None,Ec-0.16,,,,Used data from holm1991 and Johnson.,,,,,,,,,,,,,,,,,,,,,,,HO_i-i_d.srh,,,,,,,,
566,['H'],herring2001,herring,2001,['i'],a,H_i,None,Energy levels of isolated interstitial hydrogen in silicon,10.1103/PhysRevB.64.125209,DLTS,H_ia_herring2001_2001_None,Ec-0.84,Ec-0.064,,,"Believed to be HO, rather than just H, see nielsen2002. This value is determined to be 0.45 eV from the donor level.",,,,,,,,,,,,,,,,,,,,,,,HO_i-i_a.srh,,,,,,,,
758,"['B', 'Fe']",macdonald2001,macdonald,2001,"['s', 'i']",a,B_sFe_i,Ec-0.23,Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements,10.1063/1.1372156,LS-ID,B_sFe_ia_macdonald2001_2001_Ec-0.23,,,,,Lifetime analysis on FeB at a fixed temperature,,,,,,,,,,,,,2e-15,,3e-14,,,,,,,,,,,,,,,,
567,['H'],nielsen2002,nielsen,2002,['i'],a,H_i,None,Acceptor state of monoatomic hydrogen in silicon and the role of oxygen,10.1103/PhysRevB.65.075205,DLTS-L,H_ia_nielsen2002_2002_None,Ec-0.65,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
1,"['H', 'O']",nielsen2002,nielsen,2002,"['i', 'i']",a,H_iO_i,None,Acceptor state of monoatomic hydrogen in silicon and the role of oxygen,10.1103/PhysRevB.65.075205,DLTS-LCr,H_iO_ia_nielsen2002_2002_None,Ec-0.79,Ec-0.68,0.08,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
215,"['C', 'H']",andersen2002,andersen,2002,"['', '']",,C_H_,None,Electrical activity of carbon-hydrogen centers in Si,10.1103/PhysRevB.66.235205,DLTS-L,C_H__andersen2002_2002_None,Ec-0.22,,,,"88-103 K, values taken from DLTS database http://www.laplacedlts.eu/defect/, if sample goes above 200 K converted into a Ec-0.154 level",,,phosphorus,,,2e-14,,,,,,,,,,,,,,,,,,,,,,,,,
230,"['C', 'H']",andersen2002,andersen,2002,"['', '']",a,C_H_,None,Electrical activity of carbon-hydrogen centers in Si,10.1103/PhysRevB.66.235205,DLTS-L,C_H_a_andersen2002_2002_None,Ec-0.16,,,,"88-103 K, values taken from DLTS database http://www.laplacedlts.eu/defect/",,,phosphorus,,,2e-16,,,,,,,,,,,,,,,,,,,,,,,,,
285,['Cu'],macdonald2003,macdonald,2003,['p'],,Cu_p,Ec-0.58,Temperature- and injection-dependent lifetime spectroscopy of copper-related defects in silicon,,LS-TI,Cu_p_macdonald2003_2003_Ec-0.58,,,,4-9901816-0-3,QSSPC,10,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
286,['Cu'],macdonald2003_1,macdonald,2003,['p'],,Cu_p,Ec-0.2,Temperature- and injection-dependent lifetime spectroscopy of copper-related defects in silicon,,LS-TI,Cu_p_macdonald2003_1_2003_Ec-0.2,,,,4-9901816-0-3,,0.015,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
183,"['Fe', 'Ga']",schmidt2005,schmidt,2005,"['i', 's']",d,Fe_iGa_s,Ev+0.2,Recombination activity of iron-gallium and iron-indium pairs in silicon,10.1063/1.1929096,LS-DIN,Fe_iGa_sd_schmidt2005_2005_Ev+0.2,,,,,capture cross section from linear fit to 3 low injection lifetimes for different sample doping,2,Cz,gallium,ion implantation,,,,,"0.3, 3, 10",,,,2e-14,,4e-14,,,0.01,,,,,,,,,,,,,
497,['Ti'],rein2005a,rein,2005,['i'],dd,Ti_i,Ev+0.289,Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications,10.1007/3-540-27922-9,LS-ITD,Ti_idd_rein2005a_2005_Ev+0.289,,,,,Sigma_e taken from literature. A temperature dependence of sigma of T^-1.6.,12.0,,,,,,,,,,,,1.9e-16,,,,,0.005,1,,,,,,,,,,,,
1199,['Ni'],rein2005a,rein,2005,['s'],a,Ni_s,Ec-0.4,Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications,10.1007/3-540-27922-9,LS-ITD,Ni_sa_rein2005a_2005_Ec-0.4,,,,,Temperature dependence of sigma T^-2.4.,0.7,,,,,,,,,,,,,,,,,0.03,0.4,,,,,,,,,,,,
759,"['B', 'Fe']",birkholz2005,birkholz,2005,"['s', 'i']",a,B_sFe_i,Ec-0.26,Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements,10.1063/1.1897489,LS-TID,B_sFe_ia_birkholz2005_2005_Ec-0.26,,,,,Used Fei_a of Istratov,,,,,,,,,,,,,1.1e-15,,1.4e-14,,,,,,,,,,,,,,,,
1208,['Ni'],rein2005a,rein,2005,['s'],d,Ni_s,Ev+0.189,Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications,10.1007/3-540-27922-9,LS-ITD,Ni_sd_rein2005a_2005_Ev+0.189,,,,,Temperature dependence of sigma T^-2.5. sigma_e taken from graff2000_1,3500.0,,,,,,,,,,,,,,,,,0.05,"2610, 9400",,,,,,,,,,,,
760,"['B', 'Fe']",rein2005,rein,2005,"['s', 'i']",a,B_sFe_i,Ec-0.26,Electronic properties of interstitial iron and iron-boron pairs determined  by means of advanced lifetime spectroscopy,10.1063/1.2106017,LS-TID,B_sFe_ia_rein2005_2005_Ec-0.26,,,,,,0.45,,,,,,,,,,,,5.5e-15,,2.5e-15,,,0.03,"0.44,0.55",,,,,,,,,,,,
1156,['W'],diez2005,diez,2005,[''],,W_,Ev+0.34,Analysing defects in silicon by temperature- and injection-dependent lifetime spectroscopy (T-IDLS),,LS-IT,W__diez2005_2005_Ev+0.34,,,,3-936338-20-5,"Activation energy of the capture cross section of 17 meV, e.g. proportional to exp(-0.017/kT)",9.6,CZ,boron,melt,,,,,,,,,,,,,,0.02,,,,,,,,,,,,,
466,"['Fe', 'In']",schmidt2005,schmidt,2005,"['i', 's']",d,Fe_iIn_s,None,Recombination activity of iron-gallium and iron-indium pairs in silicon,10.1063/1.1929096,LS-I,Fe_iIn_sd_schmidt2005_2005_None,,,,,Energy level of Ev+0.15 taken from Kimerling1989,70/3,Cz,indium,ion implantation,,,,,14.5,,,,1.5e-14,,3.4999999999999997e-13,,,,,,,,,,,,,,,,
4,"['B', 'O']",rein2005a,rein,2005,"['', '']",,B_O_,Ec-0.41,Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications,10.1007/3-540-27922-9,LS-ITD,B_O__rein2005a_2005_Ec-0.41,,,,,higher resistivity or n-type doping requires taking the multi-level defect structure into account,9.5,Cz,boron,melt,,,,,,,,,,,,,,,,,,,,,,,,,,,
422,['Mo'],rein2005a,rein,2005,['i'],d,Mo_i,Ev+0.317,Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications,10.1007/3-540-27922-9,LS-ITD,Mo_id_rein2005a_2005_Ev+0.317,,,,,Claims difference in DLTS measurement is as they did not account for the temperature dependence of the capture cross section. Sigma_e taken from literature,13.0,,,,,,,,,,,,6e-16,,7.8e-15,,,0.005,3,,,,,,,,,,,,
1089,['Fe'],rein2005,rein,2005,['i'],d,Fe_i,Ev+0.394,Electronic properties of interstitial iron and iron-boron pairs determined  by means of advanced lifetime spectroscopy,10.1063/1.2106017,LS-TI,Fe_id_rein2005_2005_Ev+0.394,,,,,k determined only at room temperature.,51.0,,,,,,,,,,,,,,9.1e-15 * exp(-0.024/kT),,,0.005,5,,,,,,,,,,,,
761,"['B', 'Fe']",macdonald2006,macdonald,2006,"['s', 'i']",a,B_sFe_i,Ec-0.26,Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon,10.1063/1.2358126,LS-ID,B_sFe_ia_macdonald2006_2006_Ec-0.26,,,,,Lifetime analysis on FeB at a fixed temperature for many doing levels,,,,,,,,,,,,,3e-15,1.5e-15,5e-15,,,,,,,,,,,,,,,1e-15,
619,['N'],murphy2006,murphy,2006,[''],,N_,None,"Nitrogen-Doped Silicon: Mechanical, Transport and Electrical Properties",10.1149/1.2355760,DLTS,N__murphy2006_2006_None,Ec-0.5,,,,Did not see Ec-0.19 as earlier papers.,,FZ,phosphorus,melt,,>5e-14,,,220,,,,,,,,,,,,,,,,,,,,,,
708,"['B', 'Cr']",schmidt2007,schmidt,2007,"['s', 'i']",d,B_sCr_i,None,Recombination activity of interstitial chromium and chromium-boron pairs in silicon,10.1063/1.2822452,"DLTS, LS-TI",B_sCr_id_schmidt2007_2007_None,Ev+0.28,,,,Capture cross sections were found to be independent of temperature,,,,,1e-14,5e-15,,,,,,,,,,,,,,,,,,,,,,,,,
851,['Co'],diez2007,diez,2007,['s'],a,Co_s,Ec-0.38,Cobalt related defect levels in silicon analyzed by temperature- and injection-dependent lifetime spectroscopy,10.1063/1.2433743,LS-TI,Co_sa_diez2007_2007_Ec-0.38,,,,,"sigma_e taken not presented in the paper, but here taken from graff2000",0.16,,,,,,,,,,,,1.3749999999999998e-14,,2.2e-15,,,0.015,"0.1,0.53",,,,,,,,,,,,
700,['Cr'],schmidt2007,schmidt,2007,['i'],d,Cr_i,None,Recombination activity of interstitial chromium and chromium-boron pairs in silicon,10.1063/1.2822452,"DLTS, LS-TI",Cr_id_schmidt2007_2007_None,Ec-0.24,,,,Capture cross sections were found to be independent of temperature,,,,,4E-15,2E-14,,,,,,,,,,,,,,,,,,,,,,,,,
822,['Co'],diez2007,diez,2007,[''],d,Co_,Ev+0.41,Cobalt related defect levels in silicon analyzed by temperature- and injection-dependent lifetime spectroscopy,10.1063/1.2433743,LS-TI,Co_d_diez2007_2007_Ev+0.41,,,,,An investigation of the temperature dependence of the capture cross section for electrons suggests that the underlying recombination process of the defect in the lower band gap half is driven by a two stage cascade capture with an activation energy of E = 52 +- 2 meV.,16.0,,,,,,,,,,,,5e-18,,8e-17,,,0.02,3,,,,,,,,,,,,
14,"['Al', 'O']",rosenits2007,rosenits,2007,"['', '']",,Al_O_,None,Determining the defect parameters of the deep aluminum-related defect center in silicon,10.1063/1.2789378,"DLTS, LS-I",Al_O__rosenits2007_2007_None,Ev+0.44,,,,"Measured DLTS with two system, with each providing different values",861.0,CZ,,melt,3.6e-13,3.10E-10,0.02,1.3e9 * T**2 * exp(-0.472/kT),,,,,,,,,,,,,,,,,,,,,,,
36,"['C', 'O']",makarenko2007,makarenko,2007,"['i', 'i']",,C_iO_i,None,Reactions of interstitial carbon with impurities in silicon particle detectors,10.1063/1.2745328,DLTS,C_iO_i_makarenko2007_2007_None,Ev+0.34,,,,A un-stable state of CO_i-i. This decomposes into the Ev+0.36 level as reported by Asom1987,,,boron,,,,,,,,,,,,,,,,,,,,,,,,,,,,
488,['Ti'],roth2008,roth,2008,[''],,Ti_,Ec-0.47,Analysis of electrically active defects in silicon for solar cells,,LS-TI,Ti__roth2008_2008_Ec-0.47,,,,"3868530363, 9783868530360",Temperature dependance of some sigma is T^-1.22,13.0,FZ,boron,melt,,,,,,,,,,,,,,,6.0,,,,,,,,,,,,
1163,['W'],roth2008,roth,2008,['i'],d,W_i,None,Analysis of electrically active defects in silicon for solar cells,,DLTS,W_id_roth2008_2008_None,Ev+0.38,,,"3868530363, 9783868530360",,,CZ,boron,melt,4.8e-16,,0.02,,,,,,,,,,,,,,,,,,,,,,,,
679,['Mn'],roth2008,roth,2008,[''],,Mn_,Ec-0.45,Analysis of electrically active defects in silicon for solar cells,,LS-T,Mn__roth2008_2008_Ec-0.45,,,,"3868530363, 9783868530360",,9.4,,,,,,,,,,,,,,,,,,5.8,,,,,,,,,,,,
656,"['B', 'Mn']",roth2008,roth,2008,"['s', 'i']",d,B_sMn_i,None,Analysis of electrically active defects in silicon for solar cells,,"DLTS, LS-IT",B_sMn_id_roth2008_2008_None,Ev+0.55,,,"3868530363, 9783868530360",An activation energy was used to fit lifetime data. It is unknown if this will work.,6.0,FZ,boron,ion implantation,3.5e-13,,0.02,,,,,,,,2.1e-12*(T/300)**(-1.6),,,,,,,,,,,,,,,,
506,['Ti'],roth2008,roth,2008,['i'],a,Ti_i,Ec-0.08,Analysis of electrically active defects in silicon for solar cells,,LS-T,Ti_ia_roth2008_2008_Ec-0.08,,,,"3868530363, 9783868530360",Temperature dependance of some sigma is T^-1.7,,FZ,boron,melt,,,,,,,,,,,,,,"0.02,0.05",,,,,,,,,,,,,
1090,['Fe'],macdonald2008,macdonald,2008,['i'],d,Fe_i,None,Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence,10.1063/1.2903895,LS,Fe_id_macdonald2008_2008_None,,,,,Performed at room temperature,,,,,,,,,,,,,,,1.3e-14,,,,,,,,,,,,,,,,
498,['Ti'],paudyal2009a,paudyal,2009,['i'],dd,Ti_i,None,Temperature dependent carrier lifetime studies on Ti-doped multicrystalline silicon,10.1063/1.3139286,,Ti_idd_paudyal2009a_2009_None,,,,,,,,boron,ion implantation,,,,,1,,,,,,9.01e-14*exp(-0.107/kT),,,,,,,,,,,,,,,,
1091,['Fe'],paudyal2009,paudyal,2009,['i'],d,Fe_i,None,Temperature Dependent Electron and Hole Capture Cross Sections of Iron-Contaminated Boron-Doped Silicon,10.1109/PVSC.2009.5411380,LS-IT,Fe_id_paudyal2009_2009_None,,,,,,,,,,,,,,,,,,4.54e-16*exp(-0.05/kT),,3.47e-11*T**(-1.48),,,,,,,,,,,,,,,,
762,"['B', 'Fe']",paudyal2009,paudyal,2009,"['s', 'i']",a,B_sFe_i,None,Temperature Dependent Electron and Hole Capture Cross Sections of Iron-Contaminated Boron-Doped Silicon,10.1109/PVSC.2009.5411380,LS-IT,B_sFe_ia_paudyal2009_2009_None,,,,,,,,,,,,,,,,,,3.32e-11 * exp(-0.262/kT),,5.1e-9 * T**(-2.5),,,,,,,,,,,,,,,,
423,['Mo'],paudyal2010,paudyal,2010,['i'],d,Mo_i,Ev+0.375,Temperature dependent carrier lifetime studies of Mo in crystalline silicon,10.1063/1.3309833,LS-ITD,Mo_id_paudyal2010_2010_Ev+0.375,,,,,Claims difference in DLTS measurement is as they did not account for the temperature dependence of the capture cross section. Sigma_e taken from literature,,,,,,,,,,,,,6.05e-14*T**(-1.07),,4.21e-8*T**(-2.95),,,0.03,,,,,,,,,,,,,
15,"['Al', 'O']",rosenits2011,rosenits,2011,"['', '']",,Al_O_,None,Erratum on “Determining the defect parameters of the deep aluminum-related defect center in silicon”,10.1063/1.3652753,"DLTS, LS-I",Al_O__rosenits2011_2011_None,Ev+0.44,,,,"This is an erratum on rosenits2008, as the capture cross section and defect concentration determined from LS-I were too small. A new fit was performed using two defects, holding the energy level and concentration from DLTS constant. A single defect fit was also attempted but was found not to be of low quality.",100.0,CZ,,melt,3.6e-17,3.6E-15,,,,,,,,,,,,,,,,,,,,,,,,,
832,['Co'],scheffler2012,scheffler,2012,['i'],,Co_i,None,A re-examination of cobalt-related defects in n- and p-type silicon,10.1002/pssa.201200140,DLTS,Co_i_scheffler2012_2012_None,Ec-0.35,,,,This is an activation enthalpy and apparent capture cross section. Anneals out at 675 K,,,,,,1.2e-16,,,,,,,,,,,,,,,,,CoH_-_.srh,,,,,,,,
785,"['B', 'Co']",scheffler2012,scheffler,2012,"['s', 's']",,B_sCo_s,None,A re-examination of cobalt-related defects in n- and p-type silicon,10.1002/pssa.201200140,DLTS,B_sCo_s_scheffler2012_2012_None,Ev+0.46,,,,This is an activation enthalpy and apparent capture cross section. Anneals out at 395 K,,,,,3.7e-15,,,,,,,,,,,,,,,,,,,,,,,,,,
216,"['C', 'H']",scheffler2013,scheffler,2013,"['', '']",,C_H_,None,Isolated substitutional cobalt and Co-related complexes in silicon,10.1063/1.4804321,DLTS-L,C_H__scheffler2013_2013_None,Ec-0.16,,,,Activation energy level and apparent capture cross section,,,phosphorus,melt,,5.599999999999999e-16,,,,,,,,,,,,,,,,,,,,,,,,,
568,"['Co', 'H2']",scheffler2013,scheffler,2013,"['s', 'i']",,Co_sH2_i,None,Isolated substitutional cobalt and Co-related complexes in silicon,10.1063/1.4804321,DLTS-LMo,Co_sH2_i_scheffler2013_2013_None,Ec-0.29,,,,Activation energy level and apparent capture cross section,,,phosphorus,melt,,1.1e-14,,,,,,,,,,,,,,,,,,,,,,,,,
852,['Co'],scheffler2013,scheffler,2013,['s'],a,Co_s,None,Isolated substitutional cobalt and Co-related complexes in silicon,10.1063/1.4804321,DLTS-LMo,Co_sa_scheffler2013_2013_None,Ec-0.39,,,,"Out at 975 K, Activation energy level and apparent capture cross section",,"FZ, CZ","boron, phosphorus",melt,,8.699999999999999e-16,,,,,,,,,,,,,,,,,,,,,,,,,
829,['Co'],scheffler2013,scheffler,2013,[''],a,Co_,None,Isolated substitutional cobalt and Co-related complexes in silicon,10.1063/1.4804321,DLTS-L,Co_a_scheffler2013_2013_None,Ev+0.38,,,,Some defect observed only in p-type Co doped samples. Assumed to be hydrogen related.,,,boron,melt,1.6e-14,,,,,,,,,,,,,,,,,,,,,,,,,,
600,"['Co', 'H']",scheffler2013,scheffler,2013,"['s', 'i']",a,Co_sH_i,None,Isolated substitutional cobalt and Co-related complexes in silicon,10.1063/1.4804321,DLTS-L,Co_sH_ia_scheffler2013_2013_None,Ec-0.35,,,,Activation energy level and apparent capture cross section,,"FZ, CZ",phosphorus,melt,,3.7e-16,,,,,,,,,,,,,,,,,,,,,,,,,
774,"['B', 'Co']",scheffler2013,scheffler,2013,"['', '']",a,B_Co_,None,Isolated substitutional cobalt and Co-related complexes in silicon,10.1063/1.4804321,DLTS-L,B_Co_a_scheffler2013_2013_None,Ev+0.46,,,,"Out at 425, Activation energy level and apparent capture cross section",,,boron,melt,9.6e-16,,,,,,,,,,,,,,,,,,,,,,,,,,
226,"['C', 'H']",scheffler2014,scheffler,2014,"['s', 'i']",,C_sH_i,Ec-0.16,Electrical levels in nickel doped silicon,10.1063/1.4901003,DLTS-LCr,C_sH_i_scheffler2014_2014_Ec-0.16,,,,,,,FZ,"boron, phosphorus","melt, diffusion",,,,,1000,-2 V,,,,1.9999999999999998e-15,3E-15,90,1 ms,,,,,,,,,,0 V,0.021 s,,,
709,"['B', 'Cr']",sun2014,sun,2014,"['s', 'i']",d,B_sCr_i,Ev+0.27,Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon,10.1063/1.4881497,LS-IDN,B_sCr_id_sun2014_2014_Ev+0.27,,,,,,5.8,Cz,"boron, phosphorus",melt,,,,,,,,,,,,,,,"-3.4, 0.6",,,,,,,,,,,,
583,"['H3', 'Ni']",scheffler2014,scheffler,2014,"['', '']",a,H3_Ni_,None,Electrical levels in nickel doped silicon,10.1063/1.4901003,DLTS-L,H3_Ni_a_scheffler2014_2014_None,Ev+0.46,,,,,,FZ,"boron, phosphorus","melt, diffusion",2.0000000000000002e-11,,,,1000,-2 V,,,,,,190.0,1 ms,,,,,,,,,,0 V,0.021 s,2.0000000000000002e-11,,
1204,['Ni'],scheffler2014,scheffler,2014,['s'],aa,Ni_s,None,Electrical levels in nickel doped silicon,10.1063/1.4901003,DLTS-L,Ni_saa_scheffler2014_2014_None,Ec-0.07,,,,Out at 550 K,,FZ,"boron, phosphorus","melt, diffusion",,1.2E-15,,,1000,-2 V,,,,,,45.0,1 ms,,,,7e-16,,,,,,0 V,0.021 s,,,
701,['Cr'],sun2014,sun,2014,['i'],d,Cr_i,Ec-0.24,Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon,10.1063/1.4881497,LS-IDN,Cr_id_sun2014_2014_Ec-0.24,,,,,"Only determined K, but estimated capture cross section from comparison of other papers.",3.2,,,,,,,,,,,,,,2.4e-14,,,,"-0.6, 0",,,,,,,,,,,,
424,['Mo'],cox2014,cox,2014,['i'],d,Mo_i,None,Detection of a Molybdenum Acceptor Level in N-Type Silicon,10.1149/2.0081412jss,DLTS-Cr,Mo_id_cox2014_2014_None,Ev+0.3,,,,Claims that is a substitutionary site. This work explain some values from Hamaguchi1991 and some unpublished work from K. Mishra at SunEdison Semiconductor Ltd. This might also also explain the values of Paudyal2010.,,epi,,,9.3e-16,,0.01,,,,,,,,,,,,,,,,,,,,,,,,
569,"['H', 'Ni']",scheffler2014,scheffler,2014,"['', '']",d,H_Ni_,None,Electrical levels in nickel doped silicon,10.1063/1.4901003,DLTS-L,H_Ni_d_scheffler2014_2014_None,Ev+0.49,,,,,,FZ,"boron, phosphorus","melt, diffusion",1.5e-14,,,,1000,-2 V,,,,,,240.0,1 ms,,,,,,,,,,0 V,0.021 s,1e-14,,
555,"['H', 'Ni']",scheffler2014,scheffler,2014,"['', '']",,H_Ni_,None,Electrical levels in nickel doped silicon,10.1063/1.4901003,DLTS-L,H_Ni__scheffler2014_2014_None,Ev+0.29,,,,"Hydrogen related, as only appeared after a ""clean"" that is known to introduce hyrdrogen. ",,FZ,"boron, phosphorus","melt, diffusion",3.9999999999999995e-15,,,,1000,-2 V,,,,,,150.0,1 ms,,,,,,,,,,0 V,0.021 s,9.999999999999999e-16,,
415,['Mo'],cox2014,cox,2014,['s'],a,Mo_s,0.269-9.62e-5*T,Detection of a Molybdenum Acceptor Level in N-Type Silicon,10.1149/2.0081412jss,DLTS-Cr,Mo_sa_cox2014_2014_0.269-9.62e-5*T,Ec-0.255,Ec-0.269,,,Claims that is a substitutionary site. This work explains some values from Hamaguchi1991 and some unpublished work from K. Mishra at SunEdison Semiconductor Ltd. This might also also explain the values of Paudyal2010. The emission rate is field dependent.,,epi,,,,2.9e-16,0.004,,,,,,,,1.15e-16*exp(-0.014/kT),,,,,,,,,,,,,,,,
563,"['H', 'Ni']",scheffler2014,scheffler,2014,"['', '']",a,H_Ni_,None,Electrical levels in nickel doped silicon,10.1063/1.4901003,DLTS-L,H_Ni_a_scheffler2014_2014_None,Ec-0.17,,,,,,FZ,"boron, phosphorus","melt, diffusion",,2.2E-15,,,1000,-2 V,,,,,,90.0,1 ms,,,,8e-16,,,,,,0 V,0.021 s,,,
557,"['H2', 'Ni']",scheffler2014_1,scheffler,2014,"['', '']",a,H2_Ni_,None,Electrical levels in nickel doped silicon,10.1063/1.4901003,DLTS-L,H2_Ni_a_scheffler2014_1_2014_None,Ev+0.6,,,,,,FZ,"boron, phosphorus","melt, diffusion",2.7e-14,,,,1000,-2 V,,,,,,270.0,3 ms,,,,,,,,,,0 V,0.021 s,3e-15,,
1209,['Ni'],scheffler2014,scheffler,2014,['s'],d,Ni_s,None,Electrical levels in nickel doped silicon,10.1063/1.4901003,DLTS-L,Ni_sd_scheffler2014_2014_None,Ev+0.16,,,,Out at 500 K for 20 min,,FZ,"boron, phosphorus","melt, diffusion",1.1e-14,,,,1000,-2 V,,,,,,80.0,1 ms,,,,,,,,,,0 V,0.021 s,3e-15,,
556,"['H2', 'Ni']",scheffler2014,scheffler,2014,"['', '']",a,H2_Ni_,None,Electrical levels in nickel doped silicon,10.1063/1.4901003,DLTS-L,H2_Ni_a_scheffler2014_2014_None,Ev+0.58,,,,,,FZ,"boron, phosphorus","melt, diffusion",2e-14,,,,1000,-2 V,,,,,,280.0,1 ms,,,,,,,,,,0 V,0.021 s,1e-14,,
1200,['Ni'],scheffler2014,scheffler,2014,['s'],a,Ni_s,None,Electrical levels in nickel doped silicon,10.1063/1.4901003,DLTS-L,Ni_sa_scheffler2014_2014_None,Ec-0.45,,,,Out at 550 K,,FZ,"boron, phosphorus","melt, diffusion",,1.4E-15,,,1000,-2 V,,,,,,230.0,1 ms,,,,1e-16,,,,,,0 V,0.021 s,,,
5,"['B', 'O']",mchedlidze2015,mchedlidze,2015,"['', '']",,B_O_,None,Direct detection of carrier traps in Si solar cells after light-induced degradation,10.1002/pssr.201409474,DLTS,B_O__mchedlidze2015_2015_None,Ec-0.41,,,,,,,,,1e-17,,,,,,,,,,,,,,,,,,,,,,,,,,
6,"['B', 'O']",mchedlidze2015_1,mchedlidze,2015,"['', '']",,B_O_,None,Direct detection of carrier traps in Si solar cells after light-induced degradation,10.1002/pssr.201409474,DLTS,B_O__mchedlidze2015_1_2015_None,Ev+0.37,,,,,,,,,,1e-18,,,,,,,,,,,,,,,,,,,,,,,,,
30,"['B', 'O']",niewelt2016,niewelt,2016,"['', '']",a,B_O_,Ev+0.31,Fast in-situ photoluminescence analysis for a recombination parameterization of the fast BO defect component in silicon,10.1063/1.4961423,LS-MID,B_O_a_niewelt2016_2016_Ev+0.31,,,,,"paper reports capture coefficients alpha=vth*sigma @300K, (vth_e=1.2*vth_h -> factor 1.2 in reported k-value). Multi level defect with Q0=alpha_e_d/alpha_h_a=1.2",1.2/85.7,CZ,"boron, phosphorus",melt,,,,,12 - 0.4,,,,,,,,,0.02,0.0002,,,,,,,,,,,,
31,"['B', 'O']",niewelt2016_1,niewelt,2016,"['', '']",a,B_O_,Ev+0.28,Fast in-situ photoluminescence analysis for a recombination parameterization of the fast BO defect component in silicon,10.1063/1.4961423,"Review (3 Voronkov-Papers),  LS-MID",B_O_a_niewelt2016_1_2016_Ev+0.28,,,,,,1986/02/01,CZ,"boron, phosphorus",melt,,,,,,,,,,,,,,0.03,,,,,,,,,,,,,
288,['Cu'],inglese2016_1,inglese,2016,['p'],,Cu_p,Ec-0.62,Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy,10.1063/1.4963121,LS-TI,Cu_p_inglese2016_1_2016_Ec-0.62,,,,,DPSS Solution 2.  QSSPC,2.15,,,,,,,,,,,,,,,,,0.02,0.4,,,,,,,,,,,,
287,['Cu'],inglese2016,inglese,2016,['p'],,Cu_p,Ec-0.48,Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy,10.1063/1.4963121,LS-TI,Cu_p_inglese2016_2016_Ec-0.48,,,,,DPSS solution 1. QSSPC,2.15,CZ,boron,,,,,,,,,,,,,,,0.02,0.4,,,,,,,,,,,,
33,"['B', 'O']",niewelt2016_1,niewelt,2016,"['', '']",d,B_O_,Ec-0.38,Fast in-situ photoluminescence analysis for a recombination parameterization of the fast BO defect component in silicon,10.1063/1.4961423,"Review (3 Voronkov-Papers), LS-MID",B_O_d_niewelt2016_1_2016_Ec-0.38,,,,,"reports capture coefficients alpha=vth*sigma @300K, (vth_e=1.2*vth_h -> factor 1.2 in reported k-value). Multi level defect with Q0=alpha_e_d/alpha_h_a=5.6",65*1.2,CZ,"boron, phosphorus",melt,,,,,,,,,,,,,,0.02,,,,,,,,,,,,,
289,['Cu'],inglese2016_2,inglese,2016,['p'],,Cu_p,Ec-0.15,Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy,10.1063/1.4963121,LS-TI,Cu_p_inglese2016_2_2016_Ec-0.15,,,,,,0.1,,,,,,,,,,,,,,,,,0.05,,,,,,,,,,,,,
32,"['B', 'O']",niewelt2016,niewelt,2016,"['', '']",d,B_O_,Ec-0.34,Fast in-situ photoluminescence analysis for a recombination parameterization of the fast BO defect component in silicon,10.1063/1.4961423,LS-MID,B_O_d_niewelt2016_2016_Ec-0.34,,,,,"alpha=vth*sigma @300K, (vth_e=1.2*vth_h -> factor 1.2 in reported k-value). Multi level defect with Q0=alpha_e_d/alpha_h_a=1.2",18.1*1.2,CZ,"boron, phosphorus",melt,,,,,12 - 0.4,,,,,,,,,0.02,1.0,,,,,,,,,,,,
184,"['Fe', 'Ga']",naerland2017,naerland,2017,"['i', 's']",d,Fe_iGa_s,Ev+0.09,On the recombination centers of iron-gallium pairs in Ga-doped silicon,10.1063/1.5000358,LS-TI,Fe_iGa_sd_naerland2017_2017_Ev+0.09,,,,,"trigonal, fit to narrow injection range. Capture cross sections obtained assuming energy level is correct. Uses activation energies for interstital iron",217,,gallium,melt,,,,,1,,,,8.755760368663596e-17,,1.9e-14,,,"-0.03, 0.01","-96, 162",,,,,,,,,,,,
1092,['Fe'],naerland2017,naerland,2017,['i'],d,Fe_i,Ev+0.43,On the recombination centers of iron-gallium pairs in Ga-doped silicon,10.1063/1.5000358,LS-TI,Fe_id_naerland2017_2017_Ev+0.43,,,,,,327,,gallium,melt,,,,,1,,,,,,,,,0.03,"-93, 112",,,,,,,,,,,,
1174,['Thermaldonors'],markevich2018,markevich,2018,[''],dd,Thermaldonors_,None,Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques,10.1063/1.5053805,DLTS-CrL,Thermaldonors_dd_markevich2018_2018_None,Ec-0.164,Ec-0.164,,,Bistable thermal donor 0. Not from this paper,,CZ,phosphorus,thermal,,,,,5,,,,,,,,,,,,,,,,,,,,,,
324,"['N', 'Si']",mullins2018_4,mullins,2018,"['', 'v']",,N_Si_v,Ev+0.41,Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states,10.1063/1.5036718,DLTS-MoLCr,N_Si_v_mullins2018_4_2018_Ev+0.41,,,,,"This is in reference to a defect in FZ silicon for thermal treatments between 400-800 degrees. Comments on complex nature of defects and assignment to chemical nature. Indicates this is likley to be related to Nitrogen and Vacancies. This is as in Nitrogen lean samples the defect does not appear in DLTS, and when Nickle is introduced into the samples it takes a substitutionary  (destroying a vacancy) and leads to lower amount of defects detected by DLTS.",,FZ,phosphorus,,,,,,1-5,-5 V,,,7e-13,,8.5e-19,275 K,1 ms,,,,,,,,,,,0.05 s,,,
1175,['Thermaldonors'],markevich2018,markevich,2018,[''],d,Thermaldonors_,None,Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques,10.1063/1.5053805,DLTS-CrL,Thermaldonors_d_markevich2018_2018_None,Ec-1.01,Ec-0.72,,,Bistable thermal donor 0.,,CZ,phosphorus,thermal,,,,,5,,,,,,,,,,,,,,,,,,,,,,
1176,['Thermaldonors'],markevich2018_1,markevich,2018,[''],d,Thermaldonors_,None,Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques,10.1063/1.5053805,DLTS-CrL,Thermaldonors_d_markevich2018_1_2018_None,Ec-0.91,Ec-0.47,,,Bistable thermal donor 1.,,CZ,phosphorus,thermal,,,,,5,,,,,,,,,,,,,,,,,,,,,,
321,"['N', 'Si']",mullins2018_1,mullins,2018,"['', 'v']",,N_Si_v,Ec-0.34,Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states,10.1063/1.5036718,DLTS-LCr,N_Si_v_mullins2018_1_2018_Ec-0.34,,,,,"This is in reference to a defect in FZ silicon for thermal treatments between 400-800 degrees. Comments on complex nature of defects and assignment to chemical nature. Indicates this is likley to be related to Nitrogen and Vacancies. This is as in Nitrogen lean samples the defect does not appear in DLTS, and when Nickle is introduced into the samples it takes a substitutionary  (destroying a vacancy) and leads to lower amount of defects detected by DLTS.",,FZ,phosphorus,,,7e-17,,,1-5,-9 V,,,,,1.7e-17,180 K,1 ms,,,,,,,,,,-4 V,0.02 s,,,
322,"['N', 'Si']",mullins2018_2,mullins,2018,"['', 'v']",,N_Si_v,Ev+0.22,Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states,10.1063/1.5036718,DLTS-MoLCr,N_Si_v_mullins2018_2_2018_Ev+0.22,,,,,"This is in reference to a defect in FZ silicon for thermal treatments between 400-800 degrees. Comments on complex nature of defects and assignment to chemical nature. Indicates this is likley to be related to Nitrogen and Vacancies. This is as in Nitrogen lean samples the defect does not appear in DLTS, and when Nickle is introduced into the samples it takes a substitutionary  (destroying a vacancy) and leads to lower amount of defects detected by DLTS.",,FZ,phosphorus,,,,,,1-5,-5 V,,,1.2e-14,,,100 K,1 ms,,,,,,,,,,,0.05 s,,,
323,"['N', 'Si']",mullins2018_3,mullins,2018,"['', 'v']",,N_Si_v,Ev+0.48,Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states,10.1063/1.5036718,DLTS-MoLCr,N_Si_v_mullins2018_3_2018_Ev+0.48,,,,,"This is in reference to a defect in FZ silicon for thermal treatments between 400-800 degrees. Comments on complex nature of defects and assignment to chemical nature. Indicates this is likley to be related to Nitrogen and Vacancies. This is as in Nitrogen lean samples the defect does not appear in DLTS, and when Nickle is introduced into the samples it takes a substitutionary  (destroying a vacancy) and leads to lower amount of defects detected by DLTS.",,FZ,phosphorus,,,,,,1-5,-5 V,,,3.1e-14,,2.3e-18,200 K,1 ms,,,,,,,,,,,0.05 s,,,
325,"['N', 'Si']",mullins2018_5,mullins,2018,"['', 'v']",,N_Si_v,Ev+0.71,Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states,10.1063/1.5036718,DLTS-MoLCr,N_Si_v_mullins2018_5_2018_Ev+0.71,,,,,"This is in reference to a defect in FZ silicon for thermal treatments between 400-800 degrees. Comments on complex nature of defects and assignment to chemical nature. Indicates this is likley to be related to Nitrogen and Vacancies. This is as in Nitrogen lean samples the defect does not appear in DLTS, and when Nickle is introduced into the samples it takes a substitutionary  (destroying a vacancy) and leads to lower amount of defects detected by DLTS.",,FZ,phosphorus,,,,,,1-5,-5 V,,,1e-15,,,100 K,1 ms,,,,,,,,,,,0.05 s,,,
320,"['N', 'Si']",mullins2018,mullins,2018,"['', 'v']",,N_Si_v,Ec-0.18,Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states,10.1063/1.5036718,DLTS-LCr,N_Si_v_mullins2018_2018_Ec-0.18,,,,,"This is in reference to a defect in FZ silicon for thermal treatments between 400-800 degrees. Comments on complex nature of defects and assignment to chemical nature. Indicates this is likley to be related to Nitrogen and Vacancies. This is as in Nitrogen lean samples the defect does not appear in DLTS, and when Nickle is introduced into the samples it takes a substitutionary  (destroying a vacancy) and leads to lower amount of defects detected by DLTS.",,FZ,phosphorus,,,6e-17,,,1-5,-9 V,,,,,1.2e-17,100 K,1 ms,,,,,,,,,,-4 V,0.02 s,,,
817,['S'],gwozdz2019,gwozdz,2019,['s'],dd,S_s,None,Detection of Sulfur-Related Defects in Sulfur Diffused n- and p-Type Si by DLTS,10.1002/pssa.201900303,DLTS-L,S_sdd_gwozdz2019_2019_None,Ec-0.533,,,,,,,,,,3e-15,0.028,,,,,,,,,,,,,,,,,,,,,,,,
253,['Mg'],yarykin2019,yarykin,2019,['i'],d,Mg_i,None,DLTS Investigation of the Energy Spectrum of Si:Mg Crystals,10.1134/S1063782619060290,DLTS-L,Mg_id_yarykin2019_2019_None,Ec-0.226,Ec-0.252,,,Assume T^-3 correction for the capture cross section. LArge field dependence,,FZ,phosphorus,thermal,1.6e-14,,,,0.5,,,,,,,,,,,,,,,,,,,,,,
814,['S2'],gwozdz2019,gwozdz,2019,['s'],dd,S2_s,None,Detection of Sulfur-Related Defects in Sulfur Diffused n- and p-Type Si by DLTS,10.1002/pssa.201900303,DLTS-L,S2_sdd_gwozdz2019_2019_None,Ec-0.272,,,,,,,,,,1e-15,0.029,,,,,,,,,,,,,,,,,,,,,,,,
185,"['Fe', 'Ga']",post2019,post,2019,"['i', 's']",d,Fe_iGa_s,None,Imaging Interstitial Iron Concentrations in Gallium-Doped Silicon Wafers,10.1002/pssa.201800655,LS-I,Fe_iGa_sd_post2019_2019_None,,,,,"orthorhombic,  found goot fit using the values of  Ciszek2002  for GaFe and Schmit2005 ",,MC,gallium,melt,,,,,1,,,,,,,,,,,,,,,,,,,,,,
809,['S2'],gwozdz2019,gwozdz,2019,['s'],d,S2_s,None,Detection of Sulfur-Related Defects in Sulfur Diffused n- and p-Type Si by DLTS,10.1002/pssa.201900303,DLTS-L,S2_sd_gwozdz2019_2019_None,Ec-0.154,,,,,,,,,,1e-14,0.005,,,,,,,,,,,,,,,,,,,,,,,,
7,"['B', 'O2']",vaqueiro-contreras2019,vaqueiro,2019,"['', '']",d,B_O2_,None,Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells,10.1063/1.5091759,DLTS-CrMoMeL,B_O2_d_vaqueiro-contreras2019_2019_None,Ev+0.97,,,,"This is the precursor one state of the the ""BO"" defect. The chemical assignment was not measured but inferred. Negative U defect. Capture rates measured, but parameterization not provided. Capture rates depended on Doping in an unusual manner, i.e. was higher for light doping.",,Cz,boron,melt,3.9e-14,,0.005,1.99e8 * T**2 * exp(-0.97/kT),3.0,,,,,,,,,,,,,,,,,,,,,,
812,['S'],gwozdz2019,gwozdz,2019,['s'],d,S_s,None,Detection of Sulfur-Related Defects in Sulfur Diffused n- and p-Type Si by DLTS,10.1002/pssa.201900303,DLTS-L,S_sd_gwozdz2019_2019_None,Ec-0.257,,,,,,,,,,9e-18,0.002,,,,,,,,,,,,,,,,,,,,,,,,
256,['Mg'],yarykin2019,yarykin,2019,['i'],dd,Mg_i,None,DLTS Investigation of the Energy Spectrum of Si:Mg Crystals,10.1134/S1063782619060290,DLTS-L,Mg_idd_yarykin2019_2019_None,,Ec-0.112,,,Assume T^-3 correction for the capture cross section. LArge field dependence.,,FZ,phosphorus,thermal,3.9e-14,,,,0.5,,,,,,,,,,,,,,,,,,,,,,